Patents by Inventor Qun Ya

Qun Ya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid electrolytic capacitor with enhanced humidity resistance and method for producing the same
    Patent number: 10224150
    Abstract: An improved capacitor is provided. The capacitor comprises an anode and a functional dielectric on said anode and a conductive layer on the functional dielectric. An anode wire extends from said anode wherein the anode wire has a thickened dielectric layer thereon.
    Type: Grant
    Filed: February 2, 2016
    Date of Patent: March 5, 2019
    Assignee: KEMET Electronics Corporation
    Inventors: Liancai Ning, Qun Ya
  • Solid Electrolytic Capacitor with Enhanced Humidity Resistance and Method for Producing the Same
    Publication number: 20170221637
    Abstract: An improved capacitor is provided. The capacitor comprises an anode and a functional dielectric on said anode and a conductive layer on the functional dielectric. An anode wire extends from said anode wherein the anode wire has a thickened dielectric layer thereon.
    Type: Application
    Filed: February 2, 2016
    Publication date: August 3, 2017
    Inventors: Liancai Ning, Qun Ya
  • Vertical stack approach in low profile aluminum solid electrolytic capacitors
    Patent number: 9576734
    Abstract: An improved capacitor and method of making an improved capacitor is set forth. The capacitor has planer anodes with each anode comprising a fusion end and a separated end and the anodes are in parallel arrangement with each anode in direct electrical contact with all adjacent anodes at the fusion end. A dielectric is on the said separated end of each anode wherein the dielectric covers at least an active area of the capacitor. Spacers separate adjacent dielectrics and the interstitial space between the adjacent dielectrics and spacers has a conductive material in therein.
    Type: Grant
    Filed: November 4, 2013
    Date of Patent: February 21, 2017
    Assignee: Kemet Electronics Corporation
    Inventors: Liancai Ning, Qun Ya, Xincheng Jin, Erik Karlsen Reed, Chris Stolarski
  • Stack capacitor having high volumetric efficiency
    Patent number: 9484156
    Abstract: An improved capacitor and method of making an improved capacitor is set forth. The capacitor has planer anodes with each anode comprising a fusion end and a separated end and the anodes are in parallel arrangement with each anode in direct electrical contact with all adjacent anodes at the fusion end. A dielectric is on the said separated end of each anode wherein the dielectric covers at least an active area of the capacitor. Spacers separate adjacent dielectrics and the interstitial space between the adjacent dielectrics and spacers has a conductive material in therein.
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: November 1, 2016
    Assignee: KEMET Electronics Corporation
    Inventors: Liancai Ning, Qun Ya, Xincheng Jin, Erik Karlsen Reed, Chris Stolarski
  • Stack Capacitor Having High Volumetric Efficiency
    Publication number: 20160284477
    Abstract: An improved capacitor and method of making an improved capacitor is set forth. The capacitor has planer anodes with each anode comprising a fusion end and a separated end and the anodes are in parallel arrangement with each anode in direct electrical contact with all adjacent anodes at the fusion end. A dielectric is on the said separated end of each anode wherein the dielectric covers at least an active area of the capacitor. Spacers separate adjacent dielectrics and the interstitial space between the adjacent dielectrics and spacers has a conductive material in therein.
    Type: Application
    Filed: June 1, 2016
    Publication date: September 29, 2016
    Inventors: Liancai Ning, Qun Ya, Xincheng Jin, Erik Karlsen Reed, Chris Stolarski
  • Stack capacitor having high volumetric efficiency
    Patent number: 8675349
    Abstract: An improved capacitor and method of making an improved capacitor is set forth. The capacitor has planer anodes with each anode comprising a fusion end and a separated end and the anodes are in parallel arrangement with each anode in direct electrical contact with all adjacent anodes at the fusion end. A dielectric is on the said separated end of each anode wherein the dielectric covers at least an active area of the capacitor. Spacers separate adjacent dielectrics and the interstitial space between the adjacent dielectrics and spacers has a conductive material in therein.
    Type: Grant
    Filed: December 14, 2011
    Date of Patent: March 18, 2014
    Assignee: Kennet Electronics Corporation
    Inventors: Liancai Ning, Chris Stolarski, Qun Ya
  • Vertical Stack Approach in Low Profile Aluminum Solid Electrolytic Capacitors
    Publication number: 20140055909
    Abstract: An improved capacitor and method of making an improved capacitor is set forth. The capacitor has planer anodes with each anode comprising a fusion end and a separated end and the anodes are in parallel arrangement with each anode in direct electrical contact with all adjacent anodes at the fusion end. A dielectric is on the said separated end of each anode wherein the dielectric covers at least an active area of the capacitor. Spacers separate adjacent dielectrics and the interstitial space between the adjacent dielectrics and spacers has a conductive material in therein.
    Type: Application
    Filed: November 4, 2013
    Publication date: February 27, 2014
    Applicant: Kemet Electronics Corporation
    Inventors: Liancai Ning, Qun Ya, Xincheng Jin, Erik Karlsen Reed, Chris Stolarski
  • STACK CAPACITOR HAVING HIGH VOLUMETRIC EFFICIENCY
    Publication number: 20130155582
    Abstract: An improved capacitor and method of making an improved capacitor is set forth. The capacitor has planer anodes with each anode comprising a fusion end and a separated end and the anodes are in parallel arrangement with each anode in direct electrical contact with all adjacent anodes at the fusion end. A dielectric is on the said separated end of each anode wherein the dielectric covers at least an active area of the capacitor. Spacers separate adjacent dielectrics and the interstitial space between the adjacent dielectrics and spacers has a conductive material in therein.
    Type: Application
    Filed: December 14, 2011
    Publication date: June 20, 2013
    Applicant: Kemet Electronics Corporation
    Inventors: Liancai Ning, Chris Stolarski, Qun Ya