Abstract: An electron beam source is provided that includes a vessel forming a chamber, a cathode disposed within the chamber, the cathode comprising a low dimensional electrically conductive material having an anisotropic restricted thermal conductivity, an electrode disposed in the chamber, the electrode being connectable to a power source for applying a positive voltage to the electrode relative to the cathode for accelerating free electrons away from the cathode to form an electron beam when the cathode is illuminated by electromagnetic (EM) radiation such that the cathode thermionically emits free electrons, and an electron emission window in the chamber for passing a generated electron beam out of the chamber. An electron microscope that incorporates the electron beam source is also provided.

Abstract: An electron beam source is provided that includes a vessel forming a chamber, a cathode disposed within the chamber, the cathode comprising a low dimensional electrically conductive material having an anisotropic restricted thermal conductivity, an electrode disposed in the chamber, the electrode being connectable to a power source for applying a positive voltage to the electrode relative to the cathode for accelerating free electrons away from the cathode to form an electron beam when the cathode is illuminated by electromagnetic (EM) radiation such that the cathode thermionically emits free electrons, and an electron emission window in the chamber for passing a generated electron beam out of the chamber. An electron microscope that incorporates the electron beam source is also provided.

Abstract: A permanently sealed vacuum tube is used to provide the electrons for an electron microscope. This advantageously allows use of low vacuum at the sample, which greatly simplifies the overall design of the system. There are two main variations. In the first variation, imaging is provided by mechanically scanning the sample. In the second variation, imaging is provided by point projection. In both cases, the electron beam is fixed and does not need to be scanned during operation of the microscope. This also greatly simplifies the overall system.

Abstract: A permanently sealed vacuum tube is used to provide the electrons for an electron microscope. This advantageously allows use of low vacuum at the sample, which greatly simplifies the overall design of the system. There are two main variations. In the first variation, imaging is provided by mechanically scanning the sample. In the second variation, imaging is provided by point projection. In both cases, the electron beam is fixed and does not need to be scanned during operation of the microscope. This also greatly simplifies the overall system.

Abstract: A photo-emitter x-ray source is provided that includes a photocathode electron source, a laser light source, where the laser light source illuminates the photocathode electron source to emit electrons, and an X-ray target, where the emitted electrons are focused on the X-ray target, where the X-ray target emits X-rays. The photocathode electron source can include alkali halides (such as CsBr and CsI), semiconductors (such as GaAs, InP), and theses materials modified with rare Earth element (such as Eu) doping, electron beam bombardment, and X-ray irradiation, and has a form factor that includes planar, patterned, or optically patterned. The X-ray target includes a material such as tungsten, copper, rhodium or molybdenum.

Abstract: A method of achieving heightened quantum efficiencies and extended photocathode lifetimes is provided that includes using an electron beam bombardment to activate color centers in a CsBr film of a photocathode, and using a laser source for pumping electrons in the color centers of the photocathode.

Abstract: A method of achieving heightened quantum efficiencies and extended photocathode lifetimes is provided that includes using an electron beam bombardment to activate color centers in a CsBr film of a photocathode, and using a laser source for pumping electrons in the color centers of the photocathode.

Abstract: A photo-emitter x-ray source is provided that includes a photocathode electron source, a laser light source, where the laser light source illuminates the photocathode electron source to emit electrons, and an X-ray target, where the emitted electrons are focused on the X-ray target, where the X-ray target emits X-rays. The photocathode electron source can include alkali halides (such as CsBr and CsI), semiconductors (such as GaAs, InP), and theses materials modified with rare Earth element (such as Eu) doping, electron beam bombardment, and X-ray irradiation, and has a form factor that includes planar, patterned, of optically patterned. The X-ray target includes a material such as tungsten, copper, rhodium or molybdenum. The laser light source is pulsed or steered according to light modulators that can include acousto-optics, mode-locking, micro-mirror array, and liquid crystals, and includes a nano-aperture or nano-particle arrays, where the nano-aperture is a C-aperture or a circular aperture.

Abstract: A system and sensor for measuring, inspecting, characterizing, evaluating and/or controlling optical lithographic equipment and/or materials used therewith, for example, photomasks. In one embodiment, the system and sensor measures, collects and/or detects an aerial image (or portion thereof) produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situ—that is, the aerial image at the wafer plane produced, in part, by a production-type photomask (i.e., a wafer having integrated circuits formed therein/thereon) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits. A processing unit, coupled to the image sensor unit, may generate image data which is representative of the aerial image by, in one embodiment, interleaving the intensity of light sampled by each sensor cell at the plurality of location of the platform.

Abstract: A semiconductor source of emission electrons which uses a target of a wide bandgap semiconductor having a target thickness measured from an illumination surface to an emission surface. The semiconductor source is equipped with an arrangement for producing and directing a beam of seed electrons at the illumination surface and a mechanism for controlling the energy of the seed electrons such that the energy of the seed electrons is sufficient to generate electron-hole pairs in the target. A fraction of these electron-hole pairs supply the emission electrons. Furthermore, the target thickness and the energy of the seed electrons are optimized such that the emission electrons at the emission surface are substantially thermalized. The emission of electrons is further facilitated by generating negative electron affinity at the emission surface. The source of the invention can take advantage of diamond, AlN, BN, Ga1-yAlyN and (AlN)x(SiC)1-x, wherein 0?y?1 and 0.2?x?1 and other wide bandgap semiconductors.

Abstract: A system and sensor for measuring, inspecting, characterizing, evaluating and/or controlling optical lithographic equipment and/or materials used therewith, for example, photomasks. In one embodiment, the system and sensor measures, collects and/or detects an aerial image (or portion thereof) produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situ—that is, the aerial image at the wafer plane produced, in part, by a production-type photomask (i.e., a wafer having integrated circuits formed therein/thereon) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits. A processing unit, coupled to the image sensor unit, may generate image data which is representative of the aerial image by, in one embodiment, interleaving the intensity of light sampled by each sensor cell at the plurality of location of the platform.

Abstract: A system and sensor for measuring, inspecting, characterizing, evaluating and/or controlling optical lithographic equipment and/or materials used therewith, for example, photomasks. In one embodiment, the system and sensor measures, collects and/or detects an aerial image (or portion thereof) produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situ—that is, the aerial image at the wafer plane produced, in part, by a production-type photomask (i.e., a wafer having integrated circuits formed therein/thereon) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits. A processing unit, coupled to the image sensor unit, may generate image data which is representative of the aerial image by interleaving the intensity of light sampled by each sensor cell at the plurality of location of the platform.

Abstract: A system to sense an aerial image produced by optical equipment used in, for example, semiconductor fabrication. In one embodiment, the system includes a photo-electron emission device which, in response to an aerial image projected thereon, emits electrons in a pattern corresponding to the light intensity distribution produced by the aerial image. Electron optics provides an enlarged pattern of the pattern in which the electrons are emitted. A sensing unit senses the enlarged pattern. In another embodiment, the system employs a photo-conducting layer to project the aerial image thereon. The photo-conducting layer, in response to the projection of the aerial image thereon, produces local charge depletion corresponding to the light intensity distribution. A steering device delivers electrons to the photo-conducting layer to produce local re-charging currents in proportion to the local charge depletion. A pattern corresponding to the aerial image may be obtained from the re-charging currents.

Abstract: In one aspect, the present invention is a technique of, and a system and sensor for measuring, inspecting, characterizing and/or evaluating optical lithographic equipment, methods, and/or materials used therewith, for example, photomasks. In one embodiment, the system, sensor and technique measures, collects and/or detects an aerial image (or portion thereof) produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situ—that is, the aerial image at the wafer plane produced, in part, by a production-type photomask (i.e., a wafer having integrated circuits formed during the integrated circuit fabrication process) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits.

Abstract: In one aspect, the present invention is a technique of, and a system and sensor for measuring, inspecting, characterizing and/or evaluating optical lithographic equipment, methods, and/or materials used therewith, for example, photomasks. In one embodiment of this aspect of the invention, the system, sensor and/or technique measures, collects and/or detects an aerial image produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situ—that is, the aerial image at the wafer plane produced, in part, by a production-type photomask (i.e., a wafer having integrated circuits formed during the integrated circuit fabrication process) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits.

Abstract: In one aspect, the present invention is a technique of, and a system and sensor for measuring, inspecting, characterizing and/or evaluating optical lithographic equipment, methods, and/or materials used therewith, for example, photomasks. In one embodiment, the system, sensor and technique measures, collects and/or detects an aerial image produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situ—that is, the aerial image at the wafer plane produced, in part, by a product-type photomask (i.e., a wafer having integrated circuits formed during the integrated circuit fabrication process) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits.

Abstract: In one aspect, the present invention is a technique of, and a system and sensor for measuring, inspecting, characterizing and/or evaluating optical lithographic equipment, methods, and/or materials used therewith, for example, photomasks. In one embodiment, the system, sensor and technique measures, collects and/or detects an aerial image produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situ—that is, the aerial image at the wafer plane produced, in part, by a product-type photomask (i.e., a wafer having integrated circuits formed during the integrated circuit fabrication process) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits.

Abstract: In one aspect, the present invention is a technique of, and a system and sensor for measuring, inspecting, characterizing and/or evaluating optical lithographic equipment, methods, and/or materials used therewith, for example, photomasks. In one embodiment of this aspect of the invention, the system, sensor and technique measures, collects and/or detects an aerial image produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situ—that is, the aerial image at the wafer plane produced, in part, by a product-type photomask (i.e., a wafer having integrated circuits formed during the integrated circuit fabrication process) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits.

Abstract: In one aspect, the present invention is a technique of, and a system and sensor for measuring, inspecting, characterizing and/or evaluating optical lithographic equipment, methods, and/or materials used therewith, for example, photomasks. In one embodiment, the system, sensor and technique measures, collects and/or detects an aerial image produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situ—that is, the aerial image at the wafer plane produced, in part, by a product-type photomask (i.e., a wafer having integrated circuits formed during the integrated circuit fabrication process) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits.

Abstract: In one aspect, the present invention is a technique of, and a system and sensor for measuring, inspecting, characterizing and/or evaluating optical lithographic equipment, methods, and/or materials used therewith, for example, photomasks. In one embodiment, the system, sensor and technique measures, collects and/or detects an aerial image produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situ—that is, the aerial image at the wafer plane produced, in part, by a product-type photomask (i.e., a wafer having integrated circuits formed during the integrated circuit fabrication process) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits.