Abstract: According to embodiments of the present invention, an energy harvesting device is provided. The energy harvesting device includes a microchannel arranged to receive a fluid, a bluff body arranged to interact with the fluid flowing through the microchannel to generate a vortex fluid street, and an energy harvesting element arranged to interact with the vortex fluid street to harvest energy from the fluid. According to further embodiments of the present invention, a method of harvesting energy is also provided.

Abstract: A microelectromechanical system (MEMS) device, method of operating the MEMS device, and a method of forming the MEMS device are provided. The MEMS device includes a positioning mechanism and a locking mechanism. The positioning mechanism includes a first arm structure having a first surface and a second surface; a second arm structure having a first surface and a second surface; wherein the first surface of the first arm structure faces the first surface of the second arm structure. The positioning mechanism also includes a first actuator disposed adjacent to the second surface of the first arm structure facing away from the second arm structure; and a second actuator disposed adjacent to the second surface of the second arm structure facing away from the first arm structure.

Abstract: Gold ores are processed to obtain a mixture comprising gold particles and other particles, such as quartz particles. The mixture then passes through a location near a quantum resonance driver. The quantum resonance driver generates a macro quantum resonance effect that causes the gold particles to move away from the driver so that gold particles are separated from the mixture.

Abstract: The wafer arrangement (100) provided comprises a first wafer (101), which comprises an integrated circuit and a recess (105). The wafer arrangement further comprises a portion of a second wafer (103), which comprises a carrier portion and a protrusion (107), the protrusion comprising an active component or actively controlled component (109) such as a MEMS component, wherein the portion of the second wafer (103) is coupled to the first wafer (101) such that the protrusion (107) is received in the recess (105). The invention provides a mechanism for accurately aligning an active component (109) on the second wafer (103) with components on the first wafer (101), such as photonic, electronic or optical components.

Abstract: A microelectromechanical system (MEMS) device, method of operating the MEMS device, and a method of forming the MEMS device are provided. The MEMS device includes a positioning mechanism and a locking mechanism. The positioning mechanism includes a first arm structure having a first surface and a second surface; a second arm structure having a first surface and a second surface; wherein the first surface of the first arm structure faces the first surface of the second arm structure. The positioning mechanism also includes a first actuator disposed adjacent to the second surface of the first arm structure facing away from the second arm structure; and a second actuator disposed adjacent to the second surface of the second arm structure facing away from the first arm structure.

Abstract: Embodiments provide an optical device including a carrier; a light source; a receiving chamber in or on the carrier wherein the receiving chamber is configured to receive an optical element; the optical element received in the receiving chamber; a plurality of actuators; and a waveguide arranged to receive light transmitted from the light source through the optical element. At least one of the receiving chamber and the actuators is arranged and configured to adjust the position of the optical element in the receiving chamber in a first direction perpendicular to the main surface of the carrier and in a second direction in-plane with the main surface of the carrier.

Abstract: The wafer arrangement (100) provided comprises a first wafer (101), which comprises an integrated circuit and a recess (105). The wafer arrangement further comprises a portion of a second wafer (103), which comprises a carrier portion and a protrusion (107), the protrusion comprising an active component or actively controlled component (109) such as a MEMS component, wherein the portion of the second wafer (103) is coupled to the first wafer (101) such that the protrusion (107) is received in the recess (105). The invention provides a mechanism for accurately aligning an active component (109) on the second wafer (103) with components on the first wafer (101), such as photonic, electronic or optical components.

Abstract: An electronic package (200) comprises a substrate (201), a first carrier layer arrangement (211) adapted to dissipate heat from at least one chip (217) mounted thereon, and a heat exchanger (221) mounted on the first carrier layer arrangement. The first carrier layer arrangement comprises at least one internal microchannel (213), which is fluidically interconnected with the heat exchanger (221) though an inlet (215) and an outlet (219). The heat exchange further comprises a pump (223) controlling fluid flow through the microchannel (213). The package may further comprise a stack of carrier layer arrangements (211), each of which may have one or more chips (217) mounted thereon.

Abstract: A silicon condenser microphone is described. The silicon condenser microphone of the present invention comprises a perforated backplate comprising a portion of a single crystal silicon substrate, a support structure formed on the single crystal silicon substrate, and a floating silicon diaphragm supported at its edge by the support structure and lying parallel to the perforated backplate and separated from the perforated backplate by an air gap.

Abstract: When using hot alkaline etchants such as KOH, the wafer front side, where various devices and/or circuits are located, must be isolated from any contact with the etchant. This has been achieved by using two chambers that are separated from each other by the wafer that is to be etched. Etching solution in one chamber is in contact with the wafer's back surface while deionized water in the other chamber contacts the front surface. The relative liquid pressures in the chambers is arranged to be slightly higher in the chamber of the front surface so that leakage of etchant through a pin hole from back surface to front surface does not occur. As a further precaution, a monitor to detect the etchant is located in the DI water so that, if need be, etching can be terminated before irreparable damage is done.

Abstract: When using hot alkaline etchants such as KOH, the wafer front side, where various devices and/or circuits are located, must be isolated from any contact with the etchant. This has been achieved by using two chambers that are separated from each other by the wafer that is to be etched. Etching solution in one chamber is in contact with the wafer's back surface while deionized water in the other chamber contacts the front surface. The relative liquid pressures in the chambers is arranged to be slightly higher in the chamber of the front surface so that leakage of etchant through a pin hole from back surface to front surface does not occur. As a further precaution, a monitor to detect the etchant is located in the DI water so that, if need be, etching can be terminated before irreparable damage is done.

Abstract: A silicon condenser microphone is described. The silicon condenser microphone of the present invention comprises a perforated backplate comprising a portion of a single crystal silicon substrate, a support structure formed on the single crystal silicon substrate, and a floating silicon diaphragm supported at its edge by the support structure and lying parallel to the perforated backplate and separated from the perforated backplate by an air gap.

Abstract: A method of fabricating a highly perforated silicon diaphragm is described. A single crystal silicon substrate of a first conductivity type is provided. First ions of a second conductivity type opposite the first conductivity type are implanted into the single crystal silicon substrate to form an etch stop layer. Second ions of the first conductivity type are selectively implanted into the single crystal silicon substrate to form a pattern of holes in a portion of the substrate. Third ions of the first conductivity type are implanted overlying the pattern of holes and forming a first ohmic contact region. Fourth ions of the second conductivity type are implanted into the substrate not surrounding the pattern of holes to form a second ohmic contact region. A nitride layer is deposited on a frontside and a backside of the silicon substrate. Contacts are formed through the nitride layer to the first and second ohmic contact regions.

Abstract: A silicon condenser microphone is described. The silicon condenser microphone of the present invention comprises a perforated backplate comprising a portion of a single crystal silicon substrate, a support structure formed on the single crystal silicon substrate, and a floating silicon diaphragm supported at its edge by the support structure and lying parallel to the perforated backplate and separated from the perforated backplate by an air gap.

Abstract: A silicon condenser microphone is described. The silicon condenser microphone of the present invention comprises a perforated backplate comprising a portion of a single crystal silicon substrate, a support structure formed on the single crystal silicon substrate, and a floating silicon diaphragm supported at its edge by the support structure and lying parallel to the perforated backplate and separated from the perforated backplate by an air gap.

Abstract: When using hot alkaline etchants such as KOH, the wafer front side, where various devices and/or circuits are located, must be isolated from any contact with the etchant. This has been achieved by using two chambers that are separated from each other by the wafer that is to be etched. Etching solution in one chamber is in contact with the wafer's back surface while deionized water in the other chamber contacts the front surface. The relative liquid pressures in the chambers is arranged to be slightly higher in the chamber of the front surface so that leakage of etchant through a pin hole from back surface to front surface does not occur. As a further precaution, a monitor to detect the etchant is located in the DI water so that, if need be, etching can be terminated before irreparable damage is done.