Abstract: The present disclosure provides a phased array LiDAR transmitting chip of mixed materials, a manufacturing method thereof, and a LiDAR device. The phased array LiDAR transmitting chip of mixed materials includes: a first material structure layer and an SOI silicon waveguide structure layer, the first material structure layer is optically connected to the SOI silicon waveguide structure layer through a coupling connection structure; the first material structure layer is configured to couple input light into the chip; the coupling connection structure is configured to split a light wave coupled to the chip, and couple each of split light waves into a corresponding silicon waveguide in the SOI silicon waveguide structure layer; where a non-linear refractive index of the first material in the first material structure layer is lower than a non-linear refractive index of silicon material.

Abstract: A phased array LiDAR transmitting chip of multi-layer materials includes: a first material structure layer and an SOI silicon waveguide structure layer, a rear end of the first material structure layer and a front end of the SOI silicon waveguide structure layer form a coupling connection structure. The first material structure layer includes an input coupler and a beam splitter. The input coupler is optically connected to the beam splitter. The beam splitter is optically connected to the SOI silicon waveguide structure layer through the coupling connection structure. The input coupler couples input light to the chip. The beam splitter split a light wave coupled to the chip. The coupling connection structure couples each split light wave to a silicon waveguide in the SOI silicon waveguide structure layer. A non-linear refractive index of a first material in the first material structure layer is lower than that of a silicon material.

Abstract: The method comprises the following steps: a terminal sending an acquisition request for acquiring data to a server, wherein the acquisition request comprises identification information for identifying the terminal; the server judging whether the terminal is a serviceable terminal according to the identification information; the server sending a request for the terminal to provide a first information when the judgment result is that the terminal is a serviceable terminal; the terminal sending the first information after receiving the request; the server receiving the first information and generating an encryption key for a configuration file based on at least the first information; the server processing the identification information by using a digest algorithm and writing the processing result into the configuration file; the server encrypting the configuration file with the encryption key; and the server sending the encrypted configuration file and the data to the terminal.

Abstract: The method comprises the following steps: a terminal sending an acquisition request for acquiring data to a server, wherein the acquisition request comprises identification information for identifying the terminal; the server judging whether the terminal is a serviceable terminal according to the identification information; the server sending a request for the terminal to provide a first information when the judgment result is that the terminal is a serviceable terminal; the terminal sending the first information after receiving the request; the server receiving the first information and generating an encryption key for a configuration file based on at least the first information; the server processing the identification information by using a digest algorithm and writing the processing result into the configuration file; the server encrypting the configuration file with the encryption key; and the server sending the encrypted configuration file and the data to the terminal.

Abstract: Embodiments of the present disclosure provide a silicon-based optical antenna with a reflective layer and a preparation method therefor. The silicon-based optical antenna comprises: an SOI substrate, the SOI substrate at least comprises a bottom silicon layer, a buried oxide layer, and a top silicon layer, the buried oxide layer is located between the bottom silicon layer and the top silicon layer, the top silicon layer is etched to form a row of waveguides, spacings between the waveguides in the row of the waveguides are in an uneven distribution, each waveguide of the row of the waveguides is etched with gratings, the bottom silicon layer is formed with a groove directly reaching a surface of the buried oxide layer facing the bottom silicon layer, and the surface of the buried oxide layer in the groove is formed with a metal reflective layer.

Abstract: A phased array LiDAR transmitting chip of multi-layer materials includes: a first material structure layer and an SOI silicon waveguide structure layer, a rear end of the first material structure layer and a front end of the SOI silicon waveguide structure layer form a coupling connection structure. The first material structure layer includes an input coupler and a beam splitter. The input coupler is optically connected to the beam splitter. The beam splitter is optically connected to the SOI silicon waveguide structure layer through the coupling connection structure. The input coupler couples input light to the chip. The beam splitter split a light wave coupled to the chip. The coupling connection structure couples each split light wave to a silicon waveguide in the SOI silicon waveguide structure layer. A non-linear refractive index of a first material in the first material structure layer is lower than that of a silicon material.

Abstract: The present disclosure provides a phased array LiDAR transmitting chip of mixed materials, a manufacturing method thereof, and a LiDAR device. The phased array LiDAR transmitting chip of mixed materials includes: a first material structure layer and an SOI silicon waveguide structure layer, the first material structure layer is optically connected to the SOI silicon waveguide structure layer through a coupling connection structure; the first material structure layer is configured to couple input light into the chip; the coupling connection structure is configured to split a light wave coupled to the chip, and couple each of split light waves into a corresponding silicon waveguide in the SOI silicon waveguide structure layer; where a non-linear refractive index of the first material in the first material structure layer is lower than a non-linear refractive index of silicon material.

Abstract: Embodiments of the present disclosure provide a silicon-based optical antenna with a reflective layer and a preparation method therefor. The silicon-based optical antenna comprises: an SOI substrate, the SOI substrate at least comprises a bottom silicon layer, a buried oxide layer, and a top silicon layer, the buried oxide layer is located between the bottom silicon layer and the top silicon layer, the top silicon layer is etched to form a row of waveguides, spacings between the waveguides in the row of the waveguides are in an uneven distribution, each waveguide of the row of the waveguides is etched with gratings, the bottom silicon layer is formed with a groove directly reaching a surface of the buried oxide layer facing the bottom silicon layer, and the surface of the buried oxide layer in the groove is formed with a metal reflective layer.