Patents by Inventor Qun Xia

Qun Xia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method And Apparatus For Deposition Of Low-K Films
    Publication number: 20180301333
    Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.
    Type: Application
    Filed: April 12, 2018
    Publication date: October 18, 2018
    Inventors: Ning Li, Zhelin Sun, Mihaela Balseanu, Li-Qun Xia, Bhaskar Jyoti Bhuyan, Mark Saly
  • Atomic Layer Deposition Of Films Comprising Silicon, Carbon And Nitrogen Using Halogenated Silicon Precursors
    Publication number: 20180291505
    Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.
    Type: Application
    Filed: June 12, 2018
    Publication date: October 11, 2018
    Inventors: Victor Nguyen, Ning Li, Mihaela Balseanu, Li-Qun Xia, Mark Saly, David Thompson
  • Method And Apparatus For Selective Deposition Of Dielectric Films
    Publication number: 20180211833
    Abstract: Processing platforms having a central transfer station with a robot and an environment having greater than or equal to about 0.1% by weight water vapor, a pre-clean chamber connected to a side of the transfer station and a batch processing chamber connected to a side of the transfer station. The processing platform configured to pre-clean a substrate to remove native oxides from a first surface, form a blocking layer using a alkylsilane and selectively deposit a film. Methods of using the processing platforms and processing a plurality of wafers are also described.
    Type: Application
    Filed: January 24, 2018
    Publication date: July 26, 2018
    Inventors: Ning Li, Mihaela Balseanu, Li-Qun Xia, Dongqing Yang, Lala Zhu, Malcolm J. Bevan, Theresa Kramer Guarini, Wenbo Yan
  • Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursors
    Patent number: 10023958
    Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.
    Type: Grant
    Filed: November 5, 2014
    Date of Patent: July 17, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Victor Nguyen, Ning Li, Mihaela Balseanu, Li-Qun Xia, Mark Saly, David Thompson
  • MANAGING REAL-TIME HANDWRITING RECOGNITION
    Publication number: 20180173415
    Abstract: Methods, systems, and computer-readable media related to a technique for providing handwriting input functionality on a user device. A handwriting recognition module is trained to have a repertoire comprising multiple non-overlapping scripts and capable of recognizing tens of thousands of characters using a single handwriting recognition model. The handwriting input module provides real-time, stroke-order and stroke-direction independent handwriting recognition for multi-character handwriting input. In particular, real-time, stroke-order and stroke-direction independent handwriting recognition is provided for multi-character, or sentence level Chinese handwriting recognition. User interfaces for providing the handwriting input functionality are also disclosed.
    Type: Application
    Filed: February 15, 2018
    Publication date: June 21, 2018
    Inventors: Mei-Qun Xia, Jannes G. Dolfing, Ryan S. Dixon, Karl M. Groethe, Karan Misra, Jerome R. Bellegarda, Ueli Meier
  • PEALD of films comprising silicon nitride
    Patent number: 9984868
    Abstract: Provided are methods of for deposition of SiN films via PEALD processes. Certain methods pertain to exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: May 29, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Victor Nguyen, Woong Jae Lee, Mihaela Balseanu, Li-Qun Xia, Derek R. Witty
  • Methods And Systems To Modulate Film Stress
    Publication number: 20180130642
    Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.
    Type: Application
    Filed: November 7, 2017
    Publication date: May 10, 2018
    Inventors: Tsutomu Tanaka, John C. Forster, Ran Liu, Kenichi Ohno, Ning Li, Mihaela Balseanu, Keiichi Tanaka, Li-Qun Xia
  • High Temperature Silicon Oxide Atomic Layer Deposition Technology
    Publication number: 20180076023
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Application
    Filed: November 7, 2017
    Publication date: March 15, 2018
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • Managing real-time handwriting recognition
    Patent number: 9898187
    Abstract: Methods, systems, and computer-readable media related to a technique for providing handwriting input functionality on a user device. A handwriting recognition module is trained to have a repertoire comprising multiple non-overlapping scripts and capable of recognizing tens of thousands of characters using a single handwriting recognition model. The handwriting input module provides real-time, stroke-order and stroke-direction independent handwriting recognition for multi-character handwriting input. In particular, real-time, stroke-order and stroke-direction independent handwriting recognition is provided for multi-character, or sentence level Chinese handwriting recognition. User interfaces for providing the handwriting input functionality are also disclosed.
    Type: Grant
    Filed: May 29, 2014
    Date of Patent: February 20, 2018
    Assignee: APPLE INC.
    Inventors: Mei-Qun Xia, Jannes G. Dolfing, Ryan S. Dixon, Karl M. Groethe, Karan Misra, Jerome R. Bellegarda, Ueli Meier
  • Methods For Depositing Low K And Low Wet Etch Rate Dielectric Thin Films
    Publication number: 20180040470
    Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.
    Type: Application
    Filed: October 20, 2017
    Publication date: February 8, 2018
    Inventors: Ning Li, Mark Saly, David Thompson, Mihaela Balseanu, Li-Qun Xia
  • High temperature silicon oxide atomic layer deposition technology
    Patent number: 9875888
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: January 23, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • Continuous Substrate Processing System
    Publication number: 20170365491
    Abstract: A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.
    Type: Application
    Filed: August 29, 2017
    Publication date: December 21, 2017
    Inventors: Banqiu Wu, Nag B. Patibandla, Toshiaki Fujita, Ralf Hofmann, Pravin K. Narwankar, Jeonghoon Oh, Srinivas Satya, Li-Qun Xia
  • Methods for depositing low k and low wet etch rate dielectric thin films
    Patent number: 9799511
    Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: October 24, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Ning Li, Mark Saly, David Thompson, Mihaela Balseanu, Li-Qun Xia
  • Selective Deposition Of Silicon Nitride Films For Spacer Applications
    Publication number: 20170263437
    Abstract: Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature so that the film can be selectively etched from the top and bottom of the feature relative to the film on the sidewalls of the feature.
    Type: Application
    Filed: March 10, 2017
    Publication date: September 14, 2017
    Inventors: Ning Li, Mihaela Balseanu, Li-Qun Xia
  • Methods And Apparatus For Selective Dry Etch
    Publication number: 20170263438
    Abstract: Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature. Selectively dry etching the film from the top and bottom of the feature relative to the film on the sidewalls of the feature using a high intensity plasma.
    Type: Application
    Filed: March 10, 2017
    Publication date: September 14, 2017
    Inventors: Ning Li, Mihaela Balseanu, Li-Qun Xia, Dongqing Yang, Anchuan Wang
  • Continuous substrate processing system
    Patent number: 9748125
    Abstract: A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.
    Type: Grant
    Filed: January 31, 2013
    Date of Patent: August 29, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Banqiu Wu, Nag B. Patibandla, Toshiaki Fujita, Ralf Hofmann, Pravin K. Narwankar, Jeonghoon Oh, Srinivas Satya, Li-Qun Xia
  • RESIST FORTIFICATION FOR MAGNETIC MEDIA PATTERNING
    Publication number: 20170206922
    Abstract: A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.
    Type: Application
    Filed: March 30, 2017
    Publication date: July 20, 2017
    Inventors: Christopher Dennis BENCHER, Roman GOUK, Steven VERHAVERBEKE, Li-Qun XIA, Yong-Won LEE, Matthew D. SCOTNEY-CASTLE, Martin A. HILKENE, Peter I. PORSHNEV
  • Resist fortification for magnetic media patterning
    Patent number: 9646642
    Abstract: A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: May 9, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Christopher Dennis Bencher, Roman Gouk, Steven Verhaverbeke, Li-Qun Xia, Yong-Won Lee, Matthew D. Scotney-Castle, Martin A. Hilkene, Peter I. Porshnev
  • Cu/barrier interface enhancement
    Patent number: 9633861
    Abstract: Embodiments of the present invention provide processes to selectively form a metal layer on a conductive surface, followed by flowing a silicon based compound over the metal layer to form a metal silicide layer. In one embodiment, a substrate having a conductive surface and a dielectric surface is provided. A metal layer is then deposited on the conductive surface. A metal silicide layer is formed as a result of flowing a silicon based compound over the metal layer. A dielectric is formed over the metal silicide layer.
    Type: Grant
    Filed: February 13, 2014
    Date of Patent: April 25, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Weifeng Ye, Mei-yee Shek, Mihaela Balseanu, Xiaojun Zhang, Xiaolan Ba, Yu Jin, Li-Qun Xia
  • Enhancing electrical property and UV compatibility of ultrathin blok barrier film
    Patent number: 9580801
    Abstract: Embodiments described herein generally relate to the formation of a UV compatible barrier stack. Methods described herein can include delivering a process gas to a substrate positioned in a process chamber. The process gas can be activated to form an activated process gas, the activated process gas forming a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen. The activated process gas can then be purged from the process chamber. An activated nitrogen-containing gas can be delivered to the barrier layer, the activated nitrogen-containing gas having a N2:NH3 ratio of greater than about 1:1. The activated nitrogen-containing gas can then be purged from the process chamber. The above elements can be performed one or more times to deposit the barrier stack.
    Type: Grant
    Filed: November 7, 2014
    Date of Patent: February 28, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Xiaolan Ba, Weifeng Ye, Mei-yee Shek, Yu Jin, Li-Qun Xia, Deenesh Padhi, Alexandros T. Demos