Abstract: In one embodiment of the present invention, an electron/photon source is disclosed based on field emission, cathodoluminescent and photo-enhanced field emission, including an evacuated chamber inside a housing, further including an anode and a cathode arranged inside the evacuated chamber. Furthermore, the cathode is arranged to emit electrons when a voltage is applied between the anode and cathode, the anode being arranged to emit light at a first wavelength range when receiving electrons emitted from the cathode, and a wavelength range converting material arranged to receive the emitted light of the first wavelength range and emit light at a second wavelength range. In a novel way, an embodiment of the present invention makes it possible to, in two steps, convert the electrons emitted from the cathode to visible light.

Abstract: The present invention relates to a light emitting diode (100, 109), comprising at least one p-doped structure, a plurality of n-doped zinc-oxide (ZnO) nanowires (104) arranged on the at least one p-doped structure, thereby forming a plurality of p-n junctions (107a, 107b), an insulating structure (105) arranged among the plurality of ZnO-nanowires (104), to electrically separate the plurality of p-n junctions (107a, 107b), and a transparent conductive layer (106), arranged on the at least one insulating structure (105) and in electrical contact with the plurality of ZnO-nanowires (104), to enable application of a voltage over the plurality of p-n junctions (107a, 107b), thereby enabling emission of light. An advantage with the above light emitting diode (100, 109) is its improved broadband spectral distribution. Furthermore, as ZnO-nanowires (104) are used, it is possible to achieve a high brightness.

Abstract: The present invention relates to an evaporation system comprising a vacuum chamber, a crucible for receiving an evaporation material, a substrate holder for receiving a substrate, and an electron beam source for heating the evaporation material to be deposited on the substrate, wherein the electron beam source together with the crucible and the substrate holder are arranged inside of the vacuum chamber, the electron beam source is a field emission electron beam source, and the evaporation system further comprises a control unit for controlling the direction of electrons emitted by the field emission electron beam source such that the emitted electrons heat the evaporation material such that it evaporates.

Abstract: The present invention relates to a method for the manufacturing of a field-emission display (300), comprising the steps of arranging an electron-emission receptor (302) in an evacuated chamber, arranging a wavelength converting material (304) in the vicinity of the electron-emission receptor, and arranging an electron-emission source (100) in the evacuated chamber, the electron-emission source adapted to emit electrons towards the electron-emission receptor, wherein the electron-emission source is formed by providing a substrate, forming a plurality of ZnO-nanostructures on the substrate, wherein the ZnO-nanostructures each have a first end and a second end, and the first end is connected to the substrate, arranging an electrical insulation to electrically insulate the ZnO-nanostructures from each other, connecting an electrical conductive member to the second end of a selection of the ZnO-nanostructures, arranging a support structure onto of the electrical conductive member, and removing the substrate, there

Abstract: The present invention relates to a light emitting diode (100, 109), comprising at least one p-doped structure, a plurality of n-doped zinc-oxide (ZnO) nanowires (104) arranged on the at least one p-doped structure, thereby forming a plurality of p-n junctions (107a, 107b), an insulating structure (105) arranged among the plurality of ZnO-nanowires (104), to electrically separate the plurality of p-n junctions (107a, 107b), and a transparent conductive layer (106), arranged on the at least one insulating structure (105) and in electrical contact with the plurality of ZnO-nanowires (104), to enable application of a voltage over the plurality of p-n junctions (107a, 107b), thereby enabling emission of light. An advantage with the above light emitting diode (100, 109) is its improved broadband spectral distribution. Furthermore, as ZnO-nanowires (104) are used, it is possible to achieve a high brightness.

Abstract: A method for manufacturing a field emission cathode comprising the steps of providing a liquid compound comprising a liquid phenolic resin and at least one of a metal salt and a metal oxide, arranging a conductive cathode support (2) such that said conductive cathode support comes in a vicinity of said liquid compound (2) and heating said liquid compound (2). By performing the above mentioned steps, a solid compound foam is formed which is transformed from said liquid compound, said solid compound foam at least partly covering said conductive cathode support. Advantage with the novel compound comprises its improved work function and the minimal or non-existing training period. Hence, this novel method will provide the possibility to manufacture a field emission cathode at a fraction of the cost associated with the in prior art used methods and materials.

Abstract: In one embodiment of the present invention, an electron/photon source is disclosed based on field emission, cathodoluminescent and photo-enhanced field emission, including an evacuated chamber inside a housing, further including an anode and a cathode arranged inside the evacuated chamber. Furthermore, the cathode is arranged to emit electrons when a voltage is applied between the anode and cathode, the anode being arranged to emit light at a first wavelength range when receiving electrons emitted from the cathode, and a wavelength range converting material arranged to receive the emitted light of the first wavelength range and emit light at a second wavelength range. In a novel way, an embodiment of the present invention makes it possible to, in two steps, convert the electrons emitted from the cathode to visible light.

Abstract: A method for manufacturing a piezoelectric thin film component wherein a thin titanium film is deposited on a bottom metal layer such that parts of the thin titanium film remain on crystal grain boundaries of the bottom metal layer and form seed crystals. A polycrystalline piezoelectric thin film is formed on the bottom metal layer so that a pervoskite crystalline lattice is grown from the seed crystals.

Abstract: [Object]

Abstract: A method of manufacturing a piezoelectric thin film component utilizing seed crystals, such as crystals of titanium, as a crystal source on a bottom electrode. Crystals of piezoelectric material are grown using the seed crystals as a nucleus, wherein a crystal grain size and orientation of the piezoelectric material formed on the crystal source may be of a different orientation and crystal grain size from that of the bottom electrode. The piezoelectric thin film formed by this operation is of a polycrystalline structure. The formation of the piezoelectric thin film by this method includes a sol-gel film formation process utilizing a sol composition having an high molecular organic compound which creates a porous gel thin film. Further, the formation of the piezoelectric thin film by this method may include a metal organic decomposition process utilizing a hydrolysis inhibitor in the sol solution.

Abstract: A method for manufacturing a piezoelectric film element with increased durability is disclosed. The method of manufacturing the piezoelectric film element includes the steps of thermally treating a first film, and thermally treating a second film formed over the first film; whereby a dislocation layer is formed in the second film in a vicinity of an interface between the first film and the second film. Additionally, an ink-jet recording head including a pressure room substrate, a pressure room, and a piezoelectric film element is disclosed. The method of manufacturing the ink-jet recording head includes the steps of forming a pressure room in a pressure room substrate and manufacturing a piezoelectric film element at a position which makes it possible to press the pressure room.

Abstract: Providing a mechanism which can eliminate an influence of residual strain in a piezoelectric thin film, having excellent piezoelectric strain characteristics. No or few foreign substances exist or an abundance of foreign substances is low at grain boundaries, which are boundaries between crystal grains of the piezoelectric thin film, even after performing polarization processing (poling) on the piezoelectric thin film component. The width of the grain boundary is 5 nm or less. The crystal grain boundary is a discontinuous layer which does not continue the orientation of adjacent crystal grains.

Abstract: It is an object of this invention to provide a piezoelectric film element which has structural characteristics capable of preventing the generation of cracks in the steps of manufacturing the piezoelectric film element and of increasing the thickness of a piezoelectric film. The piezoelectric film element of this invention comprises a dislocation layer in the piezoelectric film. This “dislocation layer” is the layer of which atoms in crystals are partly defective, which is caused by lattice defects. In the step of forming the piezoelectric film, when a sol which is a piezoelectric film precursor is turned into a gel by means of thermal treatment and when crystal grains of the sol grow, a lattice arrangement over the surfaces of the crystal grains is disturbed moderately. Accordingly, when the piezoelectric film is formed over the gel, the dislocation layer can be formed in the piezoelectric film.

Abstract: Providing a mechanism which can eliminate an influence of residual strain in a piezoelectric thin film, having excellent piezoelectric strain characteristics.

Abstract: A piezoelectric film element with structural characteristics such that cracks are not generated in the manufacturing of the piezoelectric film and a thicker piezoelectric film is possible without such cracks. The piezoelectric film element includes a dislocation layer, that is, a layer in which atoms in the crystals are partly defective, which is caused by lattice defects. In the process for forming the piezoelectric film, when a sol is turned into a gel by thermal treatment and when crystal grains of the sol grow, a lattice arrangement over the surfaces of the crystal grains is disturbed moderately. Accordingly, when the piezoelectric film is formed over the gel, the dislocation layer is formed in the piezoelectric film.

Abstract: Providing a mechanism which can eliminate an influence of residual strain in a piezoelectric thin film, having excellent piezoelectric strain characteristics. No or few foreign substances exist or an abundance of foreign substances is low at grain boundaries, which are boundaries between crystal grains of the piezoelectric thin film, even after performing polarization processing (poling) on the piezoelectric thin film component. The width of the grain boundary is 5 nm or less. The crystal grain boundary is a discontinuous layer which does not continue the orientation of adjacent crystal grains.