Abstract: The present disclosure generally relates to topological insulator (TI) based or topological semi-metal (TSM) based spin-orbit torque (SOT) devices. The SOT device comprises a buffer layer, a first migration barrier layer, a TI or TSM layer, a second migration barrier layer, an interlayer, a ferromagnetic layer, and a capping layer. The TI or TSM layer is disposed in contact with the first and second migration barrier layers. The SOT device can also comprise a buffer layer, a ferromagnetic layer, an interlayer, a first migration barrier layer, a TI or TSM layer, a second migration barrier layer, and a capping layer. The TI or TSM layer is disposed in contact with the first and second migration barrier layers.

Abstract: The present invention relates to a system for grasping/suctioning unknown objects, using a robot arm or an industrial robot. The system comprising a 3D camera for taking images of the objects contained in said containing space and creating a 3D panoramic image; an unknown object segmentation model unit for receiving said 3D panoramic image as an input, and a processing the 3D panoramic image for creating a 2D mask and a 3D point cloud of each individual object/product in the 3D panoramic image; an unknown object grasping/suctioning model unit for outputting grasping/suctioning poses related to the target object based on the 3D point cloud of the target object, and selecting one of the feasible grasping/suctioning poses for controlling the robot arm to grasp/suction the target object according to said feasible grasping/suctioning pose.

Abstract: The present disclosure generally relates to topological semi-metal (TSM) and topological insulator (TI) based spin-orbit torque (SOT) devices and a method of forming thereof. TI or TSM-based SOT device (such as that with BiSb in the SOT layer) has been proposed for applications in magnetic switching and sensor applications, where current flows in a CIP (current-in-plane) or CPP (current-perpendicular-to-the-plane) direction, respectively. For CPP SOT devices, the requirement for the TI or TSM layer's bulk property is to be more insulating, to minimize shunting. However, for CIP SOT devices, the requirement for the TI or TSM layer's bulk property is to be more conductive, for less power consumption. Disclosed herein are various embodiments covering types and amounts of dopants for the TI or TSM layer, to decrease the bandgap of the TI or TSM layer for CIP SOT devices, thereby increasing the bulk conductivity for lower power consumption.

Abstract: Nitrogen doping an insulating layer can lower the bandgap of a magnetic storage device. It is challenging to nitrogen dope magnesium oxide (MgO). A cation can be added to allow the magnesium to hold onto the nitrogen dopant without highly oxidizing or nitriding the cation. The resulting nitrogen doped MgXO, where X is the cation, has a lower bandgap compared to a much similar barrier layer that has neither nitrogen nor a cation thus improving thermal and electrical reliabilities. The nitrogen doped MgXO is non-stoichiometric whereas comparably, an oxynitride is stoichiometric. Example cations that may be used include aluminum, titanium, vanadium, chromium, and scandium.

Abstract: Magnetic moments can be increased in hard disk drive (HDD) shields and ferromagnetic layers to minimize magnetic saturation while still maintaining low magnetic coercivity (Hc) and high saturated magnetic flux (Bs). A textured layer can be used to induce nucleation and growth of an interfacial nature such that body centered cubic (BCC) ferromagnetic materials with high Bs and low Hc are obtained while also increasing the magnetic moment. The textured layer will cause the ferromagnetic material to grow with low Hc regardless of the crystallographic orientation.

Abstract: Magnetic moments can be increased in hard disk drive (HDD) shields and ferromagnetic layers to minimize magnetic saturation while still maintaining low magnetic coercivity (Hc) and high saturated magnetic flux (Bs). A textured layer can be used to induce nucleation and growth of an interfacial nature such that body centered cubic (BCC) ferromagnetic materials with high Bs and low Hc are obtained while also increasing the magnetic moment. The textured layer will cause the ferromagnetic material to grow with low Hc regardless of the crystallographic orientation.

Abstract: The present disclosure generally relates to a magnetic sensor half bridge circuit. The half bridge circuit comprises a bias source connected to a first leg and a second leg. The first leg comprises one or more first spin-orbit torque (SOT) structures connected in series, each first SOT structure comprising a first ferromagnetic (FM) layer disposed on a first SOT layer. The first SOT layer has a first end connected to ground and a second end connected to a first voltage sensor. The second leg comprises one or more second SOT structures connected in series, each second SOT structure comprising a second FM layer disposed on a second SOT layer. The second SOT layer has a first end connected to a second voltage sensor and a second end connected to a ground. The first voltage sensor is disposed adjacent to the second voltage sensor.

Abstract: An apparatus and system are described to provide an in-memory computing non-volatile flash memory cell array used in a neural network. Each cell includes a Resistive RAM memory (RRAM) and a physical resistor formed from a high resistive material. The RRAM is programmed to either an on or off state in which the resistance is respectively significantly less or more than the resistor to permit the RRAM to act as a switch and allow for in-situ training. Multi-bit RRAM cells contain multiple RRAMs, each of which is connected to a resistor having a different resistance and read using the same input line. The resistors are formed from the same material as the resistor in the analog-to-digital converter used to read the array.

Abstract: The present disclosure generally relates to a magnetic recording head comprising one or more spin-orbit torque (SOT) devices, the SOT devices each comprising a bismuth antimony (BiSb) layer. The magnetic recording head comprises a SOT device comprising a first shield extending to a media facing surface (MFS), a seed layer disposed over the first shield, the seed layer being disposed at the MFS, a free layer disposed on the seed layer, the free layer being disposed at the MFS, a bismuth antimony (BiSb) layer disposed over the free layer, the BiSb layer being recessed from the MFS, a second shield disposed over the BiSb layer, the second shield extending to the MFS, and a shield notch coupled to the second shield, the shield notch being disposed between the first shield and the second shield. The magnetic recording head may be a two-dimensional magnetic recording head comprising two SOT devices.

Abstract: The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a first sensor disposed at a media facing surface (MFS) comprising at least one free layer, a second sensor disposed at the MFS comprising at least one free layer, a first spin generator spaced from the first sensor and recessed from the MFS, and a second spin generator spaced from the second sensor and recessed from the MFS. The first and second spin generators each individually comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise BiSb. The first and second sensors are configured to detect a read signal using a first voltage lead and a second voltage lead. The first and second spin generators are configured to inject spin current through non-magnetic layers to the first and second sensors using a plurality of current leads.

Abstract: An apparatus is provided that includes an array including n rows and m columns of nodes, each row of nodes coupled to one of n first conductive lines, each column of nodes coupled to one of m second conductive lines, each node of the n rows and m columns of nodes including a spin orbit torque MRAM non-volatile memory cell configured to store a corresponding weight of an n×m array of weights each having a first weight value or a second weight value, and a control circuit configured to apply n input voltages each having a first input value or a second input value to corresponding n first conductive lines, the n input voltages corresponding to an n-element input vector. The spin orbit torque MRAM non-volatile memory cells are configured to generate m output currents at the m second conductive lines upon application of the n input voltages. The m output currents corresponding to a result of multiplying the input vector by the n×m array of weights.

Abstract: The present disclosure generally relates to a deep neural network (DNN) device utilizing spin orbital-spin orbital (SO-SO) devices. The SO-SO devices each includes two SOT layers, a first spin orbit torque (SOT1) layer, a second spin orbit torque (SOT2) layer, and a ferromagnetic layer disposed between the SOT1 and SOT2 layer. Each SO-SO device further comprises three terminals, one per each SOT layer, for in plane current flow to or from the respective SOT layer, and one for perpendicular current flow through multiple layers, or the overall stack, of the SO-SO device. The SO-SO device thus efficiently provides spin-to-charge and charge-to-spin mechanisms in the same device, and can be flexibility configured to perform various functions of a neural node of a DNN. These functions include storing programmed weights, multiplying inputs and weights and summing such multiplication results, and performing an activation function to determine a neural node output.

Abstract: The present disclosure generally relates to a magnetic recording head comprising one or more spin-orbit torque (SOT) devices, the SOT devices each comprising a bismuth antimony (BiSb) layer. The magnetic recording head comprises a SOT device comprising a first shield extending to a media facing surface (MFS), a seed layer disposed over the first shield, the seed layer being disposed at the MFS, a free layer disposed on the seed layer, the free layer being disposed at the MFS, a bismuth antimony (BiSb) layer disposed over the free layer, the BiSb layer being recessed from the MFS, a second shield disposed over the BiSb layer, the second shield extending to the MFS, and a shield notch coupled to the second shield, the shield notch being disposed between the first shield and the second shield. The magnetic recording head may be a two-dimensional magnetic recording head comprising two SOT devices.

Abstract: Computing devices, such as mobile computing devices, have access to one or more image sensors that can capture images and video with multiple subjects. Some of these subjects may vary in priority for various tasks. It may be desired to increase or decrease the compression on each subject in order to more efficiently store the image data. Low-power, fast-response machine learning logic can be configured to allow for the generation of a plurality of inference data. Inference data can be associated with the type, motion and/or priority of the subjects as desired. This inference data can be utilized along with other subject data to generate one or more variable compression regions within the image data. The image data can be subsequently processed to compress different areas of the image based on a desired application. The variably compressed image can reduce file sizes and allow for more efficient storage and processing.

Abstract: The present disclosure is generally related to a deep neural network (DNN) device comprising a plurality of spin-orbit torque (SOT) cells. The DNN device comprises an array comprising n rows and m columns of nodes, each row of nodes coupled to one of n first conductive lines, each column of nodes coupled to one of m second conductive lines, each node of the n rows and m columns of nodes comprising a plurality of SOT cells, each SOT cell comprising: at least one SOT layer, at least one ferromagnetic (FM) layer, and a controller configured to store at least one corresponding weight of an n×m array of weights of a neural network in each of the SOT cell. The FM layer may comprise two or more domains, two or more elliptical arms, or two or more states.

Abstract: The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.

Abstract: The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.

Abstract: The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a (012) orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the (012) orientation. The BiSbE layer may be formed on a texturing layer to ensure the (012) orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the (012) orientation of the doped BiSbE layer.

Abstract: The present disclosure generally relates to a magnetic media drive comprising a magnetic recording head. The magnetic recording head comprises a main pole disposed at a media facing surface (MFS), a shield disposed at the MFS, a spin blocking layer disposed between the shield and the main pole, at least one non-magnetic layer disposed between the main pole and the shield, the at least one non-magnetic layer being disposed at the MFS, and at least one spin orbit torque (SOT) layer disposed over the at least one non-magnetic layer, the SOT layer being recessed a distance of about 20 nm to about 100 nm from the MFS. A ratio of a length of the SOT layer to a thickness of the SOT layer is greater than 1. The at least one SOT layer comprises BiSb.

Abstract: The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a first sensor disposed at a media facing surface (MFS) comprising at least one free layer, a second sensor disposed at the MFS comprising at least one free layer, a first spin generator spaced from the first sensor and recessed from the MFS, and a second spin generator spaced from the second sensor and recessed from the MFS. The first and second spin generators each individually comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise BiSb. The first and second sensors are configured to detect a read signal using a first voltage lead and a second voltage lead. The first and second spin generators are configured to inject spin current through non-magnetic layers to the first and second sensors using a plurality of current leads.