Abstract: A pressure sensor and a pressure sensing method are provided. The pressure sensor includes a substrate; a sensor thin film transistor (TFT) disposed on the substrate and including a gate insulating layer, wherein the gate insulating layer includes an organic matrix in which piezoelectric inorganic nano-particles are dispersed; a power unit configured to apply an alternating current (AC) signal to a gate of the sensor TFT; and a pressure sensing unit configured to obtain a remnant polarization value based on a drain current which is generated in response to the AC signal and detected by the sensor TFT, and to sense a pressure based on the remnant polarization value.

Abstract: A strain sensor and a method of manufacturing the same are provided. The strain sensor includes a substrate, a nanocomposite layer disposed on the substrate, and a protective layer disposed on the nanocomposite layer. The nanocomposite layer includes metallic nanowires, a first polymeric material, and a second polymeric material. The protective layer includes a third polymeric material. The metallic nanowires are randomly arranged in the nanocomposite layer.

Abstract: Provided is a strain sensing device using reduced graphene oxide (R-GO). The strain sensing device includes a flexible substrate, a gate electrode formed on the flexible substrate, a gate insulating layer configured to cover the gate electrode and include a part formed of a flexible material, an active layer formed of R-GO for sensing a strain, on the gate insulating layer, and a source and drain electrode formed on the active layer.

Abstract: Provided is a strain sensing device using reduced graphene oxide (R-GO). The strain sensing device includes a flexible substrate, a gate electrode formed on the flexible substrate, a gate insulating layer configured to cover the gate electrode and include a part formed of a flexible material, an active layer formed of R-GO for sensing a strain, on the gate insulating layer, and a source and drain electrode formed on the active layer.

Abstract: A pressure sensor and a pressure sensing method are provided. The pressure sensor includes a substrate; a sensor thin film transistor (TFT) disposed on the substrate and including a gate insulating layer, wherein the gate insulating layer includes an organic matrix in which piezoelectric inorganic nano-particles are dispersed; a power unit configured to apply an alternating current (AC) signal to a gate of the sensor TFT; and a pressure sensing unit configured to obtain a remnant polarization value based on a drain current which is generated in response to the AC signal and detected by the sensor TFT, and to sense a pressure based on the remnant polarization value.