Patents by Inventor Qingyuan Han

Qingyuan Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200144585
    Abstract: The present disclosure relates to a secondary battery and a method of manufacturing the secondary battery. The secondary battery includes: a case; an electrode assembly, accommodated in the case and including a main body and a tab connected to the main body; a cap plate, coupled to the case; an electrode terminal, located on an outer side of the cap plate and including a first metal layer and a second metal layer disposed one on top of another; and a current collecting member, connected between the tab and the electrode terminal.
    Type: Application
    Filed: October 29, 2019
    Publication date: May 7, 2020
    Applicant: Contemporary Amperex Technology Co., Limited
    Inventors: Yuqun ZENG, Fenggang Zhao, Qingyuan Jiang, Bo Han, Jiacai Cai, Qinglin Bai, Yuqian Wen, Zhiyang Wu
  • Patent number: 7629272
    Abstract: Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one embodiment, the film is exposed to broadband ultraviolet radiation of less than 240 nm for a period of time and intensity effective to remove the porogen material. In other embodiments, the low k dielectric film is exposed to a first ultraviolet radiation pattern effective to increase a crosslinking density of the film matrix while maintaining a concentration of the porogen material substantially the same before and after exposure to the first ultraviolet radiation pattern. The low k dielectric film can be then be processed to form a metal interconnect structure therein and subsequently exposed to a second ultraviolet radiation pattern effective to remove the porogen material from the low k dielectrics film and form a porous low k dielectric film.
    Type: Grant
    Filed: June 7, 2005
    Date of Patent: December 8, 2009
    Assignee: Axcelis Technologies, Inc.
    Inventors: Carlo Waldfried, Qingyuan Han, Orlando Escorcia, Ivan Berry, III
  • Patent number: 7078161
    Abstract: A low temperature plasma ashing process for use with substrates comprising a ferroelectric material. The process generally includes plasma ashing the photoresist and residues at a temperature of about room temperature to about 140° C., wherein the plasma is generated from a gas mixture consisting essentially of hydrogen and an inert gas, and wherein the ferroelectric material is exposed to the plasma.
    Type: Grant
    Filed: February 11, 2003
    Date of Patent: July 18, 2006
    Assignees: Axcelis Technologies, Inc., Intel Corporation
    Inventors: Carlo Waldfried, Qingyuan Han, Orlando Escorcia, Ebrahim Andideh
  • Patent number: 7011868
    Abstract: Low dielectric constant porous materials with improved elastic modulus and material hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and material hardness, and with comparable dielectric constant. The improvement in elastic modulus is typically greater than or about 50%, and more typically greater than or about 100%. The improvement in material hardness is typically greater than or about 50%. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure.
    Type: Grant
    Filed: July 24, 2003
    Date of Patent: March 14, 2006
    Assignee: Axcelis Technologies, Inc.
    Inventors: Carlo Waldfried, Qingyuan Han, Orlando Escorcia, Ralph Albano, Ivan L. Berry, III, Atsushi Shiota
  • Publication number: 20060024976
    Abstract: Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one embodiment, the film is exposed to broadband ultraviolet radiation of less than 240 nm for a period of time and intensity effective to remove the porogen material. In other embodiments, the low k dielectric film is exposed to a first ultraviolet radiation pattern effective to increase a crosslinking density of the film matrix while maintaining a concentration of the porogen material substantially the same before and after exposure to the first ultraviolet radiation pattern. The low k dielectric film can be then be processed to form a metal interconnect structure therein and subsequently exposed to a second ultraviolet radiation pattern effective to remove the porogen material from the low k dielectrics film and form a porous low k dielectric film.
    Type: Application
    Filed: June 7, 2005
    Publication date: February 2, 2006
    Inventors: Carlo Waldfried, Qingyuan Han, Orlando Escorcia, Ivan Berry
  • Patent number: 6951823
    Abstract: A substantially oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is substantially free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to substantially oxygen and nitrogen free reactive species. The process can be used with carbon containing low k dielectric materials.
    Type: Grant
    Filed: August 11, 2003
    Date of Patent: October 4, 2005
    Assignee: Axcelis Technologies, Inc.
    Inventors: Carlo Waldfried, Orlando Escorcia, Qingyuan Han, Thomas Buckley, Palani Sakthivel
  • Patent number: 6913796
    Abstract: Low dielectric constant porous materials with improved elastic modulus and hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material to produce a plasma cured porous dielectric material. Plasma curing of the porous dielectric material yields a material with improved modulus and hardness. The improvement in elastic modulus is typically greater than or about 50%, more typically greater than or about 100%, and more typically greater than or about 200%. The improvement in hardness is typically greater than or about 50%. The plasma cured porous dielectric material can optionally be post-plasma treated. The post-plasma treatment of the plasma cured porous dielectric material reduces the dielectric constant of the material while maintaining an improved elastic modulus and hardness as compared to the plasma cured porous dielectric material.
    Type: Grant
    Filed: September 14, 2001
    Date of Patent: July 5, 2005
    Assignees: Axcelis Technologies, Inc., Dow Corning Corporation
    Inventors: Ralph Albano, Cory Bargeron, Ivan L. Berry, III, Jeff Bremmer, Phil Dembowski, Orlando Escorcia, Qingyuan Han, Nick Sbrockey, Carlo Waldfried
  • Publication number: 20040157170
    Abstract: A low temperature plasma ashing process for use with substrates comprising a ferroelectric material. The process generally includes plasma ashing the photoresist and residues at a temperature of about room temperature to about 140° C., wherein the plasma is generated from a gas mixture consisting essentially of hydrogen and an inert gas, and wherein the ferroelectric material is exposed to the plasma.
    Type: Application
    Filed: February 11, 2003
    Publication date: August 12, 2004
    Inventors: Carlo Waldfried, Qingyuan Han, Orlando Escorcia, Ebrahim Andideh
  • Patent number: 6759098
    Abstract: Low dielectric constant film materials with improved elastic modulus. The method of making such film materials involves providing a porous methyl silsesquioxane based dielectric film material produced from a resin molecule containing at least 2 Si—CH3 groups and plasma curing the porous film material to convert the film into porous silica. Plasma curing of the porous film material yields a film with improved modulus and outgassing properties. The improvement in elastic modulus is typically greater than or about 100%, and more typically greater than or about 200%. The plasma cured porous film material can optionally be annealed. The annealing of the plasma cured film may reduce the dielectric constant of the film while maintaining an improved elastic modulus as compared to the plasma cured porous film material. The annealed, plasma cured film has a dielectric constant between about 1.1 and about 2.4 and an improved elastic modulus.
    Type: Grant
    Filed: July 16, 2001
    Date of Patent: July 6, 2004
    Assignees: Axcelis Technologies, Inc., Chemat Technology, Inc.
    Inventors: Qingyuan Han, Carlo Waldfried, Orlando Escorcia, Ralph Albano, Ivan L. Berry, III, Jeff Jang, Ian Ball
  • Patent number: 6759133
    Abstract: Low dielectric constant films with improved elastic modulus. An SiO2-containing plasma treated coating is provided, the coating being formed by providing a porous network coating produced from a resin molecule containing at least 2 Si—H groups, curing the porous network coating by heating to a temperature sufficient to convert the porous network coating into a ceramic, and plasma treating the porous network coating to reduce an amount of Si—H bonds. Plasma treating the porous network coating provides a coating with improved modulus, but with a higher dielectric constant. Accordingly, the plasma treated coating can be annealed to provide an annealed, plasma treated coating having a lower dielectric constant and a comparable elastic modulus. The annealed, SiO2-containing plasma treated coating can have a dielectric constant between about 1.1 and about 3.5, and an elastic modulus greater than or about 4 GPa.
    Type: Grant
    Filed: April 14, 2003
    Date of Patent: July 6, 2004
    Assignee: Dow Corning Corporation
    Inventors: Ivan Louis Berry, III, Kyuha Chung, Qingyuan Han, Youfan Liu, Eric Scott Moyer, Michael John Spaulding
  • Patent number: 6756085
    Abstract: Low dielectric constant materials with improved elastic modulus and material hardness. The process of making such materials involves providing a dielectric material and ultraviolet (UV) curing the material to produce a UV cured dielectric material. UV curing yields a material with improved modulus and material hardness. The improvement is each typically greater than or about 50%. The UV cured dielectric material can optionally be post-UV treated. The post-UV treatment reduces the dielectric constant of the material while maintaining an improved elastic modulus and material hardness as compared to the UV cured dielectric material. UV cured dielectrics can additionally exhibit a lower total thermal budget for curing than for furnace curing processes.
    Type: Grant
    Filed: July 21, 2003
    Date of Patent: June 29, 2004
    Assignee: Axcelis Technologies, Inc.
    Inventors: Carlo Waldfried, Qingyuan Han, Orlando Escorcia, Ivan L. Berry, III
  • Publication number: 20040084412
    Abstract: A substantially oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is substantially free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to substantially oxygen and nitrogen free reactive species. The process can be used with carbon containing low k dielectric materials.
    Type: Application
    Filed: August 11, 2003
    Publication date: May 6, 2004
    Inventors: Carlo Waldfried, Orlando Escorcia, Qingyuan Han, Thomas Buckley, Palani Sakthivel
  • Publication number: 20040058090
    Abstract: A method of forming a coating on a substrate. A coating is formed on a substrate by depositing a solution comprising a resin molecule containing at least 2 Si—H groups, at least 2 Si—CH3 groups, or a combination thereof, and, a solvent in a manner in which at least about 5 volume % of the solvent remains in the coating after deposition, followed by exposing the coating to UV radiation at a power and wavelength spectrum sufficient to cause hydrolysis of the Si—H groups, Si—CH3 groups, or combination thereof, and at least partial condensation, and evaporating the solvent from the coating to form a porous network coating. The method enables production of low-k materials without treatment with ammonia.
    Type: Application
    Filed: July 21, 2003
    Publication date: March 25, 2004
    Inventors: Carlo Waldfried, Qingyuan Han, Orlando Escorcia, Ivan L. Berry, Jeff Bremmer, Phil Dembowski
  • Publication number: 20040028916
    Abstract: Low dielectric constant porous materials with improved elastic modulus and material hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and material hardness, and with comparable dielectric constant. The improvement in elastic modulus is typically greater than or about 50%, and more typically greater than or about 100%. The improvement in material hardness is typically greater than or about 50%. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure.
    Type: Application
    Filed: July 24, 2003
    Publication date: February 12, 2004
    Inventors: Carlo Waldfried, Qingyuan Han, Orlando Escorcia, Ralph Albano, Ivan L. Berry, Atsushi Shiota
  • Publication number: 20040018319
    Abstract: Low dielectric constant materials with improved elastic modulus and material hardness. The process of making such materials involves providing a dielectric material and ultraviolet (UV) curing the material to produce a UV cured dielectric material. UV curing yields a material with improved modulus and material hardness. The improvement is each typically greater than or about 50%. The UV cured dielectric material can optionally be post-UV treated. The post-UV treatment reduces the dielectric constant of the material while maintaining an improved elastic modulus and material hardness as compared to the UV cured dielectric material. UV cured dielectrics can additionally exhibit a lower total thermal budget for curing than for furnace curing processes.
    Type: Application
    Filed: July 21, 2003
    Publication date: January 29, 2004
    Inventors: Carlo Waldfried, Qingyuan Han, Orlando Escorcia, Ivan L. Berry
  • Publication number: 20030203217
    Abstract: Low dielectric constant films with improved elastic modulus. An SiO2-containing plasma treated coating is provided, the coating being formed by providing a porous network coating produced from a resin molecule containing at least 2 Si—H groups, curing the porous network coating by heating to a temperature sufficient to convert the porous network coating into a ceramic, and plasma treating the porous network coating to reduce an amount of Si—H bonds. Plasma treating the porous network coating provides a coating with improved modulus, but with a higher dielectric constant. Accordingly, the plasma treated coating can be annealed to provide an annealed, plasma treated coating having a lower dielectric constant and a comparable elastic modulus. The annealed, SiO2-containing plasma treated coating can have a dielectric constant between about 1.1 and about 3.5, and an elastic modulus greater than or about 4 GPa.
    Type: Application
    Filed: April 14, 2003
    Publication date: October 30, 2003
    Inventors: Ivan Louis Berry, Kyuha Chung, Qingyuan Han, Youfan Liu, Eric Scott Moyer, Michael John spaulding
  • Patent number: 6630406
    Abstract: An oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate. The process includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to the reactive species. The process can be used with carbon and/or hydrogen based low k dielectric materials.
    Type: Grant
    Filed: May 14, 2001
    Date of Patent: October 7, 2003
    Assignee: Axcelis Technologies
    Inventors: Carlo Waldfried, Ivan Berry, Orlando Escorcia, Qingyuan Han, Palani Sakthivel
  • Publication number: 20030175535
    Abstract: Low dielectric constant films with improved elastic modulus. An SiO2-containing plasma cured coating having a first dielectric constant and having a first elastic modulus is provided, the coating being formed by providing a porous network coating produced from a resin molecule containing at least 2 Si—H groups, and plasma curing the porous network coating to reduce an amount of Si—H bonds. Plasma curing of the network coating yields a coating with improved modulus, but with a higher dielectric constant. Accordingly, an SiO2-containing plasma cured coating is also provided, the coating being formed by annealing the plasma cured coating to produce an annealed, plasma cured coating having a second dielectric constant which is less than the first dielectric constant and having a second elastic modulus which is comparable to the first elastic modulus. The annealed, SiO2-containing plasma cured coating can have a dielectric constant between about 1.1 and about 3.
    Type: Application
    Filed: March 7, 2003
    Publication date: September 18, 2003
    Inventors: Ivan L. Berry, Todd Bridgewater, Wei Chen, Qingyuan Han, Eric S. Moyer, Michael J. Spaulding, Carlo Waldfried
  • Publication number: 20030157267
    Abstract: Low dielectric constant porous materials with improved elastic modulus and film hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and hardness, but with a higher dielectric constant. The improvement in elastic modulus is typically greater than or about 100%, and more typically greater than or about 200%. The improvement in film hardness is typically greater than or about 50%. The fluorine-free plasma cured porous dielectric material can optionally be post-plasma treated.
    Type: Application
    Filed: January 17, 2003
    Publication date: August 21, 2003
    Inventors: Carlo Waldfried, Qingyuan Han, Orlando Escorcia, Ralph Albano, Ivan L. Berry, Atsushi Shiota
  • Patent number: 6576300
    Abstract: Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si—H groups where the coating has been thermally cured and has a dielectric constant in the range of from about 1.1 to about 3.5, and plasma treating the coating to convert the coating into porous silica. Plasma treatment of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The coating is plasma treated for between about 15 and 120 seconds at a temperature less than or about 350° C. The plasma treated coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma treated coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the initial porous coating. The annealing temperature is preferably in excess of or about 350° C., and the annealing time is preferably at least or about 120 seconds.
    Type: Grant
    Filed: March 20, 2000
    Date of Patent: June 10, 2003
    Assignees: Dow Corning Corporation, Axcelis Technologies, Inc.
    Inventors: Ivan Louis Berry, III, Kyuha Chung, Qingyuan Han, Youfan Liu, Eric Scott Moyer, Michael John Spaulding