Patents by Inventor Qingjun Zhou

Qingjun Zhou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240152672
    Abstract: A method and system for predicting water flooding recovery of fault block reservoirs considering a whole process optimization includes: determining influencing factors in water flooding recovery of fault block reservoirs; screening master parameters of the water flooding recovery of the fault block reservoirs; determining a single-factor correlation between the water flooding recovery of the fault block reservoirs and the master parameters; designing multi-factor orthogonal experimental schemes; performing a whole-process water flooding optimization for each of the experimental schemes including separate-layer injection and production, well-type conversion, and injection and production adjustment, to obtain the maximum water flooding recovery; and determining a prediction model of the water flooding recovery of the fault block reservoirs using least square method based on results of the whole process optimization of orthogonal experiments, further obtaining a prediction model of the water flooding recovery of
    Type: Application
    Filed: December 19, 2022
    Publication date: May 9, 2024
    Inventors: Jian Hou, Kang Zhou, Shuai Liu, Zhibin An, Qingjun Du, Bei Wei, Yongge Liu
  • Publication number: 20240141766
    Abstract: A bidirectional self-regulating chemical flooding method and system for enhancing oil recovery includes: determining the average particle size of dispersed phase droplets under stable seepage flow of an oil-in-water emulsion according to the average reservoir permeability; determining injection concentration of an emulsifier which matches a target reservoir according to reservoir seepage velocity; under a condition of keeping the injection concentration of the emulsifier constant, determining the optimal injection concentration of a polymer which matches the injection concentration of the emulsifier through core flooding experiments with the maximum equivalent ton oil accumulation as a target; determining total injection amount of the emulsifier and total injection amount of the polymer for implementing well group units; and optimizing injection amount of the emulsifier and the polymer in each single well by using a numerical simulator of a chemical flooding reservoir.
    Type: Application
    Filed: November 21, 2022
    Publication date: May 2, 2024
    Inventors: Jian Hou, Kang Zhou, Zhinbin An, Qingjun Du, Yongge Liu, Bei Wei, Dejun Wu, Shuai Liu
  • Publication number: 20240123120
    Abstract: A corneal implant with adhesion-increase treatment is associated with a method for increasing the adhesion of the artificial corneal implant by an epoxy-amine ring-opening reaction of the polyamino high-molecular polymer and glycidyl methacrylate to obtain a methacrylate modified polyamino polymer. The method improves the adhesion and biocompatibility of the artificial corneal endothelial sheet by photo-initiated free radical polymerization reaction, and has a high oxygen permeability and a high adhesion. It can be used for treating patients with corneal endothelial decompensation, playing a barrier role to block aqueous humor, eliminating corneal edema, and reducing the risk of corneal graft detachment after surgery.
    Type: Application
    Filed: July 13, 2022
    Publication date: April 18, 2024
    Inventors: Weiyun SHI, Ting WANG, Qingjun ZHOU, Xiaoyu ZHANG, Hongwei WANG
  • Publication number: 20240124908
    Abstract: A method for preparing (S)-nicotine by reduction includes conducting a reduction process on an alkene compound as shown in Formula I and/or an iminium cation compound as shown in Formula II, thereby producing (S)-nicotine. The method is simple, safe, reliable, and yields both high purity and high quantities of (S)-nicotine production.
    Type: Application
    Filed: November 28, 2023
    Publication date: April 18, 2024
    Inventors: Wenqing LIN, Hongjie ZHENG, Xiaobo LIU, Zecong CHEN, Lingyu LI, Qingjun ZHOU, Songhe WANG, Yongtang YUE, Jicheng HU, Yue ZHANG, Shanshan MIAO
  • Patent number: 11912932
    Abstract: An encapsulated polymer flooding method and system for enhancing oil recovery includes: (1) determining reservoir parameters, a well deployment, and a development dynamic state of a target oil reservoir; (2) determining a near-wellbore targeted profile control area and a far-wellbore targeted viscosification area; (3) designing and synthesizing an encapsulated polymer according to conditions of the target oil reservoir; (4) evaluating and determining whether the anti-shearing performance, the sustained release and viscosification performance, the injection performance, and the profile control performance of the encapsulated polymer meet expected performance requirements based on laboratory tests; (5) formulating an injection scheme for an encapsulated polymer flooding field; and (6) monitoring the development dynamic state of the oil reservoir; according to the present disclosure, the polymer is wrapped with a shell layer, which greatly reduces the shear degradation during injection of the polymer and effecti
    Type: Grant
    Filed: June 21, 2023
    Date of Patent: February 27, 2024
    Assignee: CHINA UNIVERSITY OF PETROLEUM (EAST CHINA)
    Inventors: Jian Hou, Bei Wei, Yongsheng Liu, Kang Zhou, Qingjun Du, Yongge Liu
  • Publication number: 20240016852
    Abstract: The present invention discloses the application of retinal pigment epithelial cells for replacing corneal endothelial cells, preventing and treating diseases or symptoms such as corneal endothelial functional decompensation. The retinal pigment epithelial cell suspension provided by the present invention can restore corneal transparency, reduce corneal thickness, reconstruct corneal endothelial barrier function, effectively treat corneal endothelial functional decompensation, and has a wide range of application values and positive social benefits for the treatment or recovery of people with visual impairment due to corneal injury.
    Type: Application
    Filed: July 14, 2023
    Publication date: January 18, 2024
    Inventors: Weiyun Shi, Qingjun Zhou, Zongyi Li, Chunxiao Dong, Haoyun Duan
  • Patent number: 11761003
    Abstract: Long-chain non-coding RNA NEAT1 are used in the preparation of drugs for the treatment of Fuchs' endothelial corneal dystrophy. Overexpression of the long-chain non-coding RNA NEAT1 can effectively reduce corneal endothelial damage, alleviate the symptoms of corneal edema, can be used for the treatment of Fuchs' endothelial corneal malnutrition.
    Type: Grant
    Filed: October 7, 2022
    Date of Patent: September 19, 2023
    Assignee: Eye Institute of Shandong First Medical University
    Inventors: Weiyun Shi, Qun Wang, Qingjun Zhou, Shengqian Dou, Hui Jiang, Bin Zhang
  • Publication number: 20230181496
    Abstract: The present disclosure provides use of a norepinephrine or a ?-adrenergic receptor inhibitor in the preparation of a medicament for nerve injury repair in diabetes, and belongs to the technical field of nerve repair drugs. By inhibiting norepinephrine secretion or antagonizing ?2-adrenergic receptors, the present disclosure promotes the expression of neurotrophic factors in epithelial cells to further regulate nerve repair. Therefore, the present disclosure provides the use of a norepinephrine inhibitor or a ?-adrenergic receptor inhibitor in the preparation of a medicament for nerve injury repair in diabetes. The inhibitor provided by the present disclosure features excellent stability and low cost, and has excellent clinical application prospects.
    Type: Application
    Filed: May 4, 2022
    Publication date: June 15, 2023
    Inventors: Qingjun ZHOU, Ya LI, Xingyue YUAN
  • Publication number: 20230110021
    Abstract: A composite hydrogel contains alginate hydrogel and acellular matrix hydrogel. The ingredients used to produce the acellular matrix hydrogel contains acellular matrix and transglutaminases (TGases). The alginate hydrogel contains salginate complex. The alginate hydrogel and acellular matrix hydrogel constitute a three-dimensional crosslinking structure. The TGases can catalyze isopeptide bonding between acellular matrixes, and thus forms acellular matrix hydrogel through crosslinking.
    Type: Application
    Filed: October 5, 2022
    Publication date: April 13, 2023
    Inventors: Weiyun SHI, Qingjun ZHOU, Long ZHAO, Zhen SHI
  • Publication number: 20230085277
    Abstract: Long-chain non-coding RNA are used in the preparation of drugs for the treatment of Fuchs' endothelial corneal dystrophy. Overexpression of the long-chain non-coding RNA NEAT1 can effectively reduce corneal endothelial damage, alleviate the symptoms of corneal edema, can be used for the treatment of Fuchs' endothelial corneal malnutrition.
    Type: Application
    Filed: October 7, 2022
    Publication date: March 16, 2023
    Inventors: Weiyun SHI, Qun WANG, Qingjun ZHOU, Shengqian DOU, Hui JIANG, Bin ZHANG
  • Patent number: 11508618
    Abstract: Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide, silicon nitride, aluminum oxide or zirconium oxide are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications.
    Type: Grant
    Filed: July 14, 2021
    Date of Patent: November 22, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Yung-Chen Lin, Qingjun Zhou, Ying Zhang, Ho-yung David Hwang
  • Patent number: 11302519
    Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
    Type: Grant
    Filed: September 9, 2015
    Date of Patent: April 12, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Srinivas D. Nemani, Jeremiah T. Pender, Qingjun Zhou, Dmitry Lubomirsky, Sergey G. Belostotskiy
  • Publication number: 20220064768
    Abstract: The present invention discloses a seawater-corrosion-resistant steel, the mass percentage of the chemical elements thereof being: 0.03-0.05% of C, 0.04-0.08% of Si, 0.8-1.2% of Mn, 0.1-0.2% of Cu, 2.5-5.5% of Cr, 0.05-0.15% of Ni, 0.15-0.35% of Mo, 1.5-3.5% of Al, 0.01-0.02% of Ti, 0.0015-0.003% of Ca, and the balance being Fe and other inevitable impurities. The present invention further discloses a method for manufacturing the seawater-corrosion-resistant steel. The method includes the following steps: (1) smelting and casting; (2) reheating: reheating a casting blank to 1200° C.-1260° C.; (3) rough rolling; (4) finish rolling; (5) coiling; and (6) cooling to room temperature. The seawater-corrosion-resistant steel has good seawater corrosion resistance and excellent mechanical properties.
    Type: Application
    Filed: December 24, 2019
    Publication date: March 3, 2022
    Applicant: BAOSHAN IRON & STEEL CO., LTD.
    Inventors: Donghui WEN, Fengming SONG, Ana YANG, Wei WANG, Zigang LI, Qingjun ZHOU, Lede MIAO
  • Publication number: 20210343592
    Abstract: Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide, silicon nitride, aluminum oxide or zirconium oxide are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications.
    Type: Application
    Filed: July 14, 2021
    Publication date: November 4, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Yung-Chen Lin, Qingjun Zhou, Ying Zhang, Ho-yung David Hwang
  • Patent number: 11094589
    Abstract: Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide, silicon nitride, aluminum oxide or zirconium oxide are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: August 17, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Yung-Chen Lin, Qingjun Zhou, Ying Zhang, Ho-yung David Hwang
  • Patent number: 10840138
    Abstract: Processing methods may be performed to expose a contact region on a semiconductor substrate. The methods may include selectively recessing a first metal on a semiconductor substrate with respect to an exposed first dielectric material. The methods may include forming a liner over the recessed first metal and the exposed first dielectric material. The methods may include forming a second dielectric material over the liner. The methods may include forming a hard mask over selected regions of the second dielectric material. The methods may also include selectively removing the second dielectric material to expose a portion of the liner overlying the recessed first metal.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: November 17, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Yung-Chen Lin, Qingjun Zhou, Ying Zhang, Ho-yung Hwang
  • Patent number: 10770568
    Abstract: Methods for forming semiconductor devices, such as FinFETs, are provided. In an embodiment, a fin structure processing method includes removing a portion of a first fin of a plurality of fins formed on a substrate to expose a surface of a remaining portion of the first fin, wherein the fins are adjacent to dielectric material structures formed on the substrate; performing a deposition operation to form features on the surface of the remaining portion of the first fin by depositing a Group III-V semiconductor material in a substrate processing environment; and performing an etching operation to etch the features with an etching gas to form a plurality of openings between adjacent dielectric material structures, wherein the etching operation is performed in the same chamber as the deposition operation.
    Type: Grant
    Filed: February 15, 2019
    Date of Patent: September 8, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Xinyu Bao, Ying Zhang, Qingjun Zhou, YungChen Lin
  • Patent number: 10741393
    Abstract: Embodiments described herein relate to substrate processing methods. The methods include forming a patterned hardmask material on a substrate, forming first mandrel structures on exposed regions of the substrate, and depositing a gap fill material on the substrate over the hardmask material and the first mandrel structures. The first mandrel structures are removed to expose second regions of the substrate and form second mandrel structures comprising the hardmask material and the gap fill material. Fin structures are deposited on the substrate using the second mandrel structures as a mask.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: August 11, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yung-chen Lin, Qingjun Zhou, Xinyu Bao, Ying Zhang
  • Patent number: 10692728
    Abstract: Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide and/or silicon nitride are described. Certain embodiments relate to the formation of fin-etched substrates. Other embodiments relate to the removal of source drain caps from substrates. Further embodiments relate to the processing of substrates comprising vias and/or metal contacts with bottom etch stop layers and/or liner layers.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: June 23, 2020
    Assignee: MICROMATERIALS LLC
    Inventors: Qingjun Zhou, Ying Zhang, Yung-Chen Lin
  • Patent number: 10593594
    Abstract: Methods of forming a self-aligned via comprising recessing a first metallization layer comprising a set of first conductive lines that extend along a first direction on a first insulating layer on a substrate. A second insulating layer is formed on the first insulating layer. A via is formed through the second insulating layer to one of the first conductive lines. Semiconductor devices comprising the self-aligned via and apparatus for forming the self-aligned via are also disclosed.
    Type: Grant
    Filed: December 11, 2018
    Date of Patent: March 17, 2020
    Assignee: Micromaterials LLC
    Inventors: Yung-Chen Lin, Qingjun Zhou, Ying Zhang, Ho-yung David Hwang, Uday Mitra, Regina Freed