Abstract: System and method for adjusting side mirrors capture, by a primary camera, a facial image of a driver; estimate a 3D eye location with respect to a 3D coordinate of the primary camera based on the captured facial image; map the estimated 3D eye location to a respective set of pitch and yaw of the side mirror based on a look up table; and rotate the side mirror to a target position in accordance with the respective set of pitch and yaw. The lookup table includes a plurality of rows, each containing a pair of a key and a set of values. The key is a set of three parameters of 3D line of locations where the driver can observe an optimal view behind the vehicle, and the set of values includes a set of pitch and yaw of the side mirror corresponding to the 3D line of locations.

Abstract: A method for adjusting a side mirror of a vehicle includes capturing, by a primary camera provided in front of a driver of the vehicle, a facial image of the driver; estimating a 3D eye location with respect to a 3D coordinate of the primary camera based on the captured facial image; mapping the estimated 3D eye location to a respective set of pitch and yaw angles of the side mirror based on a lookup table; and rotating the side mirror to a target position in accordance with the respective set of pitch and yaw angles. The lookup table includes a plurality of rows, each row containing a pair of a key and a set of values. The key is a 3D eye location, and the set of values includes a set of pitch and yaw angles of the side mirror corresponding to the 3D eye location.

Abstract: A method for operating an IGBT includes determining a maximum stationary reverse bias required for operation of the IGBT, determining a first removal charge, the removal of which at the gate of the IGBT causes an electric field strength that enables the IGBT to accept the maximum stationary reverse bias during stationary blocking, determining a second removal charge, the removal of which at the gate causes an electric field strength that leads to a dynamic avalanche, and, when the IGBT is switched off, removing from the gate during a charge removal duration a removal charge that is greater than the first removal charge and smaller than the second removal charge.

Abstract: A method for operating an IGBT includes determining a maximum stationary reverse bias required for operation of the IGBT, determining a first removal charge, the removal of which at the gate of the IGBT causes an electric field strength that enables the IGBT to accept the maximum stationary reverse bias during stationary blocking, determining a second removal charge, the removal of which at the gate causes an electric field strength that leads to a dynamic avalanche, and, when the IGBT is switched off, removing from the gate during a charge removal duration a removal charge that is greater than the first removal charge and smaller than the second removal charge.

Abstract: A power semiconductor device includes a semiconductor body, a first load terminal structure arranged at a front side of the semiconductor body, and a second load terminal structure arranged at a back side of the semiconductor body, and configured for controlling a load current between the load terminal structures by means of at least one transistor cell. The at least one transistor cell is at least partially included in the semiconductor body and electrically connected to the first load terminal structure on one side and to a drift region on the other side, the drift region being of a first conductivity type. The semiconductor body further includes: a transistor short region of the first conductivity type, wherein a transition between the transistor short region and the first load terminal structure forms a Schottky contact; and a separation region of a second conductivity type separating the transistor short and drift regions.

Abstract: A power semiconductor device includes a semiconductor body, a first load terminal structure arranged at a front side of the semiconductor body, and a second load terminal structure arranged at a back side of the semiconductor body, and configured for controlling a load current between the load terminal structures by means of at least one transistor cell. The at least one transistor cell is at least partially included in the semiconductor body and electrically connected to the first load terminal structure on one side and to a drift region on the other side, the drift region being of a first conductivity type. The semiconductor body further includes: a transistor short region of the first conductivity type, wherein a transition between the transistor short region and the first load terminal structure forms a Schottky contact; and a separation region of a second conductivity type separating the transistor short and drift regions.