Abstract: A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a first conductive layer, a second conductive layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The first conductive layer is sandwiched between the source electrode and the semiconductor layer. The second conductive layer is sandwiched between the drain electrode and the semiconductor layer. The gate electrode is insulated from the source electrode, the drain electrode, the first conductive layer, the second conductive layer, and the semiconductor layer by the insulating layer. A first work-function of a first material of the first conductive layer and the second conductive layer is same as a second work-function of a second material of the semiconductor layer.

Abstract: A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a first conductive layer, a second conductive layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The first conductive layer is sandwiched between the source electrode and the semiconductor layer. The second conductive layer is sandwiched between the drain electrode and the semiconductor layer. The gate electrode is insulated from the source electrode, the drain electrode, the first conductive layer, the second conductive layer, and the semiconductor layer by the insulating layer. A first work-function of a first material of the first conductive layer and the second conductive layer is same as a second work-function of a second material of the semiconductor layer.

Abstract: A thin film transistor based on carbon nanotubes includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The semiconductor layer is electrically connected with the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The work-functions of the source electrode and of the drain electrode are different from that of the semiconductor layer, enabling the creation of both p-type and n-type field-effect transistors.