Patents by Inventor Quentin Stainer

Quentin Stainer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9305628
    Abstract: MRAM cell including a magnetic tunnel junction including a sense layer, a storage layer, a tunnel barrier layer and an antiferromagnetic layer exchange-coupling the storage layer such that the storage magnetization can be pinned when the antiferromagnetic layer is below a critical temperature and freely varied when the antiferromagnetic layer is heated at or above the critical temperature. The sense layer is arranged such that the sense magnetization can be switched from a first stable direction to another stable direction opposed to the first direction. The switched sense magnetization generates a sense stray field being large enough for switching the storage magnetization according to the switched sense magnetization, when the magnetic tunnel junction is heated at the writing temperature. The disclosure also relates to a method for writing to the MRAM cell with increased reliability and reduced power consumption.
    Type: Grant
    Filed: December 2, 2013
    Date of Patent: April 5, 2016
    Assignee: CROCUS TECHNOLOGY SA
    Inventor: Quentin Stainer
  • Publication number: 20160012874
    Abstract: Self-referenced magnetic random access memory (MRAM) cell including a magnetic tunnel junction including a sense layer; a storage layer having a storage magnetization; a tunnel barrier layer between the sense and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such that the storage magnetization can be pinned when the antiferromagnetic layer is below a critical temperature and freely varied when the antiferromagnetic layer is heated at or above the critical temperature. The sense layer includes a first sense layer having a first sense magnetization, a second sense layer having a second sense magnetization and spacer layer between the first and second sense layers. The MRAM cell can be read with low power consumption.
    Type: Application
    Filed: February 21, 2014
    Publication date: January 14, 2016
    Applicant: Crocus Technology SA
    Inventor: Quentin Stainer
  • Publication number: 20150348607
    Abstract: MRAM cell including a magnetic tunnel junction including a sense layer, a storage layer, a tunnel barrier layer and an antiferromagnetic layer exchange-coupling the storage layer such that the storage magnetization can be pinned when the antiferromagnetic layer is below a critical temperature and freely varied when the antiferromagnetic layer is heated at or above the critical temperature. The sense layer is arranged such that the sense magnetization can be switched from a first stable direction to another stable direction opposed to the first direction. The switched sense magnetization generates a sense stray field being large enough for switching the storage magnetization according to the switched sense magnetization, when the magnetic tunnel junction is heated at the writing temperature. The disclosure also relates to a method for writing to the MRAM cell with increased reliability and reduced power consumption.
    Type: Application
    Filed: December 2, 2013
    Publication date: December 3, 2015
    Inventor: Quentin Stainer
  • Patent number: 8743597
    Abstract: The present disclosure concerns a MRAM element comprising a magnetic tunnel junction comprising: a storage layer, a sense layer, and a tunnel barrier layer included between the storage layer and the sense layer; the storage layer comprising a first magnetic layer having a first storage magnetization; a second magnetic layer having a second storage magnetization; and a non-magnetic coupling layer separating the first and second magnetic layers such that the first storage magnetization is substantially antiparallel to the second storage magnetization; the first and second magnetic layers being arranged such that: at a read temperature the first storage magnetization is substantially equal to the second storage magnetization; and at a write temperature which is higher than the read temperature the second storage magnetization is larger than the first storage magnetization. The disclosed MRAM element generates a low stray field when the magnetic tunnel junction is cooled at a low temperature.
    Type: Grant
    Filed: December 12, 2012
    Date of Patent: June 3, 2014
    Assignee: Crocus Technology SA
    Inventors: Ioan Lucian Prejbeanu, Lucien Lombard, Quentin Stainer, Kenneth Mackay