Patents by Inventor Quzhi He

Quzhi He has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistor having an improved sidewall gate structure and method of construction
    Patent number: 6307230
    Abstract: A transistor having an improved sidewall gate structure and method of construction is provided. The improved sidewall gate structure may include a semiconductor substrate (12) having a channel region (20). A gate insulation (36) may be adjacent the channel region (20) of the semiconductor substrate (12). A gate (38) may be formed adjacent the gate insulation (36). A sidewall insulation body (28) may be formed adjacent a portion of the gate (38). The sidewall insulation body (28) is comprised of a silicon oxynitride material. An epitaxial layer (30) may be formed adjacent a portion of the sidewall insulation body (28) and adjacent the semiconductor substrate (12) substantially outward of the channel region (20). A buffer layer (32) may be formed adjacent a portion of the sidewall insulation body (28) and adjacent the epitaxial layer (30).
    Type: Grant
    Filed: October 12, 1999
    Date of Patent: October 23, 2001
    Assignee: Texas Instruments Incorporated
    Inventors: Amitava Chatterjee, Wei William Lee, Greg A. Hames, Quzhi He, Iqbal Ali, Maureen A. Hanratty
  • Method of forming a transistor having an improved sidewall gate structure
    Patent number: 6117741
    Abstract: A transistor having an improved sidewall gate structure and method of construction is provided. The improved sidewall gate structure may include a semiconductor substrate (12) having a channel region (20). A gate insulation (36) may be adjacent the channel region (20) of the semiconductor substrate (12). A gate (38) may be formed adjacent the gate insulation (36). A sidewall insulation body (28) may be formed adjacent a portion of the gate (38). The sidewall insulation body (28) is comprised of a silicon oxynitride material. An epitaxial layer (30) may be formed adjacent a portion of the sidewall insulation body (28) and adjacent the semiconductor substrate (12) substantially outward of the channel region (20). A buffer layer (32) may be formed adjacent a portion of the sidewall insulation body (28) and adjacent the epitaxial layer (30).
    Type: Grant
    Filed: January 5, 1999
    Date of Patent: September 12, 2000
    Assignee: Texas Instruments Incorporated
    Inventors: Amitava Chatterjee, Wei William Lee, Greg A. Hames, Quzhi He, Iqbal Ali, Maureen A. Hanratty