Abstract: The present disclosure provides a twisting machine for automatic donning, including an outer yarn branch rail arranged at the middle position of the twisting machine, wherein the outer yarn branch rail is positioned above the twisting machine, so as to successively drive the outer yarn carrier assembly to deliver the outer yarn winding package by suspending; further including an inner yarn branch rail arranged at the both sides of the twisting machine, the inner yarn branch rail is positioned above the twisting machine, so as to successively drive the inner yarn carrier assembly to deliver the inner yarn winding package by suspending. The forementioned structure enables the outer yarn winding package and the inner yarn winding package to be delivered high-efficiently in large scale by suspending and conveying, so as to largely reduce the labor intensity of operators and greatly improve production efficiency.

Abstract: The present disclosure provides a whole-process automatic loading-and-unloading and logistics system, including an outer yarn preparation area, an inner yarn preparation area, a weaving area and an in-air conveying rail; the outer yarn preparation area is configured to have a carrier assembly, which delivers an outer yarn winding package to an outer yarn branch rail of a twisting machine in a twisting area via the out yarn main rail of the in-air conveying rail; in the inner yarn preparation area, the carrier assembly delivers an inner yarn winding package to an inner yarn branch rail of the twisting machine in the twisting area via the inner yarn main rail of the in-air conveying rail; in the twisting area, the carrier assembly delivers a yarn product to a yarn product donning rail in the weaving area via the yarn product main rail of the in-air conveying rail.

Abstract: A lifting system for inner yarn rails relates to the technical field of twisting and weaving equipment in factories, the system comprises an in-air conveying rail, and a carrier unit, wherein the in-air conveying rail is configured to convey the carrier unit, and the carrier unit is configured to carry a winding package; an inner yarn-carrier-lifting section is arranged on the in-air conveying rail, the inner yarn-carrier-lifting section is positioned on both sides of a twisting machine; when the inner yarn-carrier-lifting section rises, it communicates with the in-air conveying rail; when the inner yarn-carrier-lifting section descends, it approaches the position of a spindle bucket of the twisting machine. The winding packages delivered each time by one carrier unit can correspond to every spindle position of the twisting machine, dramatically improving the delivery efficiency of the winding packages.

Abstract: A display substrate and a display device are provided. The display substrate includes a base substrate, at least one group of contact pads, a plurality of first light-emitting elements, a plurality of first pixel driving circuits, a plurality of connecting traces, a plurality of data lines and a plurality of leads. The display area includes a first display area and a second display area; the first light-emitting elements are located in the first display area; the first pixel driving circuits are located in the second display area; the leads are located in the first display area and the peripheral area, and connect the data lines and the at least one group of contact pads; orthographic projections of the first light-emitting elements on a substrate surface of the base substrate are at least partly overlapped with orthographic projections of the leads on the substrate surface of the base substrate.

Abstract: Disclosed are apparatuses including transistor and methods for fabricating the same. The transistor may include a drain substantially enclosed in a drain silicide layer, wherein an integral drain via portion of the drain silicide layer is coupled to a second drain contact and wherein a first drain via couples the drain silicide layer to a first drain contact. The transistor may include a source substantially enclosed in a source silicide layer, wherein an integral source via portion of the source silicide layer is coupled to a second source contact and wherein a first source via couples the source silicide layer to a first source contact. The transistor may include a gate disposed between the source and the drain.

Abstract: Disclosed are standard cells, transistors, and methods for fabricating the same. In an aspect, a transistor includes a drain and a source each including a first drain/source silicide layer on a frontside surface of the drain/source and a second drain/source silicide layer on a backside surface of the drain/source. The first drain silicide layer is coupled to a first drain contact structure or the second drain silicide layer is coupled to a second drain contact structure. The first source silicide layer is coupled to a first source contact structure or the second source silicide layer is coupled to a second source contact structure. A gate structure is disposed between the source and the drain. A channel is at least partially enclosed by the gate structure and disposed between the source and the drain and is recessed from the backside surfaces of the source and drain.

Abstract: Disclosed is an atomic force microscopy system includes a laser source configured to generate an optical probe beam containing light of different spectral light components at different optical wavelengths, a dispersive optical device positioned to receive the optical probe beam and configured to disperse the optical probe beam into different dispersed light beams that are at different optical wavelengths and are spatially separated from one another, a cantilever array including a plurality of cantilevers structured to detect a sample and configured to deflect the different dispersed light beams by moving in position based on an interaction with the sample to produce multiple deflected output beams at different output optical wavelengths from the cantilevers, and a plurality of photodetectors to receive the multiple deflected output beams of different wavelengths from the cantilevers, respectively.

Abstract: Disclosed is an atomic force microscopy system includes a laser source configured to generate an optical probe beam containing light of different spectral light components at different optical wavelengths, a dispersive optical device positioned to receive the optical probe beam and configured to disperse the optical probe beam into different dispersed light beams that are at different optical wavelengths and are spatially separated from one another, a cantilever array including a plurality of cantilevers structured to detect a sample and configured to deflect the different dispersed light beams by moving in position based on an interaction with the sample to produce multiple deflected output beams at different output optical wavelengths from the cantilevers, and a plurality of photodetectors to receive the multiple deflected output beams of different wavelengths from the cantilevers, respectively.

Abstract: A fluorescence polarization immunoassay (FPIA) method for detecting carbaryl. The method includes the steps of mixing a sample to be tested, a fluorescent marker solution and an anti-carbaryl monoclonal antibody solution; incubating for carrying out a competitive reaction; determining a fluorescence polarization value of the resulting system; calculating the concentration of carbaryl in the sample to be tested according to a standard curve of fluorescence polarization values-carbaryl concentrations in carbaryl standard samples. According to the FPIA method for detecting carbaryl provided in the present invention, only the addition of a sample is required, and no separation and washing operations are needed.

Abstract: Provided are Ti(C,N)-based cermets with Ni3Al and Ni as binder and a preparation method thereof. The Ti(C,N)-based cermets are prepared by raw materials subjected to ball-mill mixing, die forming, vacuum degreasing and vacuum sintering, wherein weight percentage of each chemical component of the raw materials is as follows: TiC 34.2˜43%, TiN 8˜15%, Mo 10˜15%, WC 5˜10%, graphite 0.8˜1.0%, Ni 20˜24%, and Ni3Al powder containing B 6˜10%. Ni powder and Ni3Al powder containing B are used as binder. The Ti(C,N)-based cermets feature in excellent corrosion resistance, oxidation resistance and mechanical properties at high temperature, has a hardness of 89.0˜91.9 HRA, a room temperature bending strength of 1600 MPa or more, and a fracture toughness of 14 MPa·m1/2 or more, and is applicable for manufacturing high-speed cutting tools, dies and heat-resisting and corrosion-resisting components.

Abstract: Provided are Ti(C,N)-based cermets with Ni3Al and Ni as binder and a preparation method thereof. The Ti(C,N)-based cermets are prepared by raw materials subjected to ball-mill mixing, die forming, vacuum degreasing and vacuum sintering, wherein weight percentage of each chemical component of the raw materials is as follows: TiC 34.2˜43%, TiN 8˜15%, Mo 10˜15%, WC 5˜10%, graphite 0.8˜1.0%, Ni 20˜24%, and Ni3Al powder containing B 6˜10%. Ni powder and Ni3Al powder containing B are used as binder. The Ti(C,N)-based cermets feature in excellent corrosion resistance, oxidation resistance and mechanical properties at high temperature, has a hardness of 89.0˜91.9 HRA, a room temperature bending strength of 1600 MPa or more, and a fracture toughness of 14 MPa·m1/2 or more, and is applicable for manufacturing high-speed cutting tools, dies and heat-resisting and corrosion-resisting components.