Patents by Inventor R. Y. Yang

R. Y. Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus and method for controlling wafer temperature in a plasma etcher
    Patent number: 6635580
    Abstract: An apparatus for controlling wafer temperature in a plasma etcher during a plasma-on state and a method for using such apparatus are disclosed. In the apparatus, an additional temperature sensor for sensing the wafer backside temperature and a second flow control valve of a mass flow controller are utilized such that the second flow control valve may be opened to increase the flow of cooling gas through the wafer backside when a temperature rise is detected by the temperature sensor. When the wafer temperature detected is too high, i.e., higher than 65° C., the second flow control valve is opened to increase the flow of helium cooling gas from a nominal rate of 13 sccm by at least 50%. When the temperature of the wafer detected is below 65° C., the flow of the helium cooling gas can be reduced by closing the second flow control valve.
    Type: Grant
    Filed: April 1, 1999
    Date of Patent: October 21, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co. Ltd.
    Inventors: R. Y. Yang, T. Y. Chen