Patents by Inventor R. Kern

R. Kern has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Formation of Ohmic contacts in III-nitride light emitting devices
    Publication number: 20050167693
    Abstract: P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 ? cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
    Type: Application
    Filed: March 30, 2005
    Publication date: August 4, 2005
    Inventors: Werner Goetz, Michael Camras, Changhua Chen, Xiaoping Chen, Gina Christenson, R. Kern, Chihping Kuo, Paul Martin, Daniel Steigerwald