Abstract: Disclosed is a molecular glass of a spirofluorene derivative having a molecular structure as follows: formula (I), wherein each of R1-R12 is a hydrogen atom, a hydroxyl group, a methoxyl group or an acid-sensitive substituent; substituents R1˜R12 can be identical or different, but on the same benzene ring the substituents cannot all be hydrogen atoms. The molecular glass has a good solubility in various polar solvents, is suitable to be made into a film; meanwhile the molecular glass has a very high glass transition temperature and meets the requirements of the photolithography processing technology. Also disclosed is a preparation method of the above-mentioned molecular glass of a spirofluorene derivative. The synthetic process of the method is simple and suitable for industrialization.

Abstract: Disclosed is a molecular glass of a spirofluorene derivative having a molecular structure as follows: formula (I), wherein each of R1-R12 is a hydrogen atom, a hydroxyl group, a methoxyl group or an acid-sensitive substituent; substituents R1˜R12 can be identical or different, but on the same benzene ring the substituents cannot all be hydrogen atoms. The molecular glass has a good solubility in various polar solvents, is suitable to be made into a film; meanwhile the molecular glass has a very high glass transition temperature and meets the requirements of the photolithography processing technology. Also disclosed is a preparation method of the above-mentioned molecular glass of a spirofluorene derivative. The synthetic process of the method is simple and suitable for industrialization.

Abstract: A serial memory device having a non-volatile memory array including a plurality of memory blocks, one or more said plurality of blocks being capable of being placed in a locked or an unlocked state upon receiving designated lock or unlock signal sequences is provided. The unlock signal sequences comprises at least two sequential signal sequences: a first unlock sequence, which has 1 to 7 signal bits, is applied to one of address input pins or a logic low enabled write-protection input pin and a second unlock sequence follows the first unlock signal sequence and is applied to a serial data access pin. The memory device further comprising a control logic circuit block coupled to a write-protection circuit block to provide means to identify the designated lock and unlock signal sequences and to set a protection state in a security area.

Abstract: A serial memory device having a non-volatile memory array including a plurality of memory blocks, one or more said plurality of blocks being capable of being placed in a locked or an unlocked state upon receiving designated lock or unlock signal sequences is provided. The unlock signal sequences comprises at least two sequential signal sequences: a first unlock sequence, which has 1 to 7 signal bits, is applied to one of address input pins or a logic low enabled write-protection input pin and a second unlock sequence follows the first unlock signal sequence and is applied to a serial data access pin. The memory device further comprising a control logic circuit block coupled to a write-protection circuit block to provide means to identify the designated lock and unlock signal sequences and to set a protection state in a security area.