Patents by Inventor Quan WangXiao

Quan WangXiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110062497
    Abstract: A semiconductor device with a strain layer and a method of fabricating the semiconductor device with a strain layer that can reduce a loading effect are provided. By arranging active dummies and gate dummies not to overlap each other, the area of active dummy on which a strain layer dummy will be formed can be secured, thereby reducing the loading effect.
    Type: Application
    Filed: November 22, 2010
    Publication date: March 17, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung-hwan Lee, Heon-jong Shin, Shigenobu Maeda, Sung-rey Wi, Quan WangXiao, Hyun-min Choi
  • Patent number: 7863152
    Abstract: A semiconductor device with a strain layer and a method of fabricating the semiconductor device with a strain layer that can reduce a loading effect are provided. By arranging active dummies and gate dummies not to overlap each other, the area of active dummy on which a strain layer dummy will be formed can be secured, thereby reducing the loading effect.
    Type: Grant
    Filed: February 26, 2008
    Date of Patent: January 4, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-hwan Lee, Heon-jong Shin, Shigenobu Maeda, Sung-rey Wi, Quan WangXiao, Hyun-min Choi
  • Publication number: 20080216041
    Abstract: Provided is an integrated circuit (IC) simulation method which can predict the operation and performance of an IC considering stress effects that affect the characteristics of unit devices included in the IC. The method includes drawing out a first net list of unit devices included in a designed IC; preparing a layout of the designed IC; extracting a stress parameter from the layout of the designed IC; and drawing out a second net list of the first net list and the stress parameter.
    Type: Application
    Filed: January 25, 2008
    Publication date: September 4, 2008
    Inventors: Quan Wangxiao, Shigenobu Maeda