Patents by Inventor Quan-Yang Shang

Quan-Yang Shang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030189208
    Abstract: A method of silicon layer deposition using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a silicon-containing precursor and a reducing gas on a substrate structure. Thin film transistors, such as for example a bottom-gate transistor or a top-gate transistor, including one or more silicon layers may, be formed using such cyclical deposition techniques.
    Type: Application
    Filed: April 5, 2002
    Publication date: October 9, 2003
    Inventors: Kam Law, Quan-Yang Shang, William Reid Harshbarger, Dan Maydan