Abstract: The present disclosure provides various methods for removing a resist layer from a wafer. An exemplary method includes performing an etching process to remove a resist layer from a wafer. During the etching process, a first heating process is performed to effect a first graded thermal profile in the resist layer, the first graded thermal profile having a temperature that increases along a direction perpendicular to the wafer. Further during the etching process, and after performing the first heating process, a second heating process is performed to effect a second graded thermal profile in the resist layer, the second graded thermal profile having a temperature that decreases along the direction perpendicular to the wafer. In an example, the method further includes, before performing the etching process, performing an ion implantation process to the wafer using the resist layer as a mask.