Patents by Inventor Quoc An VU

Quoc An VU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Floating gate memristor device and neuromorphic device having the same
    Patent number: 11742433
    Abstract: Disclosed is a floating gate memristor device comprising: a substrate; a floating gate disposed on the substrate; an insulating layer covering the floating gate; a first electrode including a plurality of control terminals disposed on the insulating layer and spaced apart from each other, wherein the plurality of control terminals vertically overlap the floating gate; a second electrode spaced away from the first electrode, wherein a ground voltage is applied to the second electrode; and a third electrode disposed on the substrate and electrically connected to the floating gate.
    Type: Grant
    Filed: August 24, 2022
    Date of Patent: August 29, 2023
    Assignee: Research & Business Foundation Sungkyunkwan University
    Inventors: Woo Jong Yu, Ui Yeon Won, Quoc An Vu
  • FLOATING GATE MEMRISTOR DEVICE AND NEUROMORPHIC DEVICE HAVING THE SAME
    Publication number: 20230067092
    Abstract: Disclosed is a floating gate memristor device comprising: a substrate; a floating gate disposed on the substrate; an insulating layer covering the floating gate; a first electrode including a plurality of control terminals disposed on the insulating layer and spaced apart from each other, wherein the plurality of control terminals vertically overlap the floating gate; a second electrode spaced away from the first electrode, wherein a ground voltage is applied to the second electrode; and a third electrode disposed on the substrate and electrically connected to the floating gate.
    Type: Application
    Filed: August 24, 2022
    Publication date: March 2, 2023
    Applicant: Research & Business Foundation Sungkyunkwan University
    Inventors: Woo Jong YU, Ui Yeon WON, Quoc An VU
  • Floating gate memristor device and neuromorphic device having the same
    Patent number: 11462647
    Abstract: Disclosed is a floating gate memristor device comprising: a substrate; a floating gate disposed on the substrate; an insulating layer covering the floating gate; a first electrode including a plurality of control terminals disposed on the insulating layer and spaced apart from each other, wherein the plurality of control terminals vertically overlap the floating gate; a second electrode spaced away from the first electrode, wherein a ground voltage is applied to the second electrode; and a third electrode disposed on the substrate and electrically connected to the floating gate.
    Type: Grant
    Filed: July 14, 2020
    Date of Patent: October 4, 2022
    Assignee: Research and Business Foundation Sungkyunkwan University
    Inventors: Woo Jong Yu, Ui Yeon Won, Quoc An Vu
  • FLOATING GATE MEMRISTOR DEVICE AND NEUROMORPHIC DEVICE HAVING THE SAME
    Publication number: 20210020774
    Abstract: Disclosed is a floating gate memristor device comprising: a substrate; a floating gate disposed on the substrate; an insulating layer covering the floating gate; a first electrode including a plurality of control terminals disposed on the insulating layer and spaced apart from each other, wherein the plurality of control terminals vertically overlap the floating gate; a second electrode spaced away from the first electrode, wherein a ground voltage is applied to the second electrode; and a third electrode disposed on the substrate and electrically connected to the floating gate.
    Type: Application
    Filed: July 14, 2020
    Publication date: January 21, 2021
    Applicant: Research & Business Foundation Sungkyunkwan University
    Inventors: Woo Jong YU, Ui Yeon WON, Quoc An VU