Patents by Inventor QINUO ZHANG

QINUO ZHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230059267
    Abstract: A runoff yield calculation method and device based on double free reservoirs, and a storage medium are provided, the method includes: forming a four-layer vadose zone structure by making a tension water storage layer be located under a deep vadose zone based on a three-layer vadose zone structure of a Xin'anjiang model; dividing a space occupied by free water in the four-layer vadose zone structure into an upper free reservoir and a lower free reservoir; calculating a time interval runoff yield by using a saturation excess runoff method; and dividing, based on a runoff yield structure of the double free reservoirs, the time interval runoff yield into a surface runoff, an interflow and a subsurface runoff. The method proposes a runoff yield structure of double free reservoirs, which can be well applied to semi-arid and semi humid watersheds with deeper buried depth of shallow groundwater.
    Type: Application
    Filed: July 29, 2022
    Publication date: February 23, 2023
    Inventors: KE ZHANG, XINYU CHEN, QINUO ZHANG, PENGNIAN HUANG