Abstract: A method of forming an ultraviolet (UV) photodetector includes forming an epitaxial semiconductor metal oxide layer on a substrate, wherein the forming includes using an O2 flow rate and applied RF plasma power which together provide a ratio of O• (oxygen radicals) to O+ of at least 1.5. Metal fingers are formed on a surface of the semiconductor metal oxide layer. The metal fingers can include a multi-layer stack including a metal having a 25° C. work function <4 eV positioned between an adhesion layer and an oxidation resistant metal capping layer. The semiconductor metal oxide layer can be Zn1-xMgxO wherein 0<x<1.

Abstract: A photodetector (PD) includes a substrate, and a ZnO nucleation layer on the substrate. A wurtzite MgxZn1-xO layer is on the ZnO nucleation layer, wherein x is a mole fraction between 0 and 0.62. A level of crystallinity of the wurtzite MgxZn1-xO layer characterized by x-ray diffraction with a deconvolution of a triple-crystal ? rocking curve of a ZnO (0002) peak has a narrow component with a full width at half maximum (FWHM) less than or equal to (?) 20 arc/s. First and second spaced apart electrodes are on a surface of the wurtzite MgxZn1-xO layer. The mole fraction x can be between 0.20 and 0.46, including between 0.37 and 0.46, and provide a PD responsivity of at least 20 A/W at 5V in the solar blind region from 200 nm to 290 nm.

Abstract: A photodetector (PD) includes a substrate, and a ZnO nucleation layer on the substrate. A wurtzite MgxZn1-xO layer is on the ZnO nucleation layer, wherein x is a mole fraction between 0 and 0.62. A level of crystallinity of the wurtzite MgxZn1-xO layer characterized by x-ray diffraction with a deconvolution of a triple-crystal ? rocking curve of a ZnO (0002) peak has a narrow component with a full width at half maximum (FWHM) less than or equal to (?) 20 arc/s. First and second spaced apart electrodes are on a surface of the wurtzite MgxZn1-xO layer. The mole fraction x can be between 0.20 and 0.46, including between 0.37 and 0.46, and provide a PD responsivity of at least 20 A/W at 5V in the solar blind region from 200 nm to 290 nm.

Abstract: A method of forming an ultraviolet (UV) photodetector includes forming an epitaxial semiconductor metal oxide layer on a substrate, wherein the forming includes using an O2 flow rate and applied RF plasma power which together provide a ratio of O• (oxygen radicals) to O+ of at least 1.5. Metal fingers are formed on a surface of the semiconductor metal oxide layer. The metal fingers can include a multi-layer stack including a metal having a 25° C. work function <4 eV positioned between an adhesion layer and an oxidation resistant metal capping layer. The semiconductor metal oxide layer can be Zn1-xMgxO wherein 0<x<1.