Patents by Inventor Quanling LI

Quanling LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240332910
    Abstract: A high-efficiency active layer includes a strained quantum well layer and, at one side thereof, a first strained barrier layer configured to transport electrons. The first strained barrier layer and the strained quantum well layers are configured to form strain compensation. A second barrier layer is positioned on the other side of the strained quantum well layer and is configured to transport holes. A band offset between conduction bands of the first strained barrier layer and of the strained quantum well layer is less than a band offset between valence bands of the strained quantum well layer and of the first strained barrier layer. A band offset between valence bands of the strained quantum well layer and of the second barrier layer is less than a band offset between conduction bands of the second barrier layer and of the strained quantum well layer. Light-emitting efficiency and reliability are improved.
    Type: Application
    Filed: May 29, 2023
    Publication date: October 3, 2024
    Applicants: SUZHOU EVERBRIGHT PHOTONICS CO., LTD., EVERBRIGHT INSTITUTE OF SEMICONDUCTOR PHOTONICS CO., LTD.
    Inventors: Jun WANG, Shaoyang TAN, Li ZHOU, Yang CHENG, Xiao XIAO, Yintao GUO, Hao YU, Quanling LI, Xinsheng LIAO, Dayong MIN
  • Publication number: 20240222930
    Abstract: A high-brightness high-power semiconductor light-emitting device and a method for manufacturing same. The high-brightness high-power semiconductor light-emitting device includes: a semiconductor substrate layer; a modulation structure arranged on the semiconductor substrate layer, where the modulation structure includes: a carrier modulation active layer; a modulation tunnel junction arranged on a side of the carrier modulation active layer away from the semiconductor substrate layer; and a cavity extension layer arranged on a side of the modulation tunnel junction away from the carrier modulation active layer; a first active layer arranged on a side of the modulation structure away from the semiconductor substrate layer, where a carrier concentration in the carrier modulation active layer is less than a carrier concentration in the first active layer; and a first current-limiting layer arranged on a side of the first active layer away from the modulation structure.
    Type: Application
    Filed: July 27, 2022
    Publication date: July 4, 2024
    Inventors: Yao XIAO, Jun WANG, Pei MIAO, Heng LIU, Quanling LI, Xinsheng LIAO, Dayong MIN
  • Publication number: 20240222939
    Abstract: A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The semiconductor structure includes: a semiconductor substrate layer; an N-type waveguide structure arranged on the semiconductor substrate layer; and an active layer arranged on a surface of the N-type waveguide structure on a side away from the semiconductor substrate layer. The N-type waveguide structure includes a first N-type waveguide layer and a second N-type waveguide layer that are stacked. The second N-type waveguide layer is arranged between the first N-type waveguide layer and the active layer. A conduction band level of the first N-type waveguide layer is the same as a conduction band level of the second N-type waveguide layer. A valence band level of the first N-type waveguide layer is lower than a valence band level of the second N-type waveguide layer. The semiconductor structure increases light emitting efficiency.
    Type: Application
    Filed: July 20, 2022
    Publication date: July 4, 2024
    Inventors: Jun WANG, Shaoyang TAN, Li ZHOU, Bangguo WANG, Yintao GUO, Xinsheng LIAO, Quanling LI
  • Publication number: 20240222931
    Abstract: A high-reliability low-defect semiconductor light-emitting device and a method for manufacturing same. The high-reliability low-defect semiconductor light-emitting device includes: a semiconductor substrate layer; an active layer arranged on the semiconductor substrate layer; a doped semiconductor contact layer arranged on a side of the active layer away from the semiconductor substrate layer, where the doped semiconductor contact layer includes a first area and an edge area surrounding the first area; a protection layer arranged on a side of the edge area of the doped semiconductor contact layer away from the active layer; and a front electrode layer, arranged on a side of the first area away from the active layer, where an upper surface of the front electrode layer in the first area is lower than an upper surface of the protection layer. The semiconductor light-emitting device has both high reliability and reduced process control costs.
    Type: Application
    Filed: July 20, 2022
    Publication date: July 4, 2024
    Applicant: Everybright Institute of Semiconductor Photonics Co., Ltd.
    Inventors: Jun WANG, Shaoyang Tan, Lichen Zhang, Yiwen Hu, Wu Zhao, Bo Li, Quanling Li
  • Patent number: 11646548
    Abstract: The present application relates to the technical field of semiconductor optoelectronics, in particular to a multi-active-region cascaded semiconductor laser. The multi-active-region cascaded semiconductor laser comprises: a plurality of cascaded active regions, wherein each cascaded active region comprises a plurality of active regions; and a tunnel junction, arranged on at least one side of the cascaded active region and electrically connected with the cascaded active region; wherein in the cascaded active region, at least one group of adjacent active regions are connected through a barrier layer. In this way, more active regions are added in the periodic gain structure, which improves the internal quantum efficiency of the device and also reduces the carrier density, thereby obtaining more gains.
    Type: Grant
    Filed: May 24, 2021
    Date of Patent: May 9, 2023
    Assignees: SUZHOU EVERBRIGHT PHOTONICS CO., LTD., EVERBRIGHT INSTITUTE OF SEMICONDUCTOR PHOTONICS CO., LTD.
    Inventors: Jun Wang, Yao Xiao, Shaoyang Tan, Heng Liu, Quanling Li
  • Publication number: 20220344904
    Abstract: The present application relates to the technical field of semiconductor optoelectronics, in particular to a multi-active-region cascaded semiconductor laser. The multi-active-region cascaded semiconductor laser comprises: a plurality of cascaded active regions, wherein each cascaded active region comprises a plurality of active regions; and a tunnel junction, arranged on at least one side of the cascaded active region and electrically connected with the cascaded active region; wherein in the cascaded active region, at least one group of adjacent active regions are connected through a barrier layer. In this way, more active regions are added in the periodic gain structure, which improves the internal quantum efficiency of the device and also reduces the carrier density, thereby obtaining more gains.
    Type: Application
    Filed: May 24, 2021
    Publication date: October 27, 2022
    Inventors: Jun WANG, Yao XIAO, Shaoyang TAN, Heng LIU, Quanling LI