Abstract: The present invention discloses a glass ceramic for excitation of high-power semiconductor light source. An expression of constitution of the glass ceramic is (1?x)A: xB, wherein x as a weight percentage of B, is ranging from 1% to 30%; A as a precursor glass, has a composition of aSb2O3-bB2O3-cZnO-dM2O, a, b, c, d being molar percentages, a+b+c+d=100%, M among M2O represents an alkali metal, and M2O is an alkali metallic oxide or an alkali metallic carbonate; and B is a YAG:Ce3+ fluorescent powder. The precursor glass provided by the present invention has a relatively low remelting temperature, without devitrification during the process of preparing the final products or absorption of blue light. The product glass ceramic has a luminous efficiency of 300 lm/W to 400 lm/W. A white light semiconductor light source is prepared by the product glass ceramic in combination with the high-power blue light semiconductor light source.

Abstract: The present invention discloses a glass ceramic for excitation of high-power semiconductor light source. An expression of constitution of the glass ceramic is (1?x)A: xB, wherein x as a weight percentage of B, is ranging from 1% to 30%; A as a precursor glass, has a composition of aSb2O3-bB2O3-cZnO-dM2O, a, b, c, d being molar percentages, a+b+c+d=100%, M among M2O represents an alkali metal, and M2O is an alkali metallic oxide or an alkali metallic carbonate; and B is a YAG:Ce3+ fluorescent powder. The precursor glass provided by the present invention has a relatively low remelting temperature, without devitrification during the process of preparing the final products or absorption of blue light. The product glass ceramic has a luminous efficiency of 300 lm/W to 400 lm/W.