Abstract: The present application provide a compound represented by formula (I), a chiral enantiomer thereof or a pharmaceutically acceptable salt thereof, and a preparation method therefor, an intermediate for preparing the compound represented by formula (I), the chiral enantiomer thereof or the pharmaceutically acceptable salt thereof, and a preparation method therefor, a pharmaceutical composition comprising the compound represented by formula (I), the chiral enantiomer thereof or the pharmaceutically acceptable salt thereof, and pharmaceutical use of the compound represented by formula (I), the chiral enantiomer thereof or the pharmaceutically acceptable salt thereof or the pharmaceutical composition comprising the same. The compounds of the present application exhibit good JAK2 kinase inhibitory activity and high selectivity for JAK2 kinase.

Abstract: Techniques and apparatuses are described that implement random modulation of charge-pump noise phases to reduce structured noise induced by the charge pump. In an example aspect, a correlated double sampling (CDS) circuit is coupled to a pixel array including at least one pixel circuit. The CDS circuit receives an input signal generated by the at least one pixel circuit from the pixel array and samples a reset component of the input signal during a first sampling time to generate a reset component sample. The first sampling time is at a first offset from a reset control signal and prior to a settling time of the at least one pixel circuit. The CDS circuit samples a signal component of the input signal during a second sampling time to generate a signal component sample and determines an output signal based on the reset component sample and the signal component sample.

Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.

Abstract: An imaging device includes a photodiode array. The photodiodes include a first set of photodiodes configured as image sensing photodiodes and a second set of photodiodes configured as phase detection auto focus (PDAF) photodiodes. The PDAF photodiodes are arranged in at least pairs in neighboring columns and are interspersed among the image sensing photodiodes. Transfer transistors are coupled to corresponding photodiodes. The transfer transistors coupled to the image sensing photodiodes included in an active row of are controlled in response to a first transfer control signal or a second transfer control signal that control all of the image sensing photodiodes of the active row. A transfer transistor is coupled to one of a pair of the PDAF photodiodes of the active row. The first transfer transistor is controlled in response to a first PDAF control signal that is independent of the first or second transfer control signals.

Abstract: An imaging device includes a first pixel circuit having a first plurality of photodiodes that includes a phase detection autofocus photodiode with image sensing photodiodes. A first buffer transistor having a first threshold voltage is coupled to the first plurality of photodiodes to generate a first output signal. A second pixel circuit is included having a second plurality of photodiodes that are all image sensing photodiodes. A second buffer transistor having a second threshold voltage is coupled to the second plurality of photodiodes to generate a second output signal. The first threshold voltage is less than the second threshold voltage. A driver is coupled to receive a combination of the first and second output signals to generate a total output signal. An influence of the first output signal dominates the second output signal in the total output signal because the first threshold voltage is less than the second threshold voltage.

Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.

Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.

Abstract: Imaging apparatus (20) includes a photosensitive medium (22) and a bias electrode (32), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits (26) is formed on a semiconductor substrate (30). Each pixel circuit includes a pixel electrode (24) coupled to collect the charge carriers from the photosensitive medium; a readout circuit (75) configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate (48) coupled between the pixel electrode and the readout circuit; and a shutter gate (46) coupled in parallel with the skimming gate between a node (74) in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.

Abstract: An imaging device includes a photodiode array. The photodiodes include a first set of photodiodes configured as image sensing photodiodes and a second set of photodiodes configured as phase detection auto focus (PDAF) photodiodes. The PDAF photodiodes are arranged in at least pairs in neighboring columns and are interspersed among the image sensing photodiodes. Transfer transistors are coupled to corresponding photodiodes. The transfer transistors coupled to the image sensing photodiodes included in an active row of are controlled in response to a first transfer control signal or a second transfer control signal that control all of the image sensing photodiodes of the active row. A transfer transistor is coupled to one of a pair of the PDAF photodiodes of the active row. The first transfer transistor is controlled in response to a first PDAF control signal that is independent of the first or second transfer control signals.

Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.

Abstract: An imaging device includes a first pixel circuit having a first plurality of photodiodes that includes a phase detection autofocus photodiode with image sensing photodiodes. A first buffer transistor having a first threshold voltage is coupled to the first plurality of photodiodes to generate a first output signal. A second pixel circuit is included having a second plurality of photodiodes that are all image sensing photodiodes. A second buffer transistor having a second threshold voltage is coupled to the second plurality of photodiodes to generate a second output signal. The first threshold voltage is less than the second threshold voltage. A driver is coupled to receive a combination of the first and second output signals to generate a total output signal. An influence of the first output signal dominates the second output signal in the total output signal because the first threshold voltage is less than the second threshold voltage.

Abstract: Imaging apparatus (20) includes a photosensitive medium (22) and a bias electrode (32), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits (26) is formed on a semiconductor substrate (30). Each pixel circuit includes a pixel electrode (24) coupled to collect the charge carriers from the photosensitive medium; a readout circuit (75) configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate (48) coupled between the pixel electrode and the readout circuit; and a shutter gate (46) coupled in parallel with the skimming gate between a node (74) in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.

Abstract: Imaging apparatus includes a photosensitive medium and a bias electrode, which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits is formed on a semiconductor substrate. Each pixel circuit includes a pixel electrode coupled to collect the charge carriers from the photosensitive medium; a readout circuit configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate coupled between the pixel electrode and the readout circuit; and a shutter gate coupled in parallel with the skimming gate between a node in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.

Abstract: Imaging apparatus includes a photosensitive medium and a bias electrode, which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits is formed on a semiconductor substrate. Each pixel circuit includes a pixel electrode coupled to collect the charge carriers from the photosensitive medium; a readout circuit configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate coupled between the pixel electrode and the readout circuit; and a shutter gate coupled in parallel with the skimming gate between a node in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a plurality of transfer transistors. Individual transfer transistors in the plurality of transfer transistors are coupled to individual photodiodes in the plurality of photodiodes. A floating diffusion is also coupled to the plurality of transfer transistors to receive image charge from the plurality of photodiodes. The floating diffusion is coupled to receive a preset voltage, and the preset voltage is substantially equal a dark condition steady-state read voltage.

Abstract: A pixel circuit includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed into the photodiode, and a transfer transistor coupled to the photodiode. The circuit also includes a noise correction circuit coupled to receive a transfer control signal and the noise correction circuit is coupled to selectively enable or disable the transfer transistor from receiving the transfer control signal. A storage transistor is coupled to the transfer transistor, and the transfer transistor is coupled to selectively transfer the image charge accumulated in the photodiode to the storage transistor for storage in response to the transfer control signal if the transfer transistor is enabled to receive the transfer control signal.

Abstract: A method of implementing dynamic ground sharing in an image sensor with pipeline architecture starts with a pixel array capturing image data. Pixel array includes pixels to generate pixel data signals, respectively. A readout circuitry acquires the image data from a row in the pixel array. An analog-to-digital conversion (ADC) circuitry included in the readout circuitry samples the image data from the row to obtain sampled input data. When the ADC circuitry is sampling, a ground sharing switch is closed to couple the pixel array and the ADC circuitry to a common ground. When the ADC circuitry is not sampling, the ground sharing switch is open to separate the pixel array and the ADC circuitry from the common ground. The ADC circuitry converts the sampled image data from analog to digital to obtain an ADC output. Other embodiments are described.

Abstract: A method of implementing dynamic ground sharing in an image sensor with pipeline architecture starts with a pixel array capturing image data. Pixel array includes pixels to generate pixel data signals, respectively. A readout circuitry acquires the image data from a row in the pixel array. An analog-to-digital conversion (ADC) circuitry included in the readout circuitry samples the image data from the row to obtain sampled input data. When the ADC circuitry is sampling, a ground sharing switch is closed to couple the pixel array and the ADC circuitry to a common ground. When the ADC circuitry is not sampling, the ground sharing switch is open to separate the pixel array and the ADC circuitry from the common ground. The ADC circuitry converts the sampled image data from analog to digital to obtain an ADC output. Other embodiments are described.

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a plurality of transfer transistors. Individual transfer transistors in the plurality of transfer transistors are coupled to individual photodiodes in the plurality of photodiodes. A floating diffusion is also coupled to the plurality of transfer transistors to receive image charge from the plurality of photodiodes. The floating diffusion is coupled to receive a preset voltage, and the preset voltage is substantially equal a dark condition steady-state read voltage.

Abstract: A pixel circuit includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed into the photodiode, and a transfer transistor coupled to the photodiode. The circuit also includes a noise correction circuit coupled to receive a transfer control signal and the noise correction circuit is coupled to selectively enable or disable the transfer transistor from receiving the transfer control signal. A storage transistor is coupled to the transfer transistor, and the transfer transistor is coupled to selectively transfer the image charge accumulated in the photodiode to the storage transistor for storage in response to the transfer control signal if the transfer transistor is enabled to receive the transfer control signal.