Abstract: An ion-modified microwave dielectric ceramic is provided and a chemical formula thereof is Zn0.15Nb0.3[Ti1-x(W1/3Zr1/2)x]0.55O2. In the chemical formula, x is in a range of 0.01 to 0.03. The ion-modified microwave dielectric ceramic includes the following components in parts by weight: 12.58-12.67 parts of ZnO, 41.11-41.39 parts of TiO2, 43.93-45.14 parts of Nb2O5, 0.44-1.31 parts of WO3, and 0.35-1.05 parts of ZrO2. A preparation method of the ion-modified microwave dielectric ceramic can be applied to different industrial requirements, such as electronic components, communication equipment, and microwave components; and the obtained ion-modified microwave dielectric ceramic expands a practical value of a Zn0.15Nb0.3Ti0.55O2 series microwave dielectric ceramic in electronic ceramic manufacturing.

Abstract: A Mg—Ta based dielectric ceramic for multi-layer ceramic capacitor (MLCC) and a low-temperature preparation method thereof are provided. By providing a glass additive with high matching with a Mg—Ta ceramic, a modifier A+12CO3—B2+O—C3+2O3—SiO2 (A=Li, K; B=MnO, CuO, BaO; C=B, Al) is intruded in to a main material MgO—Ta2O5, which can significantly reduce the sintering temperature and provide a negative temperature coefficient of dielectric constant of ?100±30 ppm/° C., and reduce the deterioration factors of loss caused by an additive for sintering, and prepare a dielectric material applied to RF MLCC with low loss, low cost and good process stability.

Abstract: A low-temperature sintered microwave dielectric ceramic material and a preparation method thereof are provided. The ceramic material includes a base material and a low-melting-point glass material; a general chemical formula of the base material is (Zn0.9Cu0.1)0.15Nb0.3(Ti0.9Zr0.1)0.55O2; a percent by weight of the low-melting-point glass material is in a range of 1 wt. % to 2 wt. %; chemical compositions of the low-melting-point glass material include A2CO3-M2O3—SiO2, A of which includes at least two of a lithium ion, a sodium ion, and a potassium ion, M of which includes at least one of a boron ion and a bismuth ion; and a sintering temperature of the ceramic material is in a range of 850° C. to 900° C. The microwave dielectric ceramic material has the advantages of low dielectric loss, simple and controllable process, etc., has good process stability, and can meet requirements for radio communication industry.

Abstract: A modified Ni—Ti—Ta dielectric material for multi-layer ceramic capacitor (MLCC) and a low-temperature preparation method thereof are provided. By using characteristics that radii of the Cu2+ ion and (Al1/2Nb1/2)4+ ion are close to those of Ni and Ti elements, respectively, Cu2+, Al3+ and Nb5+ ions are introduced into a Ni0.5Ti0.5TaO4 matrix for partial substitution, a negative temperature coefficient of dielectric constant of ?220±30 ppm/° C. is provided while a sintering temperature is significantly reduced, and deterioration factors of loss caused by sintering aids is reduced, so that the dielectric material applied to radio frequency MLCC with low loss, low cost and good process stability is prepared.

Abstract: A modified Ni—Ti—Ta dielectric material for multi-layer ceramic capacitor (MLCC) and a low-temperature preparation method thereof are provided. By using characteristics that radii of the Cu2+ ion and (Al½Nb½)4+ ion are close to those of Ni and Ti elements, respectively, Cu2+, Al3+ and Nb5+ ions are introduced into a Ni0.5Ti0.5TaO4 matrix for partial substitution, a negative temperature coefficient of dielectric constant of -220±30 ppm/°C is provided while a sintering temperature is significantly reduced, and deterioration factors of loss caused by sintering aids is reduced, so that the dielectric material applied to radio frequency MLCC with low loss, low cost and good process stability is prepared.

Abstract: A Mg—Ta based dielectric ceramic for multi-layer ceramic capacitor (MLCC) and a low-temperature preparation method thereof are provided. By providing a glass additive with high matching with a Mg—Ta ceramic, a modifier A+12CO3—B2+O—C3+2O3—SiO2 (A=Li, K; B=MnO, CuO, BaO; C=B, Al) is intruded in to a main material MgO—Ta2O5, which can significantly reduce the sintering temperature and provide a negative temperature coefficient of dielectric constant of ?100±30 ppm/° C., and reduce the deterioration factors of loss caused by an additive for sintering, and prepare a dielectric material applied to RF MLCC with low loss, low cost and good process stability.