Patents by Inventor Qinglong Li

Qinglong Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light emitting diode having improved quantum efficiency at low injection current
    Patent number: 10043941
    Abstract: Provided is a light emitting semiconductor structure that operates as a light emitting diode (LED). In embodiments of the invention, the light emitting semiconductor structure includes a first barrier region, a second barrier region, and a single quantum well having a preselected thickness between the first barrier region and the second barrier region. The preselected thickness according to embodiments is selected to achieve a predetermined charge density in the quantum well. The predetermined charge density according to embodiments results from a predetermined bias current applied to the semiconductor structure. The predetermined bias current according to embodiments comprises less than about 1 mA.
    Type: Grant
    Filed: January 31, 2017
    Date of Patent: August 7, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ning Li, Qinglong Li, Kunal Mukherjee, Devendra K. Sadana, Ghavam G. Shahidi
  • LIGHT EMITTING DIODE HAVING IMPROVED QUANTUM EFFICIENCY AT LOW INJECTION CURRENT
    Publication number: 20180219122
    Abstract: Provided is a light emitting semiconductor structure that operates as a light emitting diode (LED). In embodiments of the invention, the light emitting semiconductor structure includes a first barrier region, a second barrier region, and a single quantum well having a preselected thickness between the first barrier region and the second barrier region. The preselected thickness according to embodiments is selected to achieve a predetermined charge density in the quantum well. The predetermined charge density according to embodiments results from a predetermined bias current applied to the semiconductor structure. The predetermined bias current according to embodiments comprises less than about 1 mA.
    Type: Application
    Filed: January 31, 2017
    Publication date: August 2, 2018
    Inventors: NING LI, QINGLONG LI, KUNAL MUKHERJEE, DEVENDRA K. SADANA, GHAVAM G. SHAHIDI
  • Esters of 4, 9-dihydroxy-naphtho [2, 3-b] furans for disease therapies
    Patent number: 9150530
    Abstract: The present invention discloses esters of 4,9-dihydroxy-naphtho[2,3-b]furans and methods of making and using the same. The present invention also discloses conversion of the esters into therapeutically active 4,9-dihydroxy-naphtho[2,3-b]furans in vivo. The present invention furthermore discloses pharmaceutical compositions comprising the esters of 4,9-dihydroxy-naphtho[2,3-b]furans for the treatment of various indications including proliferative diseases.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: October 6, 2015
    Assignee: Zhoushan Haizhongzhou Xinsheng Pharmaceuticals Co., Ltd.
    Inventors: Zhiwei Jiang, Aijin Wang, Hongwei Hu, Jiali Xu, Yuesong Hu, Xian Li, Yan Ye, Jie Wang, Qinglong Li
  • NOVEL ESTERS OF 4, 9-DIHYDROXY-NAPHTHO [2, 3-b] FURANS FOR DISEASE THERAPIES
    Publication number: 20130345176
    Abstract: The present invention discloses esters of 4,9-dihydroxy-naphtho[2,3-b]furans and methods of making and using the same. The present invention also discloses conversion of the esters into therapeutically active 4,9-dihydroxy-naphtho[2,3-b]furans in vivo. The present invention furthermore discloses pharmaceutical compositions comprising the esters of 4,9-dihydroxy-naphtho[2,3-b]furans for the treatment of various indications including proliferative diseases.
    Type: Application
    Filed: March 4, 2011
    Publication date: December 26, 2013
    Applicant: Zhoushan Haizhongzhou Xinsheng Pharmaceuticals Co., Ltd.
    Inventors: Zhiwei Jiang, Aijin Wang, Hongwei Hu, Jiali Xu, Yuesong Hu, Xian Li, Yan Ye, Jie Wang, Qinglong Li