Abstract: Provided herein is an electrically conductive composition capable of sintering. More particularly, the electrically conductive composition comprises sinterable silver particles dispersed in a binder resin, which binder resin is not yet in a fully cured state when the composition is heated to a temperature at which the silver particles start to sinter.

Abstract: Provided herein are sinterable films and pastes as conductive die attach materials having advantageous properties for use in die semiconductor packages. Also provided are formulations useful for the preparation of such films and pastes, as well as methods for making such formulations. In additional aspects of the present invention, there are provided conductive networks prepared from compositions according to the present invention. In certain aspects, the invention relates to articles comprising such sintering films and pastes adhered to a suitable substrate therefor.

Abstract: Provided herein are sinterable films and pastes as conductive die attach materials having advantageous properties for use in die semiconductor packages. Also provided are formulations useful for the preparation of such films and pastes, as well as methods for making such formulations. In additional aspects of the present invention, there are provided conductive networks prepared from compositions according to the present invention. In certain aspects, the invention relates to articles comprising such sintering films and pastes adhered to a suitable substrate therefor.

Abstract: A method for shielding a system-in-package (SIP) assembly from electromagnetic interference (EMI) includes laminating a pre-form EMI shielding film onto the assembly in a single lamination process. The EMI shielding film may be moldable in a vacuum lamination process to cover the SIP assembly and to substantially fill trenches formed in the assembly between adjacent component modules. The SIP assembly is accordingly shielded from EMI through the application of a single EMI shielding film.

Abstract: Provided herein are conductive formulations which are useful for applying conductive material to a suitable substrate; the resulting coated articles have improved EMI shielding performance relative to articles coated with prior art formulations employing prior art methods. In accordance with certain aspects of the present invention, there are also provided methods for filling a gap in an electronic package to achieve electromagnetic interference (EMI) shielding thereof, as well as the resulting articles shielded thereby. Specifically, invention methods utilize capillary flow to substantially fill any gaps in the coating on the surface of an electronic package. Effective EMI shielding has been demonstrated with very thin coating thickness.

Abstract: A method for shielding a system-in-package (SIP) assembly from electromagnetic interference (EMI) includes laminating a pre-form EMI shielding film onto the assembly in a single lamination process. The EMI shielding film may be moldable in a vacuum lamination process to cover the SIP assembly and to substantially fill trenches formed in the assembly between adjacent component modules. The SIP assembly is accordingly shielded from EMI through the application of a single EMI shielding film.

Abstract: Provided herein are conductive formulations which are useful for applying conductive material to a suitable substrate; the resulting coated articles have improved EMI shielding performance relative to articles coated with prior art formulations employing prior art methods. In accordance with certain aspects of the present invention, there are also provided methods for filling a gap in an electronic package to achieve electromagnetic interference (EMI) shielding thereof, as well as the resulting articles shielded thereby. Specifically, invention methods utilize capillary flow to substantially fill any gaps in the coating on the surface of an electronic package. Effective EMI shielding has been demonstrated with very thin coating thickness.

Abstract: Provided herein are highly conductive compositions (having a volume resistivity no greater than 1×10?3 Ohms·cm) using silver flake, powder or suspension in solvent for electromagnetic interference (EMI) applications. This high conductivity will allow the use of very thin films for EMI shielding protection, which in turn will be helpful to reduce package sizes. In some embodiments, the coating composition is applied on the device surface by suitable means, e.g., by an electrostatic spray process, air spray process, ultrasonic spray process, spin coating process, or the like.

Abstract: A method for shielding a system-in-package (SIP) assembly from electromagnetic interference (EMI) includes laminating a pre-form EMI shielding film onto the assembly in a single lamination process. The EMI shielding film may be moldable in a vacuum lamination process to cover the SIP assembly and to substantially fill trenches formed in the assembly between adjacent component modules. The SIP assembly is accordingly shielded from EMI through the application of a single EMI shielding film.

Abstract: Provided herein are conductive formulations wherein graphene has been added into the metal system, thereby reducing curing shrinkage and improving flexibility, without significantly affecting the EMI shielding performance thereof. In accordance with certain aspects of the present invention, there are also provided methods for filling a gap in an electronic package to achieve electromagnetic interference (EMI) shielding thereof, as well as the resulting articles shielded thereby. In certain aspects of the present invention, there are also provided articles prepared using invention formulations and methods.

Abstract: A method for shielding a system-in-package (SIP) assembly from electromagnetic interference (EMI) includes laminating a pre-form EMI shielding film onto the assembly in a single lamination process. The EMI shielding film may be moldable in a vacuum lamination process to cover the SIP assembly and to substantially fill trenches formed in the assembly between adjacent component modules. The SIP assembly is accordingly shielded from EMI through the application of a single EMI shielding film.

Abstract: Provided herein are conductive formulations wherein graphene has been added into the metal system, thereby reducing curing shrinkage and improving flexibility, without significantly affecting the EMI shielding performance thereof. In accordance with certain aspects of the present invention, there are also provided methods for filling a gap in an electronic package to achieve electromagnetic interference (EMI) shielding thereof, as well as the resulting articles shielded thereby. In certain aspects of the present invention, there are also provided articles prepared using invention formulations and methods.

Abstract: Provided herein are conductive formulations which are useful for applying conductive material to a suitable substrate; the resulting coated articles have improved EMI shielding performance relative to articles coated with prior art formulations employing prior art methods. In accordance with certain aspects of the present invention, there are also provided methods for filling a gap in an electronic package to achieve electromagnetic interference (EMI) shielding thereof, as well as the resulting articles shielded thereby. Specifically, invention methods utilize capillary flow to substantially fill any gaps in the coating on the surface of an electronic package. Effective EMI shielding has been demonstrated with very thin coating thickness.

Abstract: Provided herein are sinterable films and pastes as conductive die attach materials having advantageous properties for use in die semiconductor packages. Also provided are formulations useful for the preparation of such films and pastes, as well as methods for making such formulations. In additional aspects of the present invention, there are provided conductive networks prepared from compositions according to the present invention. In certain aspects, the invention relates to articles comprising such sintering films and pastes adhered to a suitable substrate therefor.

Abstract: A semiconductor assembly comprises a semiconductor wafer, an adhesive coating disposed on the back side of the wafer, and a bare dicing tape, preferably UV radiation transparent. The assembly is prepared by the method comprising (a) providing a semiconductor wafer, (b) disposing a wafer back side coating on the semiconductor wafer, (c) partially curing the wafer back side coating to the extent that it adheres to the back side of the wafer and remains tacky, and (d) contacting the bare dicing tape to the partially cured and tacky wafer back side coating, optionally with heat and pressure.

Abstract: A semiconductor assembly comprises a semiconductor wafer, an adhesive coating disposed on the back side of the wafer, and a bare dicing tape, preferably UV radiation transparent. The assembly is prepared by the method comprising (a) providing a semiconductor wafer, (b) disposing a wafer back side coating on the semiconductor wafer, (c) partially curing the wafer back side coating to the extent that it adheres to the back side of the wafer and remains tacky, and (d) contacting the bare dicing tape to the partially cured and tacky wafer back side coating, optionally with heat and pressure.

Abstract: An adhesive composition comprising elastomeric polymer, epoxy resin, reactive diluent, and filler, is suitable for use within the electronics industry, and in particular for wafer back side coating adhesives. The elastomeric polymer is a mixture of a vinyl elastomer and an epoxy elastomer; the reactive diluent is a combination of two or more diluents, one of which must have carbon to carbon unsaturation, providing cross-linking within the composition after cure; and the filler is a non-conductive filler.

Abstract: A conductive composition for coating a semiconductor wafer comprises conductive filler that has an average particle size of less than 2 microns and a maximum particle size of less than 10 microns, a first resin that has a softening point between 80-260° C., solvent, curing agent, and a second resin, wherein at room temperature the first resin is substantially soluble in the solvent.

Abstract: A conductive composition for coating a semiconductor wafer comprises conductive filler that has an average particle size of less than 2 microns and a maximum particle size of less than 10 microns, a first resin that has a softening point between 80-260° C., solvent, curing agent, and a second resin, wherein at room temperature the first resin is substantially soluble in the solvent.

Abstract: A conductive composition for coating a semiconductor wafer comprises conductive filler that has an average particle size of less than 2 microns and a maximum particle size of less than 10 microns, a first resin that has a softening point between 80-260 ° C., solvent, curing agent, and a second resin, wherein at room temperature the first resin is substantially soluble in the solvent.