Patents by Inventor Qingguo Wu
Qingguo Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948064Abstract: Methods, systems, and computer program products are provided for cleaning noisy data from unlabeled datasets using autoencoders. A method includes receiving training data including noisy samples and other samples. An autoencoder network is trained based on the training data to increase a first metric based on the noisy samples and to reduce a second metric based on the other samples. Unlabeled data including unlabeled samples is received. A plurality of third outputs is generated by the autoencoder network based on the plurality of unlabeled samples. For each respective unlabeled sample, a respective third metric is determined based on the respective unlabeled sample and a respective third output, and whether to label the respective unlabeled sample as noisy or clean is determined based on the respective third metric and a threshold. Each respective unlabeled sample determined to be labeled as noisy is cleaned.Type: GrantFiled: September 2, 2022Date of Patent: April 2, 2024Assignee: Visa International Service AssociationInventors: Qingguo Chen, Yiwei Cai, Dan Wang, Peng Wu
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Patent number: 8362571Abstract: Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor strain is generated is PMOS devices using a highly compressive post-salicide amorphous carbon capping layer applied as a blanket over on at least the source and drain regions. The stress from this capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in PMOS channel.Type: GrantFiled: January 28, 2011Date of Patent: January 29, 2013Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, James S. Sims, Mandyam Sriram, Seshasayee Varadarajan, Haiying Fu, Pramod Subramonium, Jon Henri, Sirish Reddy
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Patent number: 7998881Abstract: Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor strain is generated is PMOS devices using a highly compressive post-salicide boron doped carbon capping layer applied as a blanket over on at least the source and drain regions. The stress from this capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in PMOS channel.Type: GrantFiled: June 6, 2008Date of Patent: August 16, 2011Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, James S. Sims, Mandyam Sriram, Seshasayee Varadarajan, Akhil Singhal
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Patent number: 7923385Abstract: Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules with at least one carbon-carbon triple bond, or carbon-carbon double bond, or a combination of these groups and depositing the carbon doped oxide dielectric layer under conditions in which the resulting dielectric layer has a dielectric constant of not greater than about 2.7. Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups.Type: GrantFiled: June 5, 2009Date of Patent: April 12, 2011Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, Haiying Fu
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Patent number: 7906174Abstract: Methods of preparing low-k carbon-doped oxide (CDO) films having high mechanical strength are provided. The methods involve contacting the substrate with a CDO precursor to deposit the film typically using a plasma-enhanced chemical vapor deposition (PECVD) method. After the film is deposited, it is exposed to ultraviolet radiation in a manner that increases cross-linking and/or lowers the dielectric constant of the film. The resulting films have ultra-low dielectric constants, e.g., about 2.5, but also high mechanical strength, e.g., a modulus of at least about 7.5 GPa. In certain embodiments, a single hydrocarbon precursor is used, resulting in an improved process for obtaining ULK films that does not require dual (porogen and backbone) precursors.Type: GrantFiled: December 7, 2006Date of Patent: March 15, 2011Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, Easwar Srinivasan, Dan Vitkavage
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Patent number: 7906817Abstract: Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor strain is generated is PMOS devices using a highly compressive post-salicide amorphous carbon capping layer applied as a blanket over on at least the source and drain regions. The stress from this capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in PMOS channel.Type: GrantFiled: June 6, 2008Date of Patent: March 15, 2011Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, James S. Sims, Mandyam Sriram, Seshasayee Varadarajan, Haiying Fu, Pramod Subramonium, Jon Henri, Sirish Reddy
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Patent number: 7799705Abstract: Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. In other cases, the structure former precursor has carbon-carbon double or triple bonds and one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. Once the precursor film is formed, the porogen is removed, leaving a porous low-k dielectric matrix with high mechanical strength. Different types of structure former precursors and porogen precursors are described. The resulting low stress low-k porous film may be used as a low-k dielectric film in integrated circuit manufacturing applications.Type: GrantFiled: January 5, 2009Date of Patent: September 21, 2010Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, Haiying Fu, David C. Smith, David Mordo
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Patent number: 7781351Abstract: Methods of preparing a carbon doped oxide (CDO) layer of low dielectric constant and low residual stress involving, for instance, providing a substrate to a deposition chamber and exposing it to an organosilicon precursor containing unsaturated C—C bonds or to multiple organic precursors including at least one organosilicon and at least one unsaturated C—C bond are provided. The methods may also involve igniting and maintaining a plasma in a deposition chamber using radio frequency power having high and low frequency components with a high percentage of the low frequency component, and depositing the carbon doped dielectric layer under conditions in which the resulting dielectric layer has a residual stress of not greater than, e.g., about 50 MPa, and a dielectric constant not greater than about 3.Type: GrantFiled: April 7, 2004Date of Patent: August 24, 2010Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, Haiying Fu, Dong Niu, Ananda K. Bandyopadhyay, David Mordo
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Patent number: 7737525Abstract: Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules with at least one carbon-carbon triple bond, or carbon-carbon double bond, or a combination of these groups and depositing the carbon doped oxide dielectric layer under conditions in which the resulting dielectric layer has a dielectric constant of not greater than about 2.7.Type: GrantFiled: November 7, 2007Date of Patent: June 15, 2010Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, Haiying Fu, Xingyuan Tang
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Patent number: 7622400Abstract: Methods of forming a dielectric layer having a low dielectric constant and high mechanical strength are provided. The methods involve depositing a sub-layer of the dielectric material on a substrate, followed by treating the sub-layer with a plasma. The process of depositing and plasma treating the sub-layers is repeated until a desired thickness has been reached.Type: GrantFiled: May 18, 2004Date of Patent: November 24, 2009Assignee: Novellus Systems, Inc.Inventors: Keith Fox, Easwar Srinivasan, David Mordo, Qingguo Wu
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Publication number: 20090239390Abstract: Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules with at least one carbon-carbon triple bond, or carbon-carbon double bond, or a combination of these groups and depositing the carbon doped oxide dielectric layer under conditions in which the resulting dielectric layer has a dielectric constant of not greater than about 2.7. Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups.Type: ApplicationFiled: June 5, 2009Publication date: September 24, 2009Applicant: NOVELLUS SYSTEMS, INC.Inventors: Qingguo Wu, Haiying Fu
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Patent number: 7473653Abstract: Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. In other cases, the structure former precursor has carbon-carbon double or triple bonds and one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. Once the precursor film is formed, the porogen is removed, leaving a porous low-k dielectric matrix with high mechanical strength. Different types of structure former precursors and porogen precursors are described. The resulting low stress low-k porous film may be used as a low-k dielectric film in integrated circuit manufacturing applications.Type: GrantFiled: June 18, 2007Date of Patent: January 6, 2009Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, Haiying Fu, David C. Smith, David Mordo
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Patent number: 7390537Abstract: Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant and low residual stress are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to a chemical precursor having molecules with at least one carbon-carbon triple bond, followed by igniting and maintaining a plasma in a deposition chamber using radio frequency power having high and low frequency components or one frequency component only, and depositing the carbon doped oxide film under conditions in which the resulting dielectric layer has a compressive stress or a tensile stress of not greater than, e.g., about 50 MPa, and dielectric constant of less than 3.Type: GrantFiled: February 27, 2004Date of Patent: June 24, 2008Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, Dong Niu, Haiying Fu
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Patent number: 7341761Abstract: Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules with at least one carbon—carbon triple bond, or carbon—carbon double bond, or a combination of these groups and depositing the carbon doped oxide dielectric layer under conditions in which the resulting dielectric layer has a dielectric constant of not greater than about 2.7.Type: GrantFiled: March 11, 2004Date of Patent: March 11, 2008Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, Haiying Fu, Xingyuan Tang
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Patent number: 7326444Abstract: Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant (<3) and low residual stress without sacrificing important integration properties such as dry etch rate, film stability during wet cleaning, electrical leakage current, and extinction coefficient are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to a chemical precursor having molecules with at least one carbon-carbon triple bond, followed by igniting and maintaining a plasma in a deposition chamber using radio frequency power having high and low frequency components or one frequency component only, and depositing the carbon doped oxide film under conditions in which the resulting dielectric layer has a compressive stress or a tensile stress of between about ?20 to 30 MPa and a dielectric constant of between about 2.5-3.0, a C?C to SiO bond ratio of between about 0.05% to 5%, a SiC to SiO bond ratio of between about 2% to 10%, and a refractive index (RI) of 1.Type: GrantFiled: September 14, 2004Date of Patent: February 5, 2008Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, Dong Niu, Honghong Wang, Haiying Fu
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Patent number: 7241704Abstract: Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. In other cases, the structure former precursor has carbon-carbon double or triple bonds and one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. Once the precursor film is formed, the porogen is removed, leaving a porous low-k dielectric matrix with high mechanical strength. Different types of structure former precursors and porogen precursors are described. The resulting low stress low-k porous film may be used as a low-k dielectric film in integrated circuit manufacturing applications.Type: GrantFiled: August 27, 2004Date of Patent: July 10, 2007Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, Haiying Fu, David C. Smith, David Mordo
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Patent number: 7208389Abstract: Methods of preparing a porous low-k dielectric material on a substrate are provided. The methods involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film, leaving a porous low-k dielectric matrix. Methods using oxidative conditions and non-oxidative conditions are described. The methods described may be used to remove porogen from porogen-containing precursor films. The porogen may be a hydrocarbon such as a terpene (e.g., alpha-terpinene) or a norbornene (e.g., ENB). The resulting porous low-k dielectric matrix can then be annealed to remove water and remaining silanols capped to protect it from degradation by ambient conditions, which methods will also be described.Type: GrantFiled: September 26, 2003Date of Patent: April 24, 2007Assignee: Novellus Systems, Inc.Inventors: Adrianne K. Tipton, Brian G. Lu, Patrick A. Van Cleemput, Michelle T. Schulberg, Qingguo Wu, Haiying Fu, Feng Wang
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Patent number: 7112615Abstract: Methods and systems are disclosed for fabricating ultra-low dielectric constant porous materials. In one aspect of the invention, a method for making porous low-k films is disclosed. The method uses polymer based porogens as sacrificial templates around which a chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD) deposited matrix is formed. Upon pyrolysis, the porogens decompose resulting in a porous ultra-low dielectric material. This method can be used, for example, to produce porous organosilicate glass (OSG) materials, ultra-low dielectric nanoporous materials, porous ceramics, porous scaffolds, and/or porous metals. Various uses and embodiments of the methods and systems of this invention are disclosed.Type: GrantFiled: July 22, 2003Date of Patent: September 26, 2006Assignee: Massachusetts Institute of TechnologyInventors: Karen K. Gleason, Qingguo Wu, April Ross
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Publication number: 20040249006Abstract: Methods and systems are disclosed for fabricating ultra-low dielectric constant porous materials. In one aspect of the invention, a method for making porous low-k films is disclosed. The method uses polymer based porogens as sacrificial templates around which a chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD) deposited matrix is formed. Upon pyrolysis, the porogens decompose resulting in a porous ultra-low dielectric material. This method can be used, for example, to produce porous organosilicate glass (OSG) materials, ultra-low dielectric nanoporous materials, porous ceramics, porous scaffolds, and/or porous metals. Various uses and embodiments of the methods and systems of this invention are disclosed.Type: ApplicationFiled: July 22, 2003Publication date: December 9, 2004Inventors: Karen K. Gleason, Qingguo Wu, April Ross