Abstract: Disclosed are a video stitching method and a video stitching device. The video stitching method is applicable for stitching a first video and a second video, and includes: performing feature extraction, feature matching and screening on a first target frame of the first video and a second target frame of the second video, so as to obtain a first feature point pair set; performing forward tracking on the first target frame and the second target frame, so as to obtain a second feature point pair set; performing backward tracking on the first target frame and the second target frame, so as to obtain a third feature point pair set; and calculating a geometric transformation relationship between the first target frame and the second target frame according to a union of the first feature point pair set, the second feature point pair set and the third feature point pair set.

Abstract: Disclosed are a video stitching method and a video stitching device. The video stitching method is applicable for stitching a first video and a second video, and includes: performing feature extraction, feature matching and screening on a first target frame of the first video and a second target frame of the second video, so as to obtain a first feature point pair set; performing forward tracking on the first target frame and the second target frame, so as to obtain a second feature point pair set; performing backward tracking on the first target frame and the second target frame, so as to obtain a third feature point pair set; and calculating a geometric transformation relationship between the first target frame and the second target frame according to a union of the first feature point pair set, the second feature point pair set and the third feature point pair set.

Abstract: A UV radiation detector includes: a diode including a substrate having a first side and a second side, the first side and the second side being located on opposing faces of the substrate, an active layer including rocksalt phase crystalline structure CaS disposed on the first side of the substrate, an electrical contact disposed on the second side of the substrate, and a semi-transparent conducting layer disposed on the active layer; and a circuit connecting the semi-transparent conducting layer and the electrical contact. The UV radiation detector detects radiation having a wavelength between 200 and 280 nm.

Abstract: A UV radiation detector includes: a diode including a substrate having a first side and a second side, the first side and the second side being located on opposing faces of the substrate, an active layer including rocksalt phase crystalline structure CaS disposed on the first side of the substrate, an electrical contact disposed on the second side of the substrate, and a semi-transparent conducting layer disposed on the active layer; and a circuit connecting the semi-transparent conducting layer and the electrical contact. The UV radiation detector detects radiation having a wavelength between 200 and 280 nm.

Abstract: A diode, UV radiation detector, and method of manufacturing semiconductor device that includes a diode with a substrate having a first side and a second side. The diode includes an active layer having a rocksalt phase crystalline structure of CaS disposed on the first side of the substrate, and an electrical contact disposed on the second side of the substrate. The diode also includes a semi-transparent conducting layer disposed on the active layer. The UV radiation detector includes the diode and circuitry connecting the semi-transparent conducting layer and the electrical contact. The UV radiation detector may detect radiation having a wavelength between 220 and 280 nm. The substrate may have a lattice mismatch between 0.47% and 12.6% with respect to the active layer.