Patents by Inventor Qiu-Ji Zhao

Qiu-Ji Zhao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20160322372
    Abstract: A semiconductor device includes a substrate, a plurality of memory cells, a logic gate electrode and a high-voltage gate electrode. The substrate at least includes a memory area, a high-voltage area and a logic area. The memory cells are disposed in the memory area. The logic gate electrode is disposed on the logic area. The high-voltage gate electrode has a first portion and a second portion in contact with each other and stacked on the high-voltage area. The high-voltage gate electrode has a thickness substantially greater than that of the logic gate electrode.
    Type: Application
    Filed: June 1, 2015
    Publication date: November 3, 2016
    Inventors: Qiu-Ji Zhao, Ling Wu, Wei Meng, Zhi-Hui Jiao, Zhi-Guo Li, Chi Ren
  • Semiconductor device and method for fabricating the same
    Patent number: 9472562
    Abstract: A semiconductor device includes a substrate, a plurality of memory cells, a logic gate electrode and a high-voltage gate electrode. The substrate at least includes a memory area, a high-voltage area and a logic area. The memory cells are disposed in the memory area. The logic gate electrode is disposed on the logic area. The high-voltage gate electrode has a first portion and a second portion in contact with each other and stacked on the high-voltage area. The high-voltage gate electrode has a thickness substantially greater than that of the logic gate electrode.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: October 18, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Qiu-Ji Zhao, Ling Wu, Wei Meng, Zhi-Hui Jiao, Zhi-Guo Li, Chi Ren