Abstract: Embodiments disclosed herein are directed to a memory device, comprising a substrate including a word line switch well region; a non-volatile memory array including a plurality of memory strings of non-volatile storage elements arranged into rows and columns over the word line switch well region; a plurality of word lines, each word line is coupled to one or more rows of non-volatile storage elements; and control circuitry in communication with the non-volatile memory array. The control circuitry is configured to apply a negative voltage to the word line switch well region.

Abstract: Disclosed is a design method for a dynamic scale model satisfying hydrodynamic force similarity and bending elastic force similarity in the technical field of civil engineering. The design and fabrication method includes the following steps: step 1, designing a scale model satisfying structural dynamic similarity under pure seismic effects: designing a scale model A with a structural density scale S? of 1 using a bending elastic force-gravity similarity law; step 2, adjusting, based on the scale model A designed in step 1, a width of a water-facing surface and a width of a flow direction surface of the scale model according to a principle that a hydrodynamic force scale is consistent with an inertial force scale and the bending elastic force-gravity similarity law, to obtain a scale model B; step 3, fabricating the scale model B obtained in step 2 using 3D printing technology.

Abstract: The present disclosure relates generally to GLP-1 agonists and pharmaceutical compositions comprising the same, as well as methods for treating a GLP-1 associated disease, disorder, or condition.

Abstract: A class of compounds as a SGLT1/SGLT2/DPP4 triple inhibitor, and an application in preparation of a drug serving as the SGLT1/SGLT2/DPP4 triple inhibitor. Compounds represented by formula (I), and isomers and pharmaceutically-acceptable salts thereof are specifically involved.

Abstract: A memory device includes memory blocks and a word line driver circuit including word line driver transistor pairs. Each of the memory blocks includes word line subblocks. Each of the word line driver transistor pairs includes a respective first word line driver transistor and a respective second word line driver transistor that share a common input node and having different respective first and second output nodes. A first subset of neighboring pairs of output nodes that are laterally spaced by a first portion of the dielectric isolation structure having a first width are electrically connected to word line zones within a same word line subblock, and a second subset of the neighboring pairs of output nodes that are laterally spaced by a second portion of the dielectric isolation structure having a second width greater than the first width are electrically connected to word lines within different word line subblocks.

Abstract: A memory device includes a plurality of memory blocks including respective word lines; and a word line driver circuit including word line driver transistors. In one embodiment, the word line driver transistors are located in laterally offset rows. In another embodiment, at least one of a spacing between laterally adjacent word line driver transistors or a length of their source or drain region differs dependent on whether the transistors are connected to words lines in the same memory block or in different memory blocks.

Abstract: This disclosure describes systems, methods, and devices related to padding control frame. A device may receive a minimum medium access control protocol data unit (MPDU) start spacing field specifying a minimum spacing duration required between transmissions of protected control frames. The device may transmit a protected control frame including padding after a message integrity code (MIC), the padding comprising a number of bytes indicated by a peer station based on binary convolutional coding (BCC) encoding. The device may apply additional padding for a specified padding duration for MIC verification based on the received minimum MPDU start spacing field.

Abstract: This application provides a receiving module, a packaging structure, a printed circuit board, and an electronic device, which can mitigate a problem that application scenarios of a front-end receiving module of an existing GNSS receiver are limited. The receiving module includes a first filtering unit, an amplifying unit, and a control element. When the amplifying unit operates in a first mode, the first end of the amplifying unit acts as a signal input end, and in this way, the first filtering unit acts as a front filtering unit. When the amplifying unit operates in a second mode, the first end of the amplifying unit acts as a signal output end, and in this way, the first filtering unit acts as a rear filtering unit.

Abstract: Methods for forming a metal carbide liner in features formed in a substrate surface are described. Each of the features extends a distance into the substrate from the substrate surface and have a bottom and at least one sidewall. The methods include depositing a metal carbide liner in the feature of the substrate surface with a plurality of high-frequency ratio-frequency (HFRF) pulses. Semiconductor devices with the metal carbide liner and methods for filling gaps using the metal carbide liner are also described.

Abstract: A wireless device configured for communication in a wireless local area network (WLAN) may determine whether a detected physical layer protocol data unit (PPDU) is an enhanced long range (ELR) PPDU or a non-ELR PPDU and may estimate a power level for a data field of the detected PPDU. The device may use the estimated power level for determining a PHY-CCA indication primitive. The estimated power level for an ELR data field may be determined based on predetermined power boost levels of one or more fields in the ELR PPDU. For a spatial reuse transmission, a transmit power level may be determined based on the estimated power level for the ELR data field. A ELR PPDU may comprise a legacy preamble followed by a ELR preamble and an ELR data field. The ELR preamble may comprise an ELR classification field followed by an ELR-STF, an ELR-LTF and an ELR-SIG.

Abstract: A mower includes a frame, a walking assembly, a cutting deck assembly and an operating mechanism. The walking assembly, the cutting deck assembly and the operating mechanism are all installed on the frame, and the operating mechanism is configured to control a walking of the walking assembly. The operating mechanism includes an operating lever mounting base, an operating lever, a limiting assembly and a reset assembly. The operating lever mounting base is rotatably installed on the frame along a first direction. The operating lever is rotatably installed on the operating lever mounting base along a second direction. The reset assembly drives the operating lever to reset to an initial position in the first direction, and the limiting assembly locks the operating lever in the initial position.

Abstract: Techniques are provided for storage tier verification checks. A determination is made that a mount operation of an aggregate of a set of volumes stored within a multi-tier storage environment has completed. A first metafile and a second metafile are maintained to track information related to the storage of objects of a volume of the aggregate within a remote object store that is a tier of the multi-tier storage environment. A distributed verification is performed between the first metafile and the second metafile to identify an inconsistency. Accordingly, the first metafile and the second metafile are reconciled to address the inconsistency so that storage information within the first metafile and the second metafile are consistent.

Abstract: This disclosure describes systems, methods, and devices related to a trigger-based null data packet (NDP) for channel sounding system. A device may send a trigger frame to a group of station devices, the group of station devices including a first station device, the trigger frame indicating a high efficiency (HE) long training field (HE-LTF) mode and a guard interval duration. The device may identify a HE trigger-based (TB) null data packet (NDP) received from the first station device, the HE TB NDP including a first packet extension field, wherein the HE TB NDP is associated with the HE-LTF mode and the guard interval duration indicated in the trigger frame. The device may send a downlink NDP including a second packet extension field, a second HE-LTF mode, and a second guard interval duration. The device may determine channel state information based on HE TB NDP received from the first station device.

Abstract: This disclosure describes mechanisms for performing rate matching in low-density parity check (LPDC) codes in a wireless network. A device may generate an Aggregated Media Access (MAC) Protocol Data Unit (AMPDU) payload having an AMPDU payload size associated with a number of bits. The device may omit pre-Forward Error Correction (FEC) padding of the AMPDU payload at a MAC layer by indicating the AMPDU payload size in a physical layer (PHY)-specific preamble. The device may then generate the PHY-specific preamble comprising the AMPDU payload size without the pre-FEC padding. The device may also calculate a number of Orthogonal Frequency Division Multiplexing (OFDM) symbols for containing the number of bits and transmit the PHY-specific preamble and the number of OFDM symbols to a station device.

Abstract: This disclosure relates to GLP-1 agonists of Formula (I): including pharmaceutically acceptable salts and solvates thereof, and pharmaceutical compositions including the same.

Abstract: Various illustrative aspects are directed to a data storage device including one or more disks, an actuator mechanism configured to position a selected head among one or more heads proximate to a corresponding disk surface among the one or more disks, the selected head comprising a write element and an assistive energy emitter, and one or more processing devices configured to, individually or in combination: apply an assistive energy current to the assistive energy emitter while refraining from applying a write current to the write element, and vary a level of the assistive energy current over time while refraining from applying the write current to the write element.

Abstract: A mower includes a frame, a cutting deck assembly and a walking mechanism. The cutting deck assembly is mounted on the frame. The walking mechanism is mounted on the frame and includes a front wheel assembly and a rear wheel assembly. The frame includes a front frame and a rear frame. The front frame is detachably connected with the rear frame. The front frame is provided with the front wheel assembly, and the rear frame is provided with the rear wheel assembly. When the cutting deck assembly needs to be replaced to meet use requirements, the front frame and the rear frame of appropriate specifications are first selected to be fixed to ensure that the cutting deck assembly has a suitable mounting size, so that the suitable cutting deck assembly may be replaced in different working environments to meet the use requirements of a variety of environments.

Abstract: The present disclosure relates generally to GLP-1 agonists and pharmaceutical compositions comprising the same, as well as methods for treating a GLP-1 associated disease, disorder, or condition.

Abstract: Technology for operating word line switch transistors in a memory system. A memory system provides for separate control of the voltage to the gates of the word line switch transistors and a voltage to a well in which the word line switch transistors reside. This allows for a negative voltage to be applied to the gates and/or the well. However, if desired, a non-negative voltage (e.g., 0V) may be applied to the gates or the well.

Abstract: The invention provides a semiconductor structure and a manufacturing method making the semiconductor structure. The method includes: providing a substrate; forming semiconductor pillars on the substrate; forming gate electrodes on the middle sidewalls of the semiconductor pillars; and performing dopant implantation to form source and drain regions. Since the gate-all-around (GAA) gates surrounding the semiconductor pillars are formed first, and the source region and the drain region are formed later by doping implantation, the precise position of the doping implantation can be ensured, thereby improving the fabrication accuracy of the semiconductor structure and improving the performance of the semiconductor structure.