Patents by Inventor Quentin HUBERT
Quentin HUBERT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11943931Abstract: In one embodiment, a non-volatile memory device includes a vertical state transistor disposed in a semiconductor substrate, where the vertical state transistor is configured to trap charges in a dielectric interface between a semiconductor well and a control gate. A vertical selection transistor is disposed in the semiconductor substrate. The vertical selection transistor is disposed under the state transistor, and configured to select the state transistor.Type: GrantFiled: April 1, 2021Date of Patent: March 26, 2024Assignee: STMicroelectronics (Rousset) SASInventors: Quentin Hubert, Abderrezak Marzaki, Julien Delalleau
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Patent number: 11493470Abstract: Moisture that is possibly present in an integrated circuit is detected autonomously by the integrated circuit itself. An interconnect region of the integrated circuit includes a metal level with a first track and a second track which are separated by a dielectric material. A detection circuit applies a potential difference between the first and second tracks. A current circulating in one of the first and second tracks in response to the potential difference is measured and compared to a threshold. If the current exceeds the threshold, this is indicative of the presence of moisture which renders said dielectric material less insulating.Type: GrantFiled: July 14, 2020Date of Patent: November 8, 2022Assignee: STMicroelectronics (Rousset) SASInventors: Matthias Vidal-Dho, Quentin Hubert, Pascal Fornara
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Patent number: 11139303Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.Type: GrantFiled: September 21, 2020Date of Patent: October 5, 2021Assignees: STMicroelectronics (Rousset) SAS, STMicroelectronics (Grolles 2) SASInventors: Abderrezak Marzaki, Arnaud Regnier, Stephan Niel, Quentin Hubert, Thomas Cabout
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Patent number: 11081488Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.Type: GrantFiled: September 21, 2020Date of Patent: August 3, 2021Assignees: STMicroelectronics (Rousset) SAS, STMicroelectronics (Crolles 2) SASInventors: Abderrezak Marzaki, Arnaud Regnier, Stephan Niel, Quentin Hubert, Thomas Cabout
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Publication number: 20210225853Abstract: In one embodiment, a non-volatile memory device includes a vertical state transistor disposed in a semiconductor substrate, where the vertical state transistor is configured to trap charges in a dielectric interface between a semiconductor well and a control gate. A vertical selection transistor is disposed in the semiconductor substrate. The vertical selection transistor is disposed under the state transistor, and configured to select the state transistor.Type: ApplicationFiled: April 1, 2021Publication date: July 22, 2021Inventors: Quentin Hubert, Abderrezak Marzaki, Julien Delalleau
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Patent number: 10991710Abstract: A non-volatile memory device includes a vertical state transistor disposed in a semiconductor substrate, where the vertical state transistor is configured to trap charges in a dielectric interface between a semiconductor well and a control gate. A vertical selection transistor is disposed in the semiconductor substrate. The vertical selection transistor is disposed under the state transistor, and configured to select the state transistor.Type: GrantFiled: April 23, 2019Date of Patent: April 27, 2021Assignee: STMICROELECTRONICS (ROUSSET) SASInventors: Quentin Hubert, Abderrezak Marzaki, Julien Delalleau
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Publication number: 20210018458Abstract: Moisture that is possibly present in an integrated circuit is detected autonomously by the integrated circuit itself. An interconnect region of the integrated circuit includes a metal level with a first track and a second track which are separated by a dielectric material. A detection circuit applies a potential difference between the first and second tracks. A current circulating in one of the first and second tracks in response to the potential difference is measured and compared to a threshold. If the current exceeds the threshold, this is indicative of the presence of moisture which renders said dielectric material less insulating.Type: ApplicationFiled: July 14, 2020Publication date: January 21, 2021Applicant: STMicroelectronics (Rousset) SASInventors: Matthias VIDAL-DHO, Quentin HUBERT, Pascal FORNARA
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Publication number: 20210005612Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.Type: ApplicationFiled: September 21, 2020Publication date: January 7, 2021Applicants: STMicroelectronics (Rousset) SAS, STMicroelectronics (Crolles 2) SASInventors: Abderrezak MARZAKI, Arnaud REGNIER, Stephan NIEL, Quentin HUBERT, Thomas CABOUT
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Publication number: 20210005613Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.Type: ApplicationFiled: September 21, 2020Publication date: January 7, 2021Applicants: STMicroelectronics (Rousset) SAS, STMicroelectronics (Crolles 2) SASInventors: Abderrezak MARZAKI, Arnaud REGNIER, Stephan NIEL, Quentin HUBERT, Thomas CABOUT
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Patent number: 10818669Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.Type: GrantFiled: August 24, 2018Date of Patent: October 27, 2020Assignees: STMicroelectronics (Rousset) SAS, STMicroelectronics (Crolles 2) SASInventors: Abderrezak Marzaki, Arnaud Regnier, Stephan Niel, Quentin Hubert, Thomas Cabout
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Patent number: 10770409Abstract: An integrated electronic circuit includes a semiconductor substrate with a semiconductor well that is isolated by a buried semiconductor region located under the semiconductor well. A vertical MOS transistor formed in the semiconductor well includes a source-drain region provided by the buried semiconductor region. Backside thinning of the semiconductor substrate is detected by biasing the vertical MOS transistor into an on condition to supply a current and then comparing that current to a threshold. Current less than a threshold is indicative that the semiconductor substrate has been thinned from the backside.Type: GrantFiled: August 1, 2018Date of Patent: September 8, 2020Assignee: STMicroelectronics (Rousset) SASInventors: Abderrezak Marzaki, Christian Rivero, Quentin Hubert
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Publication number: 20190341390Abstract: In one embodiment, a non-volatile memory device includes a vertical state transistor disposed in a semiconductor substrate, where the vertical state transistor is configured to trap charges in a dielectric interface between a semiconductor well and a control gate. A vertical selection transistor is disposed in the semiconductor substrate. The vertical selection transistor is disposed under the state transistor, and configured to select the state transistor.Type: ApplicationFiled: April 23, 2019Publication date: November 7, 2019Inventors: Quentin Hubert, Abderrezak Marzaki, Julien Delalleau
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Publication number: 20190067291Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.Type: ApplicationFiled: August 24, 2018Publication date: February 28, 2019Applicants: STMicroelectronics (Rousset) SAS, STMicroelectronics (Crolles 2) SASInventors: Abderrezak MARZAKI, Arnaud REGNIER, Stephan NIEL, Quentin HUBERT, Thomas CABOUT
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Publication number: 20190043814Abstract: An integrated electronic circuit includes a semiconductor substrate with a semiconductor well that is isolated by a buried semiconductor region located under the semiconductor well. A vertical MOS transistor formed in the semiconductor well includes a source-drain region provided by the buried semiconductor region. Backside thinning of the semiconductor substrate is detected by biasing the vertical MOS transistor into an on condition to supply a current and then comparing that current to a threshold. Current less than a threshold is indicative that the semiconductor substrate has been thinned from the backside.Type: ApplicationFiled: August 1, 2018Publication date: February 7, 2019Applicant: STMicroelectronics (Rousset) SASInventors: Abderrezak MARZAKI, Christian RIVERO, Quentin HUBERT
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Patent number: 9472271Abstract: A method for pre-programming a matrix of phase-change memory cells, including a phase-change material positioned between two conducting electrodes and able to be reversely electrically modified so as to vary the resistivity of the memory cell. A dielectric layer is provided with the memory cell having an original resistive state at the end of the memory cell production process. A pre-programming of the matrix is executed prior to mounting a component containing the matrix on a support. A breakdown voltage is applied to a selection of memory cells so that, for each one of the selected cells, the layer of the dielectric material breaks down to bring the cell from the original resistive state to a second resistive state.Type: GrantFiled: February 7, 2014Date of Patent: October 18, 2016Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Institut Polytechnique de GrenobleInventors: Quentin Hubert, Carine Jahan
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Publication number: 20140233307Abstract: A method for pre-programming a matrix of phase-change memory cells, including a phase-change material positioned between two conducting electrodes and able to be reversely electrically modified so as to vary the resistivity of the memory cell. A dielectric layer is provided with the memory cell having an original resistive state at the end of the memory cell production process. A pre-programming of the matrix is executed prior to mounting a component containing the matrix on a support. A breakdown voltage is applied to a selection of memory cells so that, for each one of the selected cells, the layer of the dielectric material breaks down to bring the cell from the original resistive state to a second resistive state.Type: ApplicationFiled: February 7, 2014Publication date: August 21, 2014Applicants: Institut Polytechnique de Grenoble, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: Quentin HUBERT, Carine JAHAN