Patents by Inventor Quang Tu THIEU

Quang Tu THIEU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11043602
    Abstract: Provided is a Schottky barrier diode which is configured from a Ga2O3-based semiconductor, and has a lower rising voltage than a conventional one. In one embodiment, the Schottky barrier diode 1 is provided which has: a semiconductor layer 10 configured from a Ga2O3-based single crystal; an anode electrode 11 which forms a Schottky junction with the semiconductor layer 10, and has a portion which contacts the semiconductor layer 10 and is composed of Fe or Cu; and a cathode electrode 12.
    Type: Grant
    Filed: February 19, 2018
    Date of Patent: June 22, 2021
    Assignees: Tamura Corporation, Novel Crystal Technology, Inc.
    Inventors: Kohei Sasaki, Daiki Wakimoto, Yuki Koishikawa, Quang Tu Thieu
  • Publication number: 20210151611
    Abstract: A Schottky barrier diode includes a semiconductor layer including a Ga2O3-based single crystal, an anode electrode that forms a Schottky junction with the semiconductor layer and is configured so that a portion in contact with the semiconductor layer includes Mo or W, and a cathode electrode. A turn-on voltage thereof is not less than 0.3 V and not more than 0.5 V.
    Type: Application
    Filed: June 12, 2018
    Publication date: May 20, 2021
    Applicants: TAMURA CORPORATION, Novel Crystal Technology, Inc.
    Inventors: Kohei SASAKI, Daiki WAKIMOTO, Yuki KOISHIKAWA, Quang Tu THIEU
  • Patent number: 11011653
    Abstract: Provided is a Schottky barrier diode which is configured from a Ga2O3-based semiconductor, and has a lower rising voltage than a conventional one. In one embodiment, the Schottky barrier diode 1 is provided which has: a semiconductor layer 10 configured from a Ga2O3-based single crystal; an anode electrode 11 which forms a Schottky junction with the semiconductor layer 10, and has a portion which contacts the semiconductor layer 10 and is composed of Fe or Cu; and a cathode electrode 12.
    Type: Grant
    Filed: February 19, 2018
    Date of Patent: May 18, 2021
    Assignees: Tamura Corporation, Novel Crystal Technology, Inc.
    Inventors: Kohei Sasaki, Daiki Wakimoto, Yuki Koishikawa, Quang Tu Thieu
  • Publication number: 20190363197
    Abstract: Provided is a Schottky barrier diode which is configured from a Ga2O3-based semiconductor, and has a lower rising voltage than a conventional one. In one embodiment, the Schottky barrier diode 1 is provided which has: a semiconductor layer 10 configured from a Ga2O3-based single crystal; an anode electrode 11 which forms a Schottky junction with the semiconductor layer 10, and has a portion which contacts the semiconductor layer 10 and is composed of Fe or Cu; and a cathode electrode 12.
    Type: Application
    Filed: February 19, 2018
    Publication date: November 28, 2019
    Applicants: TAMURA CORPORATION, NOVEL CRYSTAL TECHNOLOGY, INC.
    Inventors: Kohei SASAKI, Daiki WAKIMOTO, Yuki KOISHIKAWA, Quang Tu THIEU