Patents by Inventor R. Jennhwa Fu

R. Jennhwa Fu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5189679
    Abstract: A semiconductor laser having increased reliability and enhanced high temperature operation. The device is based upon GaAs/AlGaAs, and comprises a quantum well active layer that is strained by the inclusion of the indium. The rear facet of the device has a high reflectivity coating, and the front facet reflectivity and cavity length are adjusted based upon the required output power. For high output power at high temperature, long cavity lengths and low front facet reflectivities are used. For low current operation and low output power at high temperature, shorter cavities and higher front facet reflectivities are used. The lasers are capable of reliably operating at temperatures up to and in excess of 100.degree. C.
    Type: Grant
    Filed: September 6, 1991
    Date of Patent: February 23, 1993
    Assignee: The Boeing Company
    Inventors: Pamela L. Derry, Chi-Shain Hong, Eric Y. Chan, Luis Figueroa, R. Jennhwa Fu