Patents by Inventor Qirui REN

Qirui REN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12107974
    Abstract: An encryption method includes: receiving cipher data which is binary data; determining target components in a resistive memory array according to values of respective bits in the cipher data; determining current values generated by respective columns of components according to the target components; and generating key data according to the current values generated by the respective columns of components. The present disclosure can effectively reduce computing power and power consumption of an encryption process in an edge device.
    Type: Grant
    Filed: April 19, 2021
    Date of Patent: October 1, 2024
    Assignee: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
    Inventors: Feng Zhang, Yiming Wang, Qirui Ren
  • Publication number: 20240305479
    Abstract: An encryption method includes: receiving cipher data which is binary data; determining target components in a resistive memory array according to values of respective bits in the cipher data; determining current values generated by respective columns of components according to the target components; and generating key data according to the current values generated by the respective columns of components. The present disclosure can effectively reduce computing power and power consumption of an encryption process in an edge device.
    Type: Application
    Filed: April 19, 2021
    Publication date: September 12, 2024
    Applicant: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
    Inventors: Feng ZHANG, Yiming WANG, Qirui REN
  • Patent number: 12002509
    Abstract: A data readout circuit of a RRAM includes: an adaptive current sense amplifier (CSA) and a reference current generator, the adaptive CSA is configured to electrically connect to the RRAM, and the adaptive CSA is electrically connected to the reference current generator; the reference current generator is configured to generate a basic reference current; the adaptive CSA is configured to obtain a reference current according to the basic reference current and a bit-line current of the RRAM; and the adaptive CSA is configured to compare the size of the reference current and that of the bit-line current so as to read out stored data. The present disclosure can improve the problem of data readout error due to the degradation of high resistance state of the RRAM.
    Type: Grant
    Filed: July 2, 2021
    Date of Patent: June 4, 2024
    Assignee: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
    Inventors: Feng Zhang, Qirui Ren
  • Publication number: 20240153554
    Abstract: The present disclosure discloses a data readout circuit of a RRAM and a RRAM circuit. The data readout circuit of the RRAM comprises: an adaptive current sense amplifier (CSA) and a reference current generator, the adaptive CSA is configured to electrically connect to the RRAM, and the adaptive CSA is electrically connected to the reference current generator; the reference current generator is configured to generate a basic reference current; the adaptive CSA is configured to obtain a reference current according to the basic reference current and a bit-line current of the RRAM; and the adaptive CSA is configured to compare the size of the reference current and that of the bit-line current so as to read out stored data. The present disclosure can improve the problem of data readout error due to the degradation of high resistance state of the RRAM.
    Type: Application
    Filed: July 2, 2021
    Publication date: May 9, 2024
    Applicant: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
    Inventors: Feng ZHANG, Qirui REN
  • Publication number: 20220244872
    Abstract: The present disclosure discloses a storage method, a data processing method, a device and an apparatus based on a non-volatile memory, the method comprising: acquiring a weight value that needs to be stored in the non-volatile memory; determining a conductivity value corresponding to the weight value according to a first conversion method if the non-volatile memory is a high-resistance storage device; determining a conductivity value corresponding to the weight value according to a second conversion method which is different from the first conversion method if the non-volatile memory is a low-resistance memory device; and setting the non-volatile memory according to the conductivity value to store the weight value.
    Type: Application
    Filed: April 22, 2021
    Publication date: August 4, 2022
    Applicant: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
    Inventors: Feng ZHANG, Qiang HUO, Zhisheng CHEN, Qirui REN