Abstract: The present disclosure provides a thin-film transistor having a plurality of carbon nanotubes in its active layer, its manufacturing method, and an array substrate. The manufacturing method as such comprises: forming an insulating layer to at least substantially cover a channel region of the active layer between a source electrode and a drain electrode of the thin-film transistor, wherein the insulating layer is configured to substantially insulate from an environment, and have substantially little influence on, the plurality of carbon nanotubes in the active layer.

Abstract: The present disclosure provides a carbon nanotube thin film transistor (CNT-TFT) and its manufacturing method. The carbon nanotube thin film transistor includes a source electrode, a drain electrode, a channel region, a plurality of protrusions, and a carbon nanotube layer. The channel region is between the source electrode and the drain electrode. The plurality of protrusions are at, and extend in a length direction of, the channel region. The carbon nanotube layer is disposed over the plurality of protrusions, and comprises a plurality of carbon nanotubes.

Abstract: The present disclosure provides a thin-film transistor having a plurality of carbon nanotubes in its active layer, its manufacturing method, and an array substrate. The manufacturing method as such comprises: forming an insulating layer to at least substantially cover a channel region of the active layer between a source electrode and a drain electrode of the thin-film transistor, wherein the insulating layer is configured to substantially insulate from an environment, and have substantially little influence on, the plurality of carbon nanotubes in the active layer.

Abstract: The present disclosure provides a carbon nanotube thin film transistor (CNT-TFT) and its manufacturing method. The carbon nanotube thin film transistor includes a source electrode, a drain electrode, a channel region, a plurality of protrusions, and a carbon nanotube layer. The channel region is between the source electrode and the drain electrode. The plurality of protrusions are at, and extend in a length direction of, the channel region. The carbon nanotube layer is disposed over the plurality of protrusions, and comprises a plurality of carbon nanotubes.

Abstract: The present disclosure pertains to the field of carbon nanotube technologies, and provides a carbon nanotube semiconductor device and a manufacturing method thereof. The manufacturing method of a carbon nanotube semiconductor device provided in the present disclosure comprises: forming a carbon nanotube layer with a carbon nanotube solution; and treating the carbon nanotube layer with an acidic solution. The carbon nanotube semiconductor device manufactured by the method of the present disclosure has good performance uniformity.