Abstract: A vertical tunneling field effect transistor (TFET) and method for forming a vertical tunneling field effect transistor (TFET) is disclosed. The vertical tunneling field effect transistor TFET comprises a vertical core region, a vertical source region, a vertical drain region and a gate structure. The vertical core region is extending perpendicularly from a semiconductor substrate, having a top surface, consisting of a doped outer part and a middle part. The vertical source region of semiconducting core material comprises the doped outer part of the vertical core region. The vertical drain region of semiconducting drain material comprises along its longitudinal direction a first drain part and a second drain part, the first drain part either directly surrounding said vertical source region or directly sandwiching said vertical source region between two sub-parts of said first drain part, the second drain part located directly above and in contact with the first drain part.

Abstract: A Tunnel Field Effect Transistor device (TFET) made of at least following layers: a highly doped drain layer, a highly doped source layer, a channel layer, a gate dielectric layer and a gate electrode layer, the gate dielectric layer extending along the source layer, and a highly doped pocket layer extending in between and along the gate dielectric layer and the source layer, characterized in that the pocket layer extends to between and along the source layer and the channel layer.

Abstract: A vertical tunneling field effect transistor (TFET) and method for forming a vertical tunneling field effect transistor (TFET) is disclosed. The vertical tunneling field effect transistor TFET comprises a vertical core region, a vertical source region, a vertical drain region and a gate structure. The vertical core region is extending perpendicularly from a semiconductor substrate, having a top surface, consisting of a doped outer part and a middle part. The vertical source region of semiconducting core material comprises the doped outer part of the vertical core region. The vertical drain region of semiconducting drain material comprises along its longitudinal direction a first drain part and a second drain part, the first drain part either directly surrounding said vertical source region or directly sandwiching said vertical source region between two sub-parts of said first drain part, the second drain part located directly above and in contact with the first drain part.

Abstract: A Tunnel Field Effect Transistor device (TFET) made of at least following layers: a highly doped drain layer, a highly doped source layer, a channel layer, a gate dielectric layer and a gate electrode layer, the gate dielectric layer extending along the source layer, and a highly doped pocket layer extending in between and along the gate dielectric layer and the source layer, characterized in that the pocket layer extends to between and along the source layer and the channel layer.