Patents by Inventor Qiquan Qiao

Qiquan Qiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11016118
    Abstract: A system for conductive atomic force microscopy measurements includes a function generator that drives a light source as well as current provided to a sample, designed sample holder for local charge dynamics measurements and output circuitry that includes both a frequency response analysis as well as a bypass circuit analysis portion. Bypass circuit with external preamplifier helped to overcome the obstacles of commercially available AFM circuit bandwidth (e.g. 100 kHz) to see the local characteristics with high temporal resolution. By obtaining the data output of the frequency response analyzer and the bypass circuitry, local mobility map, local carrier lifetime and transport time map, local carrier density map, and a nanoscale impedance map can be made of complex solid state devices at high temporal and spatial resolutions.
    Type: Grant
    Filed: November 23, 2018
    Date of Patent: May 25, 2021
    Assignee: SOUTH DAKOTA UNIVERSITY
    Inventors: Qiquan Qiao, Behzad Bahrami, Ashraful Haider Chowdhury
  • Publication number: 20200371135
    Abstract: A system for conductive atomic force microscopy measurements includes a function generator that drives a light source as well as current provided to a sample, designed sample holder for local charge dynamics measurements and output circuitry that includes both a frequency response analysis as well as a bypass circuit analysis portion. Bypass circuit with external preamplifier helped to overcome the obstacles of commercially available AFM circuit bandwidth (e.g. 100 kHz) to see the local characteristics with high temporal resolution. By obtaining the data output of the frequency response analyzer and the bypass circuitry, local mobility map, local carrier lifetime and transport time map, local carrier density map, and a nanoscale impedance map can be made of complex solid state devices at high temporal and spatial resolutions.
    Type: Application
    Filed: November 23, 2018
    Publication date: November 26, 2020
    Inventors: Qiquan QIAO, Behzad BAHRAMI, Ashraful Haider CHOWDHURY
  • Publication number: 20110079275
    Abstract: Composite electrode materials for DSSCs, DSSCs incorporating the composite electrode materials and methods for making the composite electrode materials are provided. The composite electrode materials are composed of semiconductor nanofibers embedded in a matrix of semiconductor nanoparticles. DSSCs incorporating the composite electrode materials exhibit both increased carrier transport and improved light harvesting, particularly at wavelengths of 600 nm or greater (e.g., 600 nm to 800 nm or greater).
    Type: Application
    Filed: October 2, 2010
    Publication date: April 7, 2011
    Inventors: Qiquan Qiao, Prakash Joshi, Hao Fong, David Galipeau, Lifeng Zhang