Abstract: The present disclosure provides a multi-factor quantitative analysis method for deformation of a neighborhood tunnel. The method includes the following steps: analyzing monitoring data generated at a tunnel site; simulating collapse occurring at a shallow buried section of a tunnel; determining the degree of influence of each factor on the tunnel and a stratum; and determining quantitative influence of each factor on tunnel deformation. The present disclosure can not only provide an accurate theoretical basis for the construction of the shallow buried section of the small-distance tunnel, but also guarantee safety and cost saving during tunnel construction.

Abstract: Various example embodiments described herein relate to a sensor assembly. The sensor assembly includes a first sensor cover and a second sensor cover. The first sensor cover is disposed on a first end of the sensor assembly and the second sensor cover is disposed on a second end of the sensor assembly. The first sensor cover defines a first capillary and the second sensor cover defines a second capillary therethrough. The sensor assembly further includes a first sensing unit, a second sensing unit, and a filter. The first sensing unit and the second sensing unit are disposed between the first sensor cover and the second sensor cover. In some example embodiments, the filter is reactive to a target gas and thereby prevents an inflow of the target gas through the second capillary into the sensor assembly.

Abstract: Carrier signal generators are provided. The carrier signal generator includes a master processing module and a plurality of slave processing modules. Each slave processing module is used to control a corresponding one of universal power units of the UPS. The slave processing modules output, according to a synchronously received reference signal, control signals to control the universal power units to receive power from the mains or a rechargeable battery. When the mains is normal, each slave processing module synchronously generates a three-phase rectification control signal to rectify and output power from the mains. When the mains is abnormal, each slave processing module generates a first DC-DC control signal independently of the reference signal output by the master processing module, so as to convert and output power from the rechargeable battery. The carrier signal generator has improved compatibility and improved current conversion quality and is low cost.

Abstract: A process for cleaning a compound semiconductor wafer; the compound semiconductor wafer comprises, taking gallium arsenide (GaAs) as a representative, a group III-V compound semiconductor wafer. The process comprises the following steps: 1) treating the wafer with a mixture of dilute ammonia, hydrogen peroxide and water at a temperature not higher than 20° C.; 2) washing the wafer with deionized water; 3) treating the wafer with an oxidant; 4) washing the wafer with deionized water; 5) treating the wafer with a dilute acid solution or a dilute alkali solution; 6) washing the wafer with deionized water; and 7) drying the resulting wafer. The process can improve the cleanliness, micro-roughness and uniformity of the wafer surface.

Abstract: A process for cleaning a compound semiconductor wafer; the compound semiconductor wafer comprises, taking gallium arsenide (GaAs) as a representative, a group III-V compound semiconductor wafer. The process comprises the following steps: 1) treating the wafer with a mixture of dilute ammonia, hydrogen peroxide and water at a temperature not higher than 20° C.; 2) washing the wafer with deionized water; 3) treating the wafer with an oxidant; 4) washing the wafer with deionized water; 5) treating the wafer with a dilute acid solution or a dilute alkali solution; 6) washing the wafer with deionized water; and 7) drying the resulting wafer. The process can improve the cleanliness, micro-roughness and uniformity of the wafer surface.