Abstract: The present invention relates to a system and method of inspecting a semiconductor sample. A plurality of scans of the semiconductor sample are recorded. Each of the scans comprises a spatially resolved measurement of a property of interest. At least one cross-correlation is calculated between at least two of the plurality of scans. For each of the plurality of scans, a respective shift value is calculated based on the at least one cross-correlation. The scans are superimposed with each other. In the superposition, each of the scans is shifted by the respective shift value. The shift values can be adapted to compensate a drift of the semiconductor sample which occurs while the scans are recorded. Hence, the present invention helps overcome problems caused by the drift.

Abstract: The present invention relates to a system and method of inspecting a semiconductor sample. A plurality of scans of the semiconductor sample are recorded. Each of the scans comprises a spatially resolved measurement of a property of interest. At least one cross-correlation is calculated between at least two of the plurality of scans. For each of the plurality of scans, a respective shift value is calculated based on the at least one cross-correlation. The scans are superimposed with each other. In the superposition, each of the scans is shifted by the respective shift value. The shift values can be adapted to compensate a drift of the semiconductor sample which occurs while the scans are recorded. Hence, the present invention helps overcome problems caused by the drift.

Abstract: In a method and an apparatus for determining the thickness of a thin layer coated on a surface, a section is prepared and a digital image of the section is obtained. An intensity profile in the thickness direction of the layer is extracted from the digital image and is analyzed on the basis of predefined characteristics of the intensity profile to precisely determine the layer thickness. This technique is particularly advantageous in determining the layer thickness when said layer is formed on a curved surface.