Abstract: An ultrasound system comprises a probe including an array of CMUT (capacitive micromachined ultrasound transducer) cells. Each cell comprises a substrate carrying a first electrode. The substrate is spatially separated from a flexible membrane including a second electrode. The flexible membrane comprises a mass element in a central region. The system also comprises a voltage supply adapted to, in a transmission mode provide, the respective electrodes with a bias voltage driving the CMUT cells into a collapsed state and a stimulus voltage having a set frequency for resonating the flexible membrane of the CMUT cells in said collapsed state The mass element of the CMUT cells forces the central region of the flexible membrane to remain in the collapsed state during said resonating. A pulse transmission method for such a system is also disclosed.

Abstract: The present invention relates to an ultrasound transducer device comprising at least one cMUT cell (30) for transmitting and/or receiving ultrasound waves, the cMUT cell (30) comprising a cell membrane (30a) and a cavity (30b) underneath the cell membrane. The device further comprises a substrate (10) having a first side (10a) and a second side (10b), the at least one cMUT cell (30) arranged on the first side (10a) of the substrate (10). The substrate (10) comprises a substrate base layer (12) and a plurality of adjacent trenches (17a) extending into the substrate (10) in a direction orthogonal to the substrate sides (10a, 10b), wherein spacers (12a) are each formed between adjacent trenches (17a). The substrate (10) further comprises a connecting cavity (17b) which connects the trenches (17a) and which extends in a direction parallel to the substrate sides (10a, 10b), the trenches (17a) and the connecting cavity (17b) together forming a substrate cavity (17) in the substrate (10).

Abstract: An ultrasound system is disclosed comprising a probe (10) including an array (110) of CMUT (capacitive micromachined ultrasound transducer) cells (100), each cell comprising a substrate (112) carrying a first electrode (122) of an electrode arrangement, the substrate being spatially separated from a flexible membrane (114) including a second electrode (120) of said electrode arrangement by a gap (118), the flexible membrane comprising a mass element (140) in a central region (17, 17?); and a voltage supply (45) coupled to said probe and adapted to, in a transmission mode of the ultrasound system, provide the respective electrode arrangements of at least some of the CMUT cells with a voltage including a bias voltage component driving the at least some of the CMUT cells into a collapsed state in which a central part of the flexible membrane contacts the substrate, said central part including the central region; and a stimulus component having a set frequency for resonating the respective flexible membranes of t

Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

Abstract: Disclosed is a method of manufacturing a device (1) comprising a plurality of micro-machined ultrasonic transducer cells (100) in a first region (10) on a substrate (30) and a plurality of interconnects (200) in a second region (20) on said substrate, each of said cells comprising a first electrode (110) separated by a cavity (130) from a second electrode (120) supported by a membrane (140), the method comprising forming a dielectric layer stack (11, 13, 15, 17) over the substrate, said dielectric layer stack defining the respective membranes of the micro-machined ultrasonic transducers in the first region; reducing the thickness of the dielectric layer stack in the second region by partially etching away the dielectric layer stack in the second region; etching a plurality of trenches (22) in the reduced thickness portion of the dielectric layer stack, each of said trenches exposing a conductive contact (210) in the second region; and filling said trenches with a conductive material.

Abstract: The present invention relates to an ultrasound transducer device comprising at least one cMUT cell (30) for transmitting and/or receiving ultrasound waves, the cMUT cell (30) comprising a cell membrane (30a) and a cavity (30b) underneath the cell membrane. The device further comprises a substrate (10) having a first side (10a) and a second side (10b), the at least one cMUT cell (30) arranged on the first side (10a) of the substrate (10). The substrate (10) comprises a substrate base layer (12) and a plurality of adjacent trenches (17a) extending into the substrate (10) in a direction orthogonal to the substrate sides (10a, 10b), wherein spacers (12a) are each formed between adjacent trenches (17a). The substrate (10) further comprises a connecting cavity (17b) which connects the trenches (17a) and which extends in a direction parallel to the substrate sides (10a, 10b), the trenches (17a) and the connecting cavity (17b) together forming a substrate cavity (17) in the substrate (10).

Abstract: The present invention relates to a method of manufacturing a capacitive micro- machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

Abstract: The present invention relates to an ultrasound transducer device comprising at least one cMUT cell (30) for transmitting and/or receiving ultrasound waves, the cMUT cell (30) comprising a cell membrane (30a) and a cavity (30b) underneath the cell membrane. The device further comprises a substrate (10) having a first side (10a) and a second side (10b), the at least one cMUT cell (30) arranged on the first side (10a) of the substrate (10). The substrate (10) comprises a substrate base layer (12) and a plurality of adjacent trenches (17a) extending into the substrate (10) in a direction orthogonal to the substratesides (10a, 10b), wherein spacers (12a) are each formed between adjacent trenches (17a). The substrate (10) further comprises a connecting cavity (17b) which connects the trenches (17a) and which extends in a direction parallel to the substrate sides (10a, 10b), the trenches (17a) and the connecting cavity (17b) together forming a substrate cavity (17) in the substrate (10).

Abstract: Disclosed is a method of manufacturing a device (1) comprising a plurality of micro-machined ultrasonic transducer cells (100) in a first region (10) on a substrate (30) and a plurality of interconnects (200) in a second region (20) on said substrate, each of said cells comprising a first electrode (100) separated by a cavity (130) from a second electrode (120) supported by a membrane (140), the method comprising forming a dielectric layer stack (11, 13, 15, 17) over the substrate, said dielectric layer stack defining the respective membranes of the micro-machined ultrasonic transducers in the first region; reducing the thickness of the dielectric layer stack in the second region by partially etching away the dielectric layer stack in the second region; etching a plurality of trenches (22) in the reduced thickness portion of the dielectric layer stack, each of said trenches exposing a conductive contact (210) in the second region; and filling said trenches with a conductive material.

Abstract: The present invention relates to a transducer (11) comprising a membrane (31) configured to change shape in response to a force, the membrane (31) having a first major surface (16) and a second major surface (17), a piezoelectric layer (18) formed over the first major surface (16) of the membrane (31), the piezoelectric layer (18) having an active portion, first and second electrodes (19) in contact with the piezoelectric layer (18), wherein an electric field between the first and second electrodes (19) determines the mechanical movement of the piezoelectric layer (18), support structures (40) at the second major surface (17) of the membrane (15) on adjacent sides of the active portion of the piezoelectric layer (18), at least part of the support structures (40) forming walls perpendicular, or at least not parallel, to the second major surface (17) of the membrane (31), so as to form a trench (41) of any shape underlying the active portion, so that an ultrasound transducer is obtained with a high output pr

Abstract: The present invention relates to a transducer (11) comprising—a membrane (31) configured to change shape in response to a force, the membrane (31) having a first major surface (16) and a second major surface (17), —a piezoelectric layer (18) formed over the first major surface (16) of the membrane (31), the piezoelectric layer (18) having an active portion, —first and second electrodes (19) in contact with the piezoelectric layer (18), wherein an electric field between the first and second electrodes (19) determines the mechanical movement of the piezoelectric layer (18), —support structures (40) at the second major surface (17) of the membrane (15) on adjacent sides of the active portion of the piezoelectric layer (18), at least part of the support structures (40) forming walls perpendicular, or at least not parallel, to the second major surface (17) of the membrane (31), so as to form a trench (41) of any shape underlying the active portion, so that an ultrasound transducer is obtained with a high output pr

Abstract: The present invention relates to a through-wafer via device (10) comprising a wafer (12) made of a wafer material and having a first wafer surface (12a) and a second wafer surface (12b) opposing the first wafer surface (12a). The through-wafer via device (10) further comprises a plurality of side by side first trenches (14) provided with a conductive material and extending from the first wafer surface (12a) into the wafer (12) such that a plurality of spacers (16) of the wafer material are formed between the first trenches (14). The through-wafer via device (10) further comprises a second trench (18) provided with the conductive material and extending from the second wafer surface (12b) into the wafer (12), the second trench (18) being connected to the first trenches (14).

Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

Abstract: The present invention relates to a method of manufacturing a capacitive micro- machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

Abstract: The present invention relates to an ultrasound transducer device comprising at least one cMUT cell (30) for transmitting and/or receiving ultrasound waves, the cMUT cell (30) comprising a cell membrane (30a) and a cavity (30b) underneath the cell membrane. The device further comprises a substrate (10) having a first side (10a) and a second side (10b), the at least one cMUT cell (30) arranged on the first side (10a) of the substrate (10). The substrate (10) comprises a substrate base layer (12) and a plurality of adjacent trenches (17a) extending into the substrate (10) in a direction orthogonal to the substratesides (10a, 10b), wherein spacers (12a) are each formed between adjacent trenches (17a). The substrate (10) further comprises a connecting cavity (17b) which connects the trenches (17a) and which extends in a direction parallel to the substrate sides (10a, 10b), the trenches (17a) and the connecting cavity (17b) together forming a substrate cavity (17) in the substrate (10).

Abstract: The present invention relates to a through-wafer via device (10) comprising a wafer (12) made of a wafer material and having a first wafer surface (12a) and a second wafer surface (12b) opposing the first wafer surface (12a). The through-wafer via device (10) further comprises a plurality of side by side first trenches (14) provided with a conductive material and extending from the first wafer surface (12a) into the wafer (12) such that a plurality of spacers (16) of the wafer material are formed between the first trenches (14). The through-wafer via device (10) further comprises a second trench (18) provided with the conductive material and extending from the second wafer surface (12b) into the wafer (12), the second trench (18) being connected to the first trenches (14).

Abstract: The present invention relates to a transducer (11) comprising—a membrane (31) configured to change shape in response to a force, the membrane (31) having a first major surface (16) and a second major surface (17),—a piezoelectric layer (18) formed over the first major surface (16) of the membrane (31), the piezoelectric layer (18) having an active portion,—first and second electrodes (19) in contact with the piezoelectric layer (18), wherein an electric field between the first and second electrodes (19) determines the mechanical movement of the piezoelectric layer (18),—support structures (40) at the second major surface (17) of the membrane (15) on adjacent sides of the active portion of the piezoelectric layer (18), at least part of the support structures (40) forming walls perpendicular, or at least not parallel, to the second major surface (17) of the membrane (31), so as to form a trench (41) of any shape underlying the active portion, so that an ultrasound transducer is obtained with a high output press

Abstract: The invention relates to a membrane system which is particular suitable for oxygen generation. It comprises a membrane (14), and a porous substrate (12) for supporting the membrane (14), wherein the substrate (12) comprises pillars (15) and defined channels (16) for bringing a gas in controlled contact with the membrane (14). This membrane system (10) allows a gas flux and is furthermore applicable for small and light devices.