Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

Abstract: Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal-group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor.

Abstract: An SOI wafer contains a compressively stressed buried insulator structure. In one example, the stressed buried insulator (BOX) may be formed on a host wafer by forming silicon oxide, silicon nitride and silicon oxide layers so that the silicon nitride layer is compressively stressed. Wafer bonding provides the surface silicon layer over the stressed insulator layer. Preferred implementations of the invention form MOS transistors by etching isolation trenches into a preferred SOI substrate having a stressed BOX structure to define transistor active areas on the surface of the SOI substrate. Most preferably the trenches are formed deep enough to penetrate through the stressed BOX structure and some distance into the underlying silicon portion of the substrate. The overlying silicon active regions will have tensile stress induced due to elastic edge relaxation.

Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

Abstract: An SOI wafer contains a compressively stressed buried insulator structure. In one example, the stressed buried insulator (BOX) may be formed on a host wafer by forming silicon oxide, silicon nitride and silicon oxide layers so that the silicon nitride layer is compressively stressed. Wafer bonding provides the surface silicon layer over the stressed insulator layer. Preferred implementations of the invention form MOS transistors by etching isolation trenches into a preferred SOI substrate having a stressed BOX structure to define transistor active areas on the surface of the SOI substrate. Most preferably the trenches are formed deep enough to penetrate through the stressed BOX structure and some distance into the underlying silicon portion of the substrate. The overlying silicon active regions will have tensile stress induced due to elastic edge relaxation.

Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

Abstract: An SOI wafer contains a compressively stressed buried insulator structure. In one example, the stressed buried insulator (BOX) may be formed on a host wafer by forming silicon oxide, silicon nitride and silicon oxide layers so that the silicon nitride layer is compressively stressed. Wafer bonding provides the surface silicon layer over the stressed insulator layer. Preferred implementations of the invention form MOS transistors by etching isolation trenches into a preferred SOI substrate having a stressed BOX structure to define transistor active areas on the surface of the SOI substrate. Most preferably the trenches are formed deep enough to penetrate through the stressed BOX structure and some distance into the underlying silicon portion of the substrate. The overlying silicon active regions will have tensile stress induced due to elastic edge relaxation.

Abstract: The present invention relates to creating an active layer of strained semiconductor using a combination of buried and sacrificial stressors. That is, a process can strain an active semiconductor layer by transferring strain from a stressor layer buried below the active semiconductor layer and by transferring strain from a sacrificial stressor layer formed above the active semiconductor layer. As an example, the substrate may be silicon, the buried stressor layer may be silicon germanium, the active semiconductor layer may be silicon and the sacrificial stressor layer may be silicon germanium. Elastic edge relaxation is preferably used to efficiently transfer strain to the active layer.

Abstract: The process forms a FET with a channel region that has in plane compressive stress in one direction and in plane tensile stress in a perpendicular direction. The process deposits a germanium silicon sacrificial stressor layer on a silicon substrate so that the germanium silicon is in a state of compressive stress. Etching trenches forms silicon pillars covered by the stressor layer and transfers tensile strain to the upper portion of the pillar. The process fills the trenches with stiff insulating material to maintain the strain in the pillar and etching removes the stressor layer. More etching creates recesses on either side of a channel region in the upper portion of the pillar. Doped germanium silicon layers fill the recesses, apply lateral compressive stress to the pillar's channel region and act as source and drain electrodes. A gate is formed above the strained channel region.

Abstract: The present invention relates to creating an active layer of strained semiconductor using a combination of buried and sacrificial stressors. That is, a process can strain an active semiconductor layer by transferring strain from a stressor layer buried below the active semiconductor layer and by transferring strain from a sacrificial stressor layer formed above the active semiconductor layer. As an example, the substrate may be silicon, the buried stressor layer may be silicon germanium, the active semiconductor layer may be silicon and the sacrificial stressor layer may be silicon germanium. Elastic edge relaxation is preferably used to efficiently transfer strain to the active layer.

Abstract: The present invention relates to creating an active layer of strained semiconductor using a combination of buried and sacrificial stressors. That is, a process can strain an active semiconductor layer by transferring strain from a stressor layer buried below the active semiconductor layer and by transferring strain from a sacrificial stressor layer formed above the active semiconductor layer. As an example, the substrate may be silicon, the buried stressor layer may be silicon germanium, the active semiconductor layer may be silicon and the sacrificial stressor layer may be silicon germanium. Elastic edge relaxation is preferably used to efficiently transfer strain to the active layer.

Abstract: A CDMA radio system uses an adaptive filter in a receiver to mitigate multipath radio propagation and to filter out interfering signals. Characteristics of an initial stage of the filter preferably are determined by cross correlation of a generated pilot signal and the input signal with the integration of the correlation performed over a time period selected to be an integral number of symbol periods. The integration causes the portions of the cross correlation corresponding to the user subchannels to average substantially to zero, so that the pilot channel signal correlation is the primary contribution to the signal used to characterize the channel to establish the coefficients of the adaptive filter for the receiver.

Abstract: The process uses a sacrificial stressor layer to provide tensile strained surface regions for bulk silicon or silicon on insulator (SOI) substrates. The process deposits a sacrificial layer of silicon germanium on the surface of the substrate and then patterns the workpiece to form trenches extending through the silicon germanium stressor layer into the semiconductor substrate. The process fills the trenches with insulating materials and then removes the silicon germanium stressor layer, for example using wet etching, leaving a strained silicon or SOI substrate with a pattern of shallow trench isolation structures. The trench fill material is selected to stress the regions of silicon between the trenches to provide a tensile strained surface region to the semiconductor substrate. Such a strained semiconductor surface region can have improved mobility properties and so is advantageous for forming devices such as MOSFETs.

Abstract: Source and/or drain regions of a transistor are first doped with an appropriate dopant and a metal is subsequently deposited. After heating, a silicide will displace the dopant, creating an increased density of dopants at the border of the silicided region. The dopants that are adjacent to or in the gate region of the device will form a thin layer. The silicide or other reactant material is then removed and replaced with a desired source/drain material, while leaving the layer of dopant immediately adjacent to the newly deposited source/drain material.

Abstract: A servo control system and method controls systems at least partially on the basis of an observable variable that has an absolute value functional relationship with the controlled variable and does not change sign for positive and negative variations from a nominal value. The control system and method find particularly advantageous application in magnetic storage hard disk drive systems because the system allows such hard disk drives to perform servo operations such as track following on the basis of the data signals being read from the track. A particularly useful source of the absolute value observable variable is a read channel chip that performs decoding of data recovered from the disk. Error measures are developed as the data signals from the disk are processed and decoded, including error measures from the slicer used in an adaptive equalization process and from the data decoder, which may be a Viterbi decoder.

Abstract: Apparatus using information about the extent of errors in sensed data for performing as a control function at least one of adjusting the position of a magnetic head to improve alignment relative to a track and selecting from two or more data signals a data signal having the least amount of errors is shown. The apparatus uses information about the extent of errors to perform a control function for reproducing the data stored in predetermined storage locations in a storage media. The apparatus positions a transducer for sensing from predetermined storage locations stored data containing at least one constraint. The transducer generates a first signal representative of the data containing at least one constraint stored in the sensed data and any errors introduced into the sensed data during the sensing.

Abstract: A device using information about the extent of errors in a signal is shown. The device includes an input signal containing at least one constraint and any errors introduced into the input signal during transmission and/or sensing. A detector receives and is responsive to the input signal for generating an error signal containing information about the extent of error and for extracting an information signal from the input signal as an output signal. A control device is operatively coupled to the detector for receiving and responding to the error signal containing information about the extent of errors for generating a control signal used to reduce the extent of errors in the input signal based on information about the extent of errors contained in the error signal. A method for using information about the extent of errors is shown.

Abstract: Apparatus using information about the extent of errors in sensed data for performing as a control function at least one of adjusting the position of a magnetic head to improve alignment relative to a track and selecting from two or more data signals a data signal having the least amount of errors is shown. The apparatus uses information about the extent of errors to perform a control function for reproducing the data stored in predetermined storage locations in a storage media. The apparatus positions a transducer for sensing from predetermined storage locations stored data containing at least one constraint. The transducer generates a first signal representative of the data containing at least one constraint stored in the sensed data and any errors introduced into the sensed data during the sensing.

Abstract: Apparatus using information about the extent of errors in sensed data for performing as a control function at least one of adjusting the position of a magnetic head to improve alignment relative to a track and selecting from two or more data signals a data signal having the least amount of errors is shown. The apparatus uses information about the extent of errors to perform a control function for reproducing the data stored in predetermined storage locations in a storage media. The apparatus positions a transducer for sensing from predetermined storage locations stored data containing at least one constraint. The transducer generates a first signal representative of the data containing at least one constraint stored in the sensed data and any errors introduced into the sensed data during the sensing.