Abstract: A mouse device includes a casing, a scroll wheel, a circuit board, an encoder and a microprocessor. The scroll wheel is partially exposed outside the casing. The circuit board is disposed within the casing. The encoder is disposed within the casing. The encoder issues an encoded signal to the circuit board in response to a rotation of the scroll wheel. The microprocessor is electrically connected with the circuit board, and acquires a rotating time period corresponding to one-unit rotation amount of the scroll wheel. If the rotating time period is shorter than a predetermined time period, the microprocessor generates a first control command. If the rotating time period is longer than or equal to the predetermined time, the microprocessor generates a second control command.

Abstract: An electric iron (1) includes a housing (11) and a handle (12) connected to the housing (11). The electric iron (1) further includes an exhaust hole (15) or a second exhaust pipe (18) disposed on the housing (11) and a first exhaust pipe (16) or a third exhaust pipe (19) disposed on the handle (12). A soldering device includes an air extractor (2) and the electric iron (1) as described above.

Abstract: The present disclosure provides an electric iron (1) and a soldering device. By providing a first gas conveying device (15, 18) on a housing (11) of the electric iron (1) and providing a second gas conveying device (16, 19) connected to the first gas conveying device (15, 18) on a handle (12), it is possible to utilize negative pressure within the first gas conveying device (15, 18) and the second gas conveying device (16, 19) to suck in the smog produced during soldering at an end of the first gas conveying device (15, 18) far away from the second gas conveying device (16, 19), and to discharge the smog from the second gas conveying device (16, 19).

Abstract: One embodiment of the present invention is a method for fabricating a low-k dielectric film that included steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.