Abstract: Embodiments of the present disclosure are directed towards techniques and configurations for layered interconnect structures for bridge interconnection in integrated circuit assemblies. In one embodiment, an apparatus may include a substrate and a bridge embedded in the substrate. The bridge may be configured to route electrical signals between two dies. An interconnect structure, electrically coupled with the bridge, may include a via structure including a first conductive material, a barrier layer including a second conductive material disposed on the via structure, and a solderable material including a third conductive material disposed on the barrier layer. The first conductive material, the second conductive material, and the third conductive material may have different chemical composition. Other embodiments may be described and/or claimed.

Abstract: Methods of forming anchor structures in package substrate microvias are described. Those methods and structures may include forming a titanium layer in an opening of a package substrate using a first deposition process, wherein the opening comprises an undercut region, and wherein the first conductive layer does not substantially form in an anchor region of the undercut region. The titanium layer may then be re-sputtered using a second deposition process, wherein the titanium layer is formed in the anchor region.

Abstract: Embodiments of the present disclosure are directed towards techniques and configurations for dual surface finish package substrate assemblies. In one embodiment a method includes depositing a first surface finish on one or more electrical routing features located on a first side of a package substrate and on one or more lands located on a second side of the package substrate, the second side being opposite the first side of the substrate. The method may further include removing the first surface finish on the first side of the package substrate; and depositing a second surface finish on the one or more electrical routing features of the first side. The depositing of the second surface finish may be accomplished by one of a Direct Immersion Gold (DIG) process or an Organic Solderability Preservative (OSP) process. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the present disclosure are directed towards coreless substrates with passive device pads, as well as methods for forming coreless substrates with passive device pads and package assemblies and systems incorporating such coreless substrates. A coreless substrate may comprise a plurality of build-up layers, such as bumpless build-up layers (BBUL). In various embodiments, electrical routing features and passive device pads may be disposed on an outer surface of the substrate. In various embodiments, the passive device pads may be coupled with a conductive element disposed on or within the build-up layers. In various embodiments, an electrical path may be defined in the plurality of build-up layers to route electrical power between the passive device pads and a die coupled to the coreless substrate.

Abstract: A bumpless build-up layer (BBUL) integrated circuit package and method of manufacturing are presented. In some embodiments, the package-on-package (PoP) pads of the BBUL integrated circuit package has a surface finish that can be palladium, nickel-palladium, nickel-gold, nickel-palladium-gold, or palladium-nickel-palladium-gold. In some embodiments, the PoP pad surface finish can be formed using either an electroless or electrolytic process.