Abstract: A data node apparatus, a peer information acquisition method and a system are provided. An apparatus that serves as a data node in peer-to-peer (P2P) data exchange, comprising: a data node application unit that issues a peer list request and carries out data exchange with peers; and a list processing unit that intercepts an original peer list provided by an indexing server in response to the peer list request, issues a peer location request to an information server and receives peer location information provided by the information server in response to the peer location request, performs a processing on the original peer list based on the peer location information to derive a processed peer list, and provides the processed peer list to the data node application unit.

Abstract: A speaker having a voice coil is disclosed. The voice coil includes two parallel main members and two linking members connecting the two main members for forming a closed loop, one of the linking member having at least a first part from a first circle having a first diameter, and at least a second part from a second circle having a second diameter greater than the first diameter.

Abstract: An indexing server of a P2P network and a method therefor are provided. The indexing server comprises: a metadata storage unit, which stores one or more entries, each of which is associated with a data file and includes a plurality of information items each indicating a node offering the data file and a location of the node; and a node information managing unit, which monitors the metadata storage unit to identify an entry stored in the metadata storage unit in which the number of information items exceeds a threshold, and transfers a portion of the information items included in the identified entry to another server, the transferred portion including as many as possible such information items that indicate nodes whose locations are close to each other.

Abstract: The invention relates to a hydrophobic, integrally asymmetrical hollow-fiber membrane made of a vinylidene fluoride homopolymer or copolymer, wherein the wall of said membrane has a microporous supporting layer having a sponge-like, open-pored, essentially isotropic pore structure without finger pores, said supporting layer extending across at least 90% of the wall thickness and having pores with an average diameter of less than 0.5 ?m. The hollow-fiber membrane is characterized in that it has a separating layer adjacent to the supporting layer on its outer surface and that it has an outer surface with a homogeneous, uniform structure without pores, a porosity in the range from 40 to 80 vol. %, a wall thickness from 25 to 100 ?m, a diameter of the lumen of the hollow-fiber membrane from 100 to 500 ?m, a permeability for nitrogen of at least 25 ml/(cm2·min·bar), and an elongation at break of at least 250%. The invention further relates to a method for producing hollow-fiber membranes of this type.

Abstract: An embedded metal heat sink for a semiconductor device is described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.

Abstract: A method used for radio measurement in a communication network is provided. The communication network comprises multiple basic service sets controlled by a core network controller. The method comprises the steps of: the core network controller issuing a measurement request to a communication node working on a service channel; the communication node switching to a non-service channel based on the measurement request; the communication node broadcasting a measurement beacon in the non-service channel and returning to the service channel immediately after the broadcasting; a node in the non-service channel receiving the measurement beacon; and based on the measurement beacon, calculating the received signal strength indicator (RSSI) from the communication node to the node in the non-service channel.

Abstract: A direct methanol fuel cell has a proton conducting membrane (PCM), a catalyst in contact with the PCM, a gas diffusion layer in contact with the catalyst, and a conducting plate in contact with the gas diffusion membrane. The gas diffusion layer comprises a microporous membrane. The microporous membrane may be a microporous membrane, a laminate of a microporous membrane, and a skinned microporous membrane.

Abstract: An embedded metal heat sink for a semiconductor device and a method for manufacturing the same are described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.

Abstract: An embedded metal heat sink for a semiconductor device is described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.

Abstract: Method for producing foamed microporous polymer molded bodies by melting a thermoplastic polymer in a first zone of an extrusion device, mixing in a highly volatile blowing agent, conveying the polymer melt containing the blowing agent into a second zone in which dissolution of the blowing agent occurs to saturation of the polymer melt at the foaming temperature, and molding and foaming of the loaded polymer melt to a foamed structure, whereby, in the second zone, a pressure above 90 bar, a blowing agent concentration above the critical minimum concentration for complete foaming, and the foaming temperature, lying above the solidification temperature of the polymer melt saturated with blowing agent, are set such that the polymer molded body obtained has a porosity in the range between 40 and 90 vol. % and an open-cell pore structure with uniform cross-sectional distribution.

Abstract: Method for producing foamed microporous polymer molded bodies by melting a thermoplastic polymer in a first zone of an extrusion device, mixing in a highly volatile blowing agent, conveying the polymer melt containing the blowing agent into a second zone in which dissolution of the blowing agent occurs to saturation of the polymer melt at the foaming temperature, and molding and foaming of the loaded polymer melt to a foamed structure, whereby, in the second zone, a pressure above 90 bar, a blowing agent concentration above the critical minimum concentration for complete foaming, and the foaming temperature, lying above the solidification temperature of the polymer melt saturated with blowing agent, are set such that the polymer molded body obtained has a porosity in the range between 40 and 90 vol. % and an open-cell pore structure with uniform cross-sectional distribution.

Abstract: A method for manufacturing a heat sink of a semiconductor device is described. In the method, an adhesive tape is provided, wherein the adhesive tape includes a first surface and a second surface on opposite sides, and the first surface of the adhesive tape adheres to a surface of a temporary substrate. At least one semiconductor device is provided, wherein the semiconductor device includes a first side and a second side opposite to the first side, and the first side of the one semiconductor device is pressed and set into a portion of the second surface of the adhesive tape, and the second side of the one semiconductor device is exposed. A thin metal layer is formed on the second side of the semiconductor device and the exposed portion of the second surface of the adhesive tape. A metal heat sink is formed on the thin metal layer. Then, the adhesive tape and the temporary substrate are removed.

Abstract: A method for manufacturing a heat sink of a semiconductor device is described. In the method, an adhesive tape is provided, wherein the adhesive tape includes a first surface and a second surface on opposite sides, and the first surface of the adhesive tape adheres to a surface of a temporary substrate. At least one semiconductor device is provided, wherein the semiconductor device includes a first side and a second side opposite to the first side, and the first side of the one semiconductor device is pressed and set into a portion of the second surface of the adhesive tape, and the second side of the one semiconductor device is exposed. A thin metal layer is formed on the second side of the semiconductor device and the exposed portion of the second surface of the adhesive tape. A metal heat sink is formed on the thin metal layer. Then, the adhesive tape and the temporary substrate are removed.

Abstract: An auto-adjusting high accuracy oscillator is disclosed, which comprises: a frequency comparator, for comparing a synchronization signal obtained from a USB host with an oscillation signal obtain from a device; a control tuning circuit, further comprising a counter and an adder/sub circuit; and an oscillating element; wherein a variation is obtained by the counting of the counter while transmitting the variation to the adder/sub circuit to be encoded thereby into a digital code so as to enable the oscillating element to perform a frequency up/down operation accordingly for approaching the synchronization signal successively.

Abstract: An auto-adjusting high accuracy oscillator is disclosed, which comprises: a frequency comparator, for comparing a synchronization signal obtained from a USB host with an oscillation signal obtain from a device; a control tuning circuit, further comprising a counter and an adder/sub circuit; and an oscillating element; wherein a variation is obtained by the counting of the counter while transmitting the variation to the adder/sub circuit to be encoded thereby into a digital code so as to enable the oscillating element to perform a frequency up/down operation accordingly for approaching the synchronization signal successively.

Abstract: An embedded metal heat sink for a semiconductor device and a method for manufacturing the same are described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.

Abstract: A light-emitting device and a process for manufacturing the same are described. The light-emitting device comprises: a thin metal layer including a first surface and a second surface on opposite sides; a metal heat sink directly formed and closely connected to the second surface of the thin metal layer; and a light-emitting chip deposed on a portion of the first surface of the thin metal layer, wherein the thin metal layer directly contacts and is closely connected with the light-emitting chip.

Abstract: An auto-adjusting high accuracy oscillator is disclosed, which comprises: a frequency comparator, for comparing a synchronization signal obtained from a USB host with an oscillation signal obtain from a device; a control tuning circuit, further comprising a counter and an adder/sub circuit; and an oscillating element; wherein a variation is obtained by the counting of the counter while transmitting the variation to the adder/sub circuit to be encoded thereby into a digital code so as to enable the oscillating element to perform a frequency up/down operation accordingly for approaching the synchronization signal successively.

Abstract: A direct methanol fuel cell has a proton conducting membrane (PCM), a catalyst in contact with the PCM, a gas diffusion layer in contact with the catalyst, and a conducting plate in contact with the gas diffusion membrane. The gas diffusion layer comprises a microporous membrane. The microporous membrane may be a microporous membrane, a laminate of a microporous membrane, and a skinned microporous membrane.

Abstract: Method for producing foamed microporous polymer molded bodies by melting a thermoplastic polymer in a first zone of an extrusion device, mixing in a highly volatile blowing agent, conveying the polymer melt containing the blowing agent into a second zone in which dissolution of the blowing agent occurs to saturation of the polymer melt at the foaming temperature, and molding and foaming of the loaded polymer melt to a foamed structure, whereby, in the second zone, a pressure above 90 bar, a blowing agent concentration above the critical minimum concentration for complete foaming, and the foaming temperature, lying above the solidification temperature of the polymer melt saturated with blowing agent, are set such that the polymer molded body obtained has a porosity in the range between 40 and 90 vol. % and an open-cell pore structure with uniform cross-sectional distribution.