Patents by Inventor Quang X. Nguyen

Quang X. Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for fabricating the same
    Patent number: 6373100
    Abstract: A vertically diffused FET (10) is fabricated on a semiconductor die (11) that includes an N+ substrate (12) and an N− epitaxial layer (14). The FET (10) has a source region (36) and a channel region (38) near a front surface (15) of the epitaxial layer (14), and a drain region in the substrate (12). A trench (22) extends through the epitaxial layer (14) to the substrate (12). A conductive layer (24) fills the trench (22), thereby forming a conductive plug (25) electrically coupled to the substrate (12). The conductive plug (25) forms a top side drain electrode of the FET (10).
    Type: Grant
    Filed: March 4, 1998
    Date of Patent: April 16, 2002
    Assignee: Semiconductor Components Industries LLC
    Inventors: Irenee M. Pages, Quang X. Nguyen, Cynthia Trigas, Edouard de Frésart, Hak-Yam Tsoi, Rainer Thoma, Jeffrey Pearse