Abstract: Thin bidirectional bipolar junction transistor (BJT) devices and methods for fabricating thin bidirectional BJT devices. The method includes forming a first base region and a first emitter/collector region on a first side of a first thick semiconductor wafer. The method also includes removing a portion of the first thick semiconductor wafer to produce a first thin semiconductor wafer. The method further includes forming a second base region and a second emitter/collector region on a second side of the first thin semiconductor wafer opposite the first side. The method also includes producing a second thin semiconductor wafer. The method further includes bonding the first thin semiconductor wafer to the second thin semiconductor wafer.

Abstract: Operating a PNP double-sided double-base bipolar junction transistor (DSDB BJT). One example is a method of operating a DSDB-BJT, the method comprising: conducting a first load current from an upper terminal of the power module to an upper base of the transistor, through the transistor, and from a lower base to a lower terminal of the power module; and then responsive assertion of a first interrupt signal interrupting the first load current from the lower base to the lower terminal by opening a lower-main FET and commutating a first shutoff current through a lower collector-emitter of the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.